Electrical spectroscopy of rubrene bulk and thin film crystals

One of the most diffused electronic device is the field effect transistor (FET), contained in number of billions in each electronic device. Organic optoelectronics is an emerging field that exploits the unique properties of conjugated organic materials to develop new applications that require a combination of performance, low cost and processability. Organic single crystals are the material with best performances and purity among the variety of different form of organic semiconductors. This thesis is focused on electrical and optical characterization of Rubrene single crystal bulk and thin films. Rubrene bulk is well known but for the first time we studied thin films. The first Current-voltage characterization has been performed for the first time on three Rubrene thin films with three different thickness to extract the charge carriers mobility and to assess its crystalline structure. As results we see that mobility increase with thickness. Field effect transistor based on Rubrene thin films on $SiO_2$ have been characterize by current-voltage (I-V) analyses (at several temperatures) and reveals a hopping conduction. Hopping behavior probably is due to the lattice mismatch with the substrate or intrinsic defectivity of the thin films. To understand effects of contact resistance we tested thin films with the Transmission Line Method (TLM) method. The TLM method revealeds that contact resistance is negligible but evidenced a Schottky behavior in a limited but well determined range of T. To avoid this effect we carried out annealing treatment after the electrode evaporation iswe performed a compete I-V characterization as a function of in temperature to extract the electronic density of states (DOS) distribution through the Space Charge Limited Current (SCLC) method. The results show a DOS with an exponential trenddistribution, as expected. The measured mobility of thin films is about 0.1cm^2/Vs and it increases with the film thickness. Further studies are necessary to investigate the reason and improve performances. From photocurrent spectrum we calculated an Eg of about 2.2eV and both thin films and bulk have a good crystal order. Further measurement are necessary to solve some open problems

An optical sensor for online hematocrit measurement: characterization and fitting algorithm development

Lo scopo del presente lavoro di tesi riguarda la caratterizzazione di un sensore ottico per la lettura di ematocrito e lo sviluppo dell’algoritmo di calibrazione del dispositivo. In altre parole, utilizzando dati ottenuti da una sessione di calibrazione opportunamente pianificata, l’algoritmo sviluppato ha lo scopo di restituire la curva di interpolazione dei dati che caratterizza il trasduttore. I passi principali del lavoro di tesi svolto sono sintetizzati nei punti seguenti: 1) Pianificazione della sessione di calibrazione necessaria per la raccolta dati e conseguente costruzione di un modello black box.  Output: dato proveniente dal sensore ottico (lettura espressa in mV)  Input: valore di ematocrito espresso in punti percentuali ( questa grandezza rappresenta il valore vero di volume ematico ed è stata ottenuta con un dispositivo di centrifugazione sanguigna) 2) Sviluppo dell’algoritmo L’algoritmo sviluppato e utilizzato offline ha lo scopo di restituire la curva di regressione dei dati. Macroscopicamente, il codice possiamo distinguerlo in due parti principali: 1- Acquisizione dei dati provenienti da sensore e stato di funzionamento della pompa bifasica 2- Normalizzazione dei dati ottenuti rispetto al valore di riferimento del sensore e implementazione dell’algoritmo di regressione. Lo step di normalizzazione dei dati è uno strumento statistico fondamentale per poter mettere a confronto grandezze non uniformi tra loro. Studi presenti, dimostrano inoltre un mutazione morfologica del globulo rosso in risposta a sollecitazioni meccaniche. Un ulteriore aspetto trattato nel presente lavoro, riguarda la velocità del flusso sanguigno determinato dalla pompa e come tale grandezza sia in grado di influenzare la lettura di ematocrito.

Characterization of integrated Bragg gratings in silicon-on-insulator

Silicon-on-insulator (SOI) is rapidly emerging as a very promising material platform for integrated photonics. As it combines the potential for optoelectronic integration with the low-cost and large volume manufacturing capabilities and they are already accumulate a huge amount of applications in areas like sensing, quantum optics, optical telecommunications and metrology. One of the main limitations of current technology is that waveguide propagation losses are still much higher than in standard glass-based platform because of many reasons such as bends, surface roughness and the very strong optical confinement provided by SOI. Such high loss prevents the fabrication of efficient optical resonators and complex devices severely limiting the current potential of the SOI platform. The project in the first part deals with the simple waveguides loss problem and trying to link that with the polarization problem and the loss based on Fabry-Perot Technique. The second part of the thesis deals with the Bragg Grating characterization from again the point of view of the polarization effect which leads to a better stop-band use filters. To a better comprehension a brief review on the basics of the SOI and the integrated Bragg grating ends up with the fabrication techniques and some of its applications will be presented in both parts, until the end of both the third and the fourth chapters to some results which hopefully make its precedent explanations easier to deal with.