Novel transparent and flexible transistors for radiation harsh environment

La scoperta dei semiconduttori amorfi ha segnato l’era della microelettronica su larga scala rendendo possibile il loro impiego nelle celle solari o nei display a matrice attiva. Infatti, mentre i semiconduttori a cristalli singoli non sono consoni a questo tipo di applicazioni e i s. policristallini presentano il problema dei bordi di grano, i film amorfi possono essere creati su larga scala (>1 m^2) a basse temperature (ad es. <400 °C) ottenendo performance soddisfacenti sia su substrati rigidi che flessibili. Di recente la ricerca sta compiendo un grande sforzo per estendere l’utilizzo di questa nuova elettronica flessibile e su larga scala ad ambienti soggetti a radiazioni ionizzanti, come lo sono i detector di radiazioni o l’elettronica usata in applicazioni spaziali (satelliti). A questa ricerca volge anche la mia tesi, che si confronta con la fabbricazione e la caratterizzazione di transistor a film sottili basati su ossidi semiconduttori ad alta mobilità e lo studio della loro resistenza ai raggi X. La micro-fabbricazione, ottimizzazione e caratterizzazione dei dispositivi è stata realizzata nei laboratori CENIMAT e CEMOP dell’Università Nova di Lisbona durante quattro mesi di permanenza. Tutti i dispositivi sono stati creati con un canale n di ossido di Indio-Gallio-Zinco (IGZO). Durante questo periodo è stato realizzato un dispositivo dalle ottime performance e con interessanti caratteristiche, una delle quali è la non variazione del comportamento capacitivo in funzione della frequenza e la formidabile resistenza alle radiazioni. Questo dispositivo presenta 114 nm di dielettrico, realizzato con sette strati alternati di SiO2/ Ta2O5. L’attività di ricerca svolta al Dipartimento di Fisica e Astronomia di Bologna riguarda prevalentemente lo studio degli effetti delle radiazioni ionizzanti su TFTs. Gli esperimenti hanno rivelato che i dispositivi godono di una buona stabilità anche se soggetti alle radiazioni. Infatti hanno mostrato performance pressoché inalterate anche dopo un’esposizione a 1 kGy di dose cumulativa di raggi X mantenendo circa costanti parametri fondamentali come la mobilità, il threshold voltage e la sub-threshold slope. Inoltre gli effetti dei raggi X sui dispositivi, così come parametri fondamentali quali la mobilità, si sono rivelati essere notevolmente influenzati dallo spessore del dielettrico.

Thermally reduced Graphene Oxide: a well promising way to transparent flexible electrodes.

L'elaborato tratta dell'ottimizzazione del processo di riduzione termica dell'ossido di grafene in termini di conduttività e trasmittanza ottica. Definiti gli standard di deposizione tramite spin-coating e riduzione termica, i film prodotti vengono caratterizzati tramite XPS, AFM, UPS, TGA, ne vengono testate la conducibilità, con e senza effetto di gate, e la trasmittanza ottica, ne si misura l'elasticità tramite spettroscopia di forza, tutto al fine di comprendere l'evoluzione del processo termico di riduzione e di individuare i parametri migliori al fine di progredire verso la produzione di elettrodi flessibili e trasparenti a base di grafen ossido ridotto.

In-situ detection of defect formation in organic flexible electronics by Kelvin Probe Force Microscopy

Organic semiconductor technology has attracted considerable research interest in view of its great promise for large area, lightweight, and flexible electronics applications. Owing to their advantages in processing and unique physical properties, organic semiconductors can bring exciting new opportunities for broad-impact applications requiring large area coverage, mechanical flexibility, low-temperature processing, and low cost. In order to achieve highly flexible device architecture it is crucial to understand on a microscopic scale how mechanical deformation affects the electrical performance of organic thin film devices. Towards this aim, I established in this thesis the experimental technique of Kelvin Probe Force Microscopy (KPFM) as a tool to investigate the morphology and the surface potential of organic semiconducting thin films under mechanical strain. KPFM has been employed to investigate the strain response of two different Organic Thin Film Transistor with active layer made by 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene), and Poly(3-hexylthiophene-2,5-diyl) (P3HT). The results show that this technique allows to investigate on a microscopic scale failure of flexible TFT with this kind of materials during bending. I find that the abrupt reduction of TIPS-pentacene device performance at critical bending radii is related to the formation of nano-cracks in the microcrystal morphology, easily identified due to the abrupt variation in surface potential caused by local increase in resistance. Numerical simulation of the bending mechanics of the transistor structure further identifies the mechanical strain exerted on the TIPS-pentacene micro-crystals as the fundamental origin of fracture. Instead for P3HT based transistors no significant reduction in electrical performance is observed during bending. This finding is attributed to the amorphous nature of the polymer giving rise to an elastic response without the occurrence of crack formation.

