In-situ detection of defect formation in organic flexible electronics by Kelvin Probe Force Microscopy

Organic semiconductor technology has attracted considerable research interest in view of its great promise for large area, lightweight, and flexible electronics applications. Owing to their advantages in processing and unique physical properties, organic semiconductors can bring exciting new opportunities for broad-impact applications requiring large area coverage, mechanical flexibility, low-temperature processing, and low cost. In order to achieve highly flexible device architecture it is crucial to understand on a microscopic scale how mechanical deformation affects the electrical performance of organic thin film devices. Towards this aim, I established in this thesis the experimental technique of Kelvin Probe Force Microscopy (KPFM) as a tool to investigate the morphology and the surface potential of organic semiconducting thin films under mechanical strain. KPFM has been employed to investigate the strain response of two different Organic Thin Film Transistor with active layer made by 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene), and Poly(3-hexylthiophene-2,5-diyl) (P3HT). The results show that this technique allows to investigate on a microscopic scale failure of flexible TFT with this kind of materials during bending. I find that the abrupt reduction of TIPS-pentacene device performance at critical bending radii is related to the formation of nano-cracks in the microcrystal morphology, easily identified due to the abrupt variation in surface potential caused by local increase in resistance. Numerical simulation of the bending mechanics of the transistor structure further identifies the mechanical strain exerted on the TIPS-pentacene micro-crystals as the fundamental origin of fracture. Instead for P3HT based transistors no significant reduction in electrical performance is observed during bending. This finding is attributed to the amorphous nature of the polymer giving rise to an elastic response without the occurrence of crack formation.

Cosmology from probe combination: synergies between the number counts of galaxy clusters and cosmic voids

This Thesis work concerns the complementary study of the abundance of galaxy clusters and cosmic voids identified in cosmological simulations, at different redshifts. In particular, we focus our analyses on the combination of the cosmological constraints derived from these probes, which can be considered statistically independent, given the different aspects of Universe density field they map. Indeed, we aim at showing the orthogonality of the derived cosmological constraints and the resulting impressive power of the combination of these probes. To perform this combination we apply three newly implemented algorithms that allow us to combine independent probes. These algorithms represent a flexible and user-friendly tool to perform different techniques for probe combination and are implemented within the environment provided by the large set of free software C++/Python CosmoBolognaLib. All the new implemented codes provide simple and flexible tools that will be soon applied to the data coming from currently available and next-generation wide-field surveys to perform powerful combined cosmological analyses.

Exploiting the clustering of cosmic voids as a novel cosmological probe

The investigations of the large-scale structure of our Universe provide us with extremely powerful tools to shed light on some of the open issues of the currently accepted Standard Cosmological Model. Until recently, constraining the cosmological parameters from cosmic voids was almost infeasible, because the amount of data in void catalogues was not enough to ensure statistically relevant samples. The increasingly wide and deep fields in present and upcoming surveys have made the cosmic voids become promising probes, despite the fact that we are not yet provided with a unique and generally accepted definition for them. In this Thesis we address the two-point statistics of cosmic voids, in the very first attempt to model its features with cosmological purposes. To this end, we implement an improved version of the void power spectrum presented by Chan et al. (2014). We have been able to build up an exceptionally robust method to tackle with the void clustering statistics, by proposing a functional form that is entirely based on first principles. We extract our data from a suite of high-resolution N-body simulations both in the LCDM and alternative modified gravity scenarios. To accurately compare the data to the theory, we calibrate the model by accounting for a free parameter in the void radius that enters the theory of void exclusion. We then constrain the cosmological parameters by means of a Bayesian analysis. As far as the modified gravity effects are limited, our model is a reliable method to constrain the main LCDM parameters. By contrast, it cannot be used to model the void clustering in the presence of stronger modification of gravity. In future works, we will further develop our analysis on the void clustering statistics, by testing our model on large and high-resolution simulations and on real data, also addressing the void clustering in the halo distribution. Finally, we also plan to combine these constraints with those of other cosmological probes.

Determination of local density of states in amorphous oxide semiconductors with Kelvin Probe Force Microscopy

Amorphous semiconductors are important materials as they can be deposited by physical deposition techniques on large areas and even on plastic substrates. Therefore, they are crucial for transistors in large active matrices for imaging and transparent wearable electronics. The most widely applied candidate for amorphous thin film transistors production is Indium Gallium Zinc Oxide (IGZO). It is attracting much interest because of its optical transparency, facile processing by sputtering deposition and notable improved charge carrier mobility with respect to hydrogenated amorphous silicon a-Si:H. Degradation of the device and long-term performance issues have been observed if IGZO thin film transistors are subjected to electrical stress, leading to a modification of IGZO channel properties and subthreshold slope. Therefore, it is of great interest to have a reliable and precise method to study the conduction band tail, and the density of states in amorphous semiconductors. The aim of this thesis is to develop a local technique using Kelvin Probe Force Microscopy to study the evolution of IGZO DOS properties. The work is divided into three main parts. First, solutions to the non-linear Poisson-Boltzmann equation of a metal-insulator-semiconductor junction describing the charge accumulation and its relation to DOS properties are elaborated. Second macroscopic techniques such as capacitance voltage (CV) measurements and photocurrent spectroscopy are applied to obtain a non-local estimate of band-tail DOS properties in thin film transistor samples. The third part of my my thesis is dedicated to the KPFM measurements. By fitting the data to the developed numerical model, important parameters describing the amorphous conduction band tail are obtained. The results are in excellent agreement with the macroscopic characterizations. KPFM result is comparable also with non-local optoelectronic characterizations, such as photocurrent spectroscopy.