I) Improving low photocurrent of pseudorotaxane based solar cell II) Synthesis and characterization of new Fe(0) cyclopentadienone complexes

Next to conventional solar panels that harvest direct sunlight, p-type dye-sensitized solar cells (DSSCs) have been developed, which are able to harvest diffuse sunlight. Due to unwanted charge recombination events p-type DSSCs exhibit low power conversion efficiencies (PCEs). Previous research has shown that dye-redox mediator (RM) interactions can prevent these recombination events, resulting in higher PCEs. It is unknown how the nature of dye-RM interactions affects the PCEs of pseudorotaxane-based solar cells. In this research this correlation is investigated by comparing one macrocycle, the 3-NDI, in combination with the three dyes that contains a recognition sites. 2D-DOSY-NMR experiments have been conducted to evaluate the diffusion constants (LogD) of the three couple. The research project has been stopped due to the coronavirus pandemic. The continuation of this thesis would have been to synthesize a dye on the basis of the data obtained from the diffusion tests and attempt the construction of a solar cell to then evaluate its effectiveness. During my training period I synthetized new Fe(0) cyclopentadienone compounds bearing a N-Heterocyclic Carbene ligand. The aim of the thesis was to achieve water solubility by modifications of the cyclopentadienone ligand. These new complexes have been modified using a sulfonation reaction, replacing an hydroxyl with a sulfate group, on the alkyl backbone of the cyclopentadienone ligand. All the complexes were characterized with IR, ESI-MS and NMR spectroscopy, and a new Fe(0) cyclopentadienone complex, involved as an intermediate, was obtained as a single crystal and was characterized also with X-Ray spectroscopy.

Electrical spectroscopy of rubrene bulk and thin film crystals

One of the most diffused electronic device is the field effect transistor (FET), contained in number of billions in each electronic device. Organic optoelectronics is an emerging field that exploits the unique properties of conjugated organic materials to develop new applications that require a combination of performance, low cost and processability. Organic single crystals are the material with best performances and purity among the variety of different form of organic semiconductors. This thesis is focused on electrical and optical characterization of Rubrene single crystal bulk and thin films. Rubrene bulk is well known but for the first time we studied thin films. The first Current-voltage characterization has been performed for the first time on three Rubrene thin films with three different thickness to extract the charge carriers mobility and to assess its crystalline structure. As results we see that mobility increase with thickness. Field effect transistor based on Rubrene thin films on $SiO_2$ have been characterize by current-voltage (I-V) analyses (at several temperatures) and reveals a hopping conduction. Hopping behavior probably is due to the lattice mismatch with the substrate or intrinsic defectivity of the thin films. To understand effects of contact resistance we tested thin films with the Transmission Line Method (TLM) method. The TLM method revealeds that contact resistance is negligible but evidenced a Schottky behavior in a limited but well determined range of T. To avoid this effect we carried out annealing treatment after the electrode evaporation iswe performed a compete I-V characterization as a function of in temperature to extract the electronic density of states (DOS) distribution through the Space Charge Limited Current (SCLC) method. The results show a DOS with an exponential trenddistribution, as expected. The measured mobility of thin films is about 0.1cm^2/Vs and it increases with the film thickness. Further studies are necessary to investigate the reason and improve performances. From photocurrent spectrum we calculated an Eg of about 2.2eV and both thin films and bulk have a good crystal order. Further measurement are necessary to solve some open problems

Defect states in MAPbBr3 by photo-induced current transient spectroscopy

In the past decade, perovskites have been under the spotlight as promising semicon- ductors with unique properties. Hybrid halide perovskites show excellent characteristic properties suitable for optoelectronic applications as tunable band gap, high absorption coefficient, large mobility and long carrier recombination lifetime. However, a complete understanding of environmental instability and the nature of defects in these materials is still lacking, hindering the development of perovskite-based technologies. In this work we studied MAPbBr3 single crystals, fabricated with Inverse Temperature Crystallization (ITC) technique, with Photo-Induced Current Transient Spectroscopy (PICTS). PICTS is a transient photocurrent measurement rarely employed for studying perovskites mate- rials, that allows for the defects characterization in high resistivity materials. We studied the samples under different conditions, such as negative and positive voltage biases, bias stress, different contact geometries and different illumination wavelengths, in order to study their effect on the material physical properties and to evaluate the trap activation energies and their behavior under different working conditions.