Excited state energy surfaces of flexible emitters for thermally activated delayed fluorescence

Organic Light-Emitting Diodes (OLEDs) technology has matured over recent years, reaching the commercialization level and being used in various applications. The required efficiency can be achieved by transforming triplet excitons into singlet states via Reverse InterSystem Crossing (RISC), which a general mechanism called thermally activated delayed fluorescence (TADF). Two prototypical molecules in the field, 2CzBN and 4CzBN, Carbazole Benzonitrile (donor-acceptor) derivatives, possess similar energy gap between singlet and triplet (∆EST, a key parameter in the RISC rate), but different TADF performance. In this sense, other parameter must be considered to explain these different behaviors. In this work, we theoretically investigate 2CzBN and 4CzBN and address the problem of how flexible donor-acceptor (D-A) or donor-acceptor-donor (D-A-D) molecular architectures affect the nature of excited state, and the oscillator strength. Furthermore, we analyze the RISC rates as a function of the conformation of the carbazole side groups, considering the S0, S1, T1 and T2 states. The oscillator strength of 4CzBN is higher than of 2CzBN, which, in turn, is almost vanishing, resulting in only 4CzBN being a TADF active molecule. We also note the presence of a second triplet state T2 lower in energy than S1, and that the reorganization energies, associated to the RISC processes involving T1 and T2, are both important factor in differentiating the rates in 2CzBN and 4CzBN. However, the 4CzBN RISC rate from T2 to S1 is surprisingly high with respect to the one from T1 to S1, although, according to EL-Sayed rules, since T2 (CT/LE) is more similar to S1 (CT) than in 2CzBN (LE, CT), this transition should be less favored. These insights are important to understand the photophysics of the TADF process and to design novel TADF emitters based on the benzo-carbazole architecture.

Characterization of a 3D-printed low-cost flexible dielectric material for the realization of innovative WPT wearable applications

The aim of this thesis is to demonstrate that 3D-printing technologies can be considered significantly attractive in the production of microwave devices and in the antenna design, with the intention of making them lightweight, cheaper, and easily integrable for the production of wireless, battery-free, and wearable devices for vital signals monitoring. In this work, a new 3D-printable, low-cost resin material, the Flexible80A, is proposed as RF substrate in the implementation of a rectifying antenna (rectenna) operating at 2.45 GHz for wireless power transfer. A careful and accurate electromagnetic characterization of the abovementioned material, revealing it to be a very lossy substrate, has paved the way for the investigation of innovative transmission line and antenna layouts, as well as etching techniques, possible thanks to the design freedom enabled by 3D-printing technologies with the aim of improving the wave propagation performance within lossy materials. This analysis is crucial in the design process of a patch antenna, meant to be successively connected to the rectifier. In fact, many different patch antenna layouts are explored varying the antenna dimensions, the substrate etchings shape and position, the feeding line technology, and the operating frequency. Before dealing with the rectification stage of the rectenna design, the hot and long-discussed topic of the equivalent receiving antenna circuit representation is addressed, providing an overview of the interpretation of different authors about the issue, and the position that has been adopted in this thesis. Furthermore, two rectenna designs are proposed and simulated with the aim of minimizing the dielectric losses. Finally, a prototype of a rectenna with the antenna conjugate matched to the rectifier, operating at 2.45 GHz, has been fabricated with adhesive copper on a substrate sample of Flexible80A and measured, in order to validate the simulated results.

Fractional Order Modeling and Control of a Flexible Satellite

Researchers have engrossed fractional-order modeling because of its ability to capture phenomena that are nearly impossible to describe owing to its long-term memory and inherited properties. Motivated by the research in fractional modeling, a fractional-order prototype for a flexible satellite whose dynamics are governed by fractional differential equations is proposed for the first time. These relations are derived using fractional attitude dynamic description of rigid body simultaneously coupled with the fractional Lagrange equation that governs the vibration of the appendages. Two attitude controls are designed in the presence of the faults and uncertainties of the system. The first is the fractional-order feedback linearization controller, in which the stability of the internal dynamics of the system is proved. The second is the fractional-order sliding mode control, whose asymptotic stability is demonstrated using the quadratic Lyapunov function. Several nonlinear simulations are implemented to analyze the performance of the proposed controllers.