Fabrication of high-k dielectric thin films for spintronics

Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del carattere epitassiale od amorfo dell'STO. I risultati più promettenti sono stati ottenuti con STO amorfo. Sono stati costruiti diversi set di condensatori nella configurazione Metallo/Isolante/Semiconduttore (MIS), con M=Au, I=STO o NGO ed S=Nb:STO, allo scopo di indagare la dipendenza delle proprietà dielettriche ed isolanti dai parametri di crescita. In particolare ci si è concentrati sulla temperatura di deposizione e, nel caso dei film di STO, anche sulla dipendenza della costante dielettrica dallo spessore del film. Come ci si aspettava, la costante dielettrica relativa dei film di STO (65 per un film spesso 40 nm e 175 per uno di 170 nm) si è rivelata maggiore di quella dei film di NGO per i quali abbiamo ottenuto un valore di 20, che coincide con il valore del bulk. Nonostante l'elevata capacità per unità di area ottenibile con l'STO, la costante dielettrica di questo materiale risulta fortemente dipendente dallo spessore del film. Un ulteriore aspetto critico relativo all'STO è dato dal livello di ossidazione del film: le vacanze di ossigeno, infatti, possono ridurre la resistività dell'STO (nominalmente molto elevata), ed aumentarne la corrente di perdita. Al contrario l'NGO è meno sensibile ai processi tecnologici e, allo stesso tempo, ha un valore di costante dielettrica più alto rispetto ad un tipico dielettrico come l'ossido di silicio.

Study of high-quality ALD gate dielectrics in radiation sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields, where the exposure of ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Radiotherapy and radioprotection are two examples in which fast and reliable detectors are needed. Compact and large area wearable detectors are being developed to address real-life radiation dosimetry applications, their ideal properties include flexibility, lightness, and low-cost. This thesis contributed to the development of Radiation sensitive OXide Field Effect Transistors (ROXFETs), which are detectors able to provide fast and real-time radiation read out. ROXFETs are based on thin film transistors fabricated with high-mobility amorphous oxide semiconductor, making them compatible with large area, flexible, and low cost production over plastic substrates. The gate dielectric material has high dielectric constant and high atomic number, which results in high performances and high radiation sensitivity, respectively. The aim of this work was to establish a stable and reliable fabrication process for ROXFETs made with atomic layer deposited gate dielectric. A study on the effect of gate dielectric materials was performed, focusing the attention on the properties of the dielectric-semiconductor interface. Single and multi layer dielectric structures were compared during this work. Furthermore, the effect of annealing temperature was studied. The device performances were tested to understand the underlying physical processes. In this way, it was possible to determine a reliable fabrication procedure and an optimal structure for ROXFETs. An outstanding sensitivity of (65±3)V/Gy was measured in detectors with a bi-layer Ta₂O₅-Al₂O₃ gate dielectric with low temperature annealing performed at 180°C.

Search for time-integrated cp violation in $d^0 \rightarrow k^+k^-$ and $d^0 \rightarrow \pi^+\pi^-$ decays at lhcb.

The LHCb experiment at the LHC, by exploiting the high production cross section for $c\overline{c}$ quark pairs, offers the possibility to investigate $\mathcal{CP}$ violation in the charm sector with a very high precision.\\ In this thesis a measurement of time-integrated \(\mathcal{CP}\) violation using $D^0\rightarrow~K^+K^-$ and $D^0\rightarrow \pi^+\pi^-$ decays at LHCb is presented. The measured quantity is the difference ($\Delta$) of \(\mathcal{CP}\) asymmetry ($\mathcal{A}_{\mathcal{CP}}$) between the decay rates of $D^0$ and $\overline{D}^0$ mesons into $K^+K^–$ and $\pi^+\pi^-$ pairs.\\ The analysis is performed on 2011 data, collected at \(\sqrt{s}=7\) TeV and corresponding to an integrated luminosity of 1 fb\(^{-1}\), and 2012 data, collected at \(\sqrt{s}=8\) TeV and corresponding to an integrated luminosity of 2 fb\(^{-1}\).\\ A complete study of systematic uncertainties is beyond the aim of this thesis. However the most important systematic of the previous analysis has been studied. We find that this systematic uncertainty was due to a statistical fluctuation and then we demonstrate that it is no longer necessary to take into account.\\ By combining the 2011 and 2012 results, the final statistical precision is 0.08\%. When this analysis will be completed and published, this will be the most precise single measurement in the search for $\mathcal{CP}$ violation in the charm sector.

Galactic fountain flows in high-resolution hydrodynamical simulations of galaxy disks

Feedback from the most massive components of a young stellar cluster deeply affects the surrounding ISM driving an expanding over-pressured hot gas cavity in it. In spiral galaxies these structures may have sufficient energy to break the disk and eject large amount of material into the halo. The cycling of this gas, which eventually will fall back onto the disk, is known as galactic fountains. We aim at better understanding the dynamics of such fountain flow in a Galactic context, frame the problem in a more dynamic environment possibly learning about its connection and regulation to the local driving mechanism and understand its role as a metal diffusion channel. The interaction of the fountain with a hot corona is hereby analyzed, trying to understand the properties and evolution of the extraplanar material. We perform high resolution hydrodynamical simulations with the moving-mesh code AREPO to model the multi-phase ISM of a Milky Way type galaxy. A non-equilibrium chemical network is included to self consistently follow the evolution of the main coolants of the ISM. Spiral arm perturbations in the potential are considered so that large molecular gas structures are able to dynamically form here, self shielded from the interstellar radiation field. We model the effect of SN feedback from a new-born stellar cluster inside such a giant molecular cloud, as the driving force of the fountain. Passive Lagrangian tracer particles are used in conjunction to the SN energy deposition to model and study diffusion of freshly synthesized metals. We find that both interactions with hot coronal gas and local ISM properties and motions are equally important in shaping the fountain. We notice a bimodal morphology where most of the ejected gas is in a cold $10^4$ K clumpy state while the majority of the affected volume is occupied by a hot diffuse medium. While only about 20\% of the produced metals stay local, most of them quickly diffuse through this hot regime to great scales.