Spettroscopia di fotocorrente su perovskiti ibride in diverse condizioni ambientali

Le perovskiti ibride ad alogenuri costituiscono una classe di materiali con proprietà elettroniche e bassi costi di fabbricazione tali da renderle ottime candidate per applicazioni quali la produzione di celle solari, detector, LED e laser. L’impiego pratico delle perovskiti tuttavia è limitato: i dispositivi basati su questi materiali sono instabili a causa della spiccata reattività con l’ambiente esterno, come umidità e ossigeno. Nelle perovskiti inoltre la conduzione non è solo elettronica, ma anche ionica, caratteristica che contribuisce alla rapida degradazione dei materiali. In questa tesi si vuole studiare il contributo del trasporto ionico ed elettronico alla corrente nella perovskite MAPbBr3 (tribromuro di metilammonio piombo) e la reattività di tale materiale con l’ambiente. A tal proposito si usa la tecnica Intensity Modulated Photocurrent Spectroscopy (IMPS), che consiste nel misurare la fotocorrente prodotta da un dispositivo optoelettronico in funzione della frequenza di modulazione di una sorgente luminosa, quale LED o laser. Si ripetono le misure IMPS in aria, vuoto e argon, per studiare l’impatto dell’atmosfera sulla risposta del campione. Con un apposito software si esegue il fit dei dati sperimentali e si estrapolano i tempi caratteristici dei portatori di carica: si ottengono valori dell’ordine del μs per elettroni e lacune, del s per gli ioni mobili. Si confronta quindi il comportamento del campione nelle varie atmosfere. Si evince come in aria sia presente un maggior numero di specie ioniche che migrano nel materiale rispetto ad atmosfere controllate come il vuoto e l’argon. Tali specie sono associate a ioni mobili che si formano in seguito all’interazione del materiale con molecole di ossigeno e acqua presenti nell’ambiente.

Determination of local density of states in amorphous oxide semiconductors with Kelvin Probe Force Microscopy

Amorphous semiconductors are important materials as they can be deposited by physical deposition techniques on large areas and even on plastic substrates. Therefore, they are crucial for transistors in large active matrices for imaging and transparent wearable electronics. The most widely applied candidate for amorphous thin film transistors production is Indium Gallium Zinc Oxide (IGZO). It is attracting much interest because of its optical transparency, facile processing by sputtering deposition and notable improved charge carrier mobility with respect to hydrogenated amorphous silicon a-Si:H. Degradation of the device and long-term performance issues have been observed if IGZO thin film transistors are subjected to electrical stress, leading to a modification of IGZO channel properties and subthreshold slope. Therefore, it is of great interest to have a reliable and precise method to study the conduction band tail, and the density of states in amorphous semiconductors. The aim of this thesis is to develop a local technique using Kelvin Probe Force Microscopy to study the evolution of IGZO DOS properties. The work is divided into three main parts. First, solutions to the non-linear Poisson-Boltzmann equation of a metal-insulator-semiconductor junction describing the charge accumulation and its relation to DOS properties are elaborated. Second macroscopic techniques such as capacitance voltage (CV) measurements and photocurrent spectroscopy are applied to obtain a non-local estimate of band-tail DOS properties in thin film transistor samples. The third part of my my thesis is dedicated to the KPFM measurements. By fitting the data to the developed numerical model, important parameters describing the amorphous conduction band tail are obtained. The results are in excellent agreement with the macroscopic characterizations. KPFM result is comparable also with non-local optoelectronic characterizations, such as photocurrent spectroscopy.

Fabrication by magnetron sputtering and characterization of electrodes based on CuIn0.7Ga0.3Se2 (CIGS)

This thesis work aims to produce and test multilayer electrodes for their use as photocathode in a PEC device. The electrode developed is based on CIGS, a I-III-VI2 semiconductor material composed of copper (Cu), indium (In), Gallium (Ga) and selenium (Se). It has a bandgap in the range of 1.0-2.4 eV and an absorption coefficient of about 105cm−1, which makes it a promising photocathode for PEC water splitting. The idea of our multilayer electrode is to deposit a thin layer of CdS on top of CIGS to form a solid-state p–n junction and lead to more efficient charge separation. In addition another thin layer of AZO (Aluminum doped zinc oxide) is deposit on top of CdS since it would form a better alignment between the AZO/CdS/CIGS interfaces, which would help to drive the charge transport further and minimize charge recombination. Finally, a TiO2 layer on top of the electrodes is used as protective layer during the H2 evolution. FTO (Fluorine doped tin oxide) and Molybdenum are used as back-contact. We used the technique of RF magnetron sputtering to deposit the thin layers of material. The structural characterization performed by XDR measurement confirm a polycrystalline chalcopyrite structural with a preferential orientation along the (112) direction for the CIGS. From linear fit of the Tauc plot, we get an energy gap of about 1.16 eV. In addition, from a four points measurements, we get a resistivity of 0.26 Ωcm. We performed an electrochemical characterization in cell of our electrodes. The results show that our samples have a good stability but produce a photocurrent of the order of μA, three orders of magnitude smaller than our targets. The EIS analysis confirm a significant depletion of the species in front of the electrode causing a lower conversion of the species and less current flows.