Study of high-quality ALD gate dielectrics in radiation sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields, where the exposure of ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Radiotherapy and radioprotection are two examples in which fast and reliable detectors are needed. Compact and large area wearable detectors are being developed to address real-life radiation dosimetry applications, their ideal properties include flexibility, lightness, and low-cost. This thesis contributed to the development of Radiation sensitive OXide Field Effect Transistors (ROXFETs), which are detectors able to provide fast and real-time radiation read out. ROXFETs are based on thin film transistors fabricated with high-mobility amorphous oxide semiconductor, making them compatible with large area, flexible, and low cost production over plastic substrates. The gate dielectric material has high dielectric constant and high atomic number, which results in high performances and high radiation sensitivity, respectively. The aim of this work was to establish a stable and reliable fabrication process for ROXFETs made with atomic layer deposited gate dielectric. A study on the effect of gate dielectric materials was performed, focusing the attention on the properties of the dielectric-semiconductor interface. Single and multi layer dielectric structures were compared during this work. Furthermore, the effect of annealing temperature was studied. The device performances were tested to understand the underlying physical processes. In this way, it was possible to determine a reliable fabrication procedure and an optimal structure for ROXFETs. An outstanding sensitivity of (65±3)V/Gy was measured in detectors with a bi-layer Ta₂O₅-Al₂O₃ gate dielectric with low temperature annealing performed at 180°C.

Numerical investigation of turbulent/non-turbulent interface

The subject of this work is the diffusion of turbulence in a non-turbulent flow. Such phenomenon can be found in almost every practical case of turbulent flow: all types of shear flows (wakes, jet, boundary layers) present some boundary between turbulence and the non-turbulent surround; all transients from a laminar flow to turbulence must account for turbulent diffusion; mixing of flows often involve the injection of a turbulent solution in a non-turbulent fluid. The mechanism of what Phillips defined as “the erosion by turbulence of the underlying non-turbulent flow”, is called entrainment. It is usually considered to operate on two scales with different mechanics. The small scale nibbling, which is the entrainment of fluid by viscous diffusion of turbulence, and the large scale engulfment, which entraps large volume of flow to be “digested” subsequently by viscous diffusion. The exact role of each of them in the overall entrainment rate is still not well understood, as it is the interplay between these two mechanics of diffusion. It is anyway accepted that the entrainment rate scales with large properties of the flow, while is not understood how the large scale inertial behavior can affect an intrinsically viscous phenomenon as diffusion of vorticity. In the present work we will address then the problem of turbulent diffusion through pseudo-spectral DNS simulations of the interface between a volume of decaying turbulence and quiescent flow. Such simulations will give us first hand measures of velocity, vorticity and strains fields at the interface; moreover the framework of unforced decaying turbulence will permit to study both spatial and temporal evolution of such fields. The analysis will evidence that for this kind of flows the overall production of enstrophy , i.e. the square of vorticity omega^2 , is dominated near the interface by the local inertial transport of “fresh vorticity” coming from the turbulent flow. Viscous diffusion instead plays a major role in enstrophy production in the outbound of the interface, where the nibbling process is dominant. The data from our simulation seems to confirm the theory of an inertially stirred viscous phenomenon proposed by others authors before and provides new data about the inertial diffusion of turbulence across the interface.

Numerical simulation of interdigitated back contact hetero-junction solar cells

The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

Polymer-liquid crystal interface: a molecular dynamics study

Liquid crystals (LCs) are an interesting class of soft condensed matter systems characterized by an unusual combination of fluidity and long-range order, mainly known for their applications in displays (LCDs). However, the interest in LC continues to grow pushed by their application in new technologies in medicine, optical imaging, micro and nano technologies etc. In LCDs uniaxial alignment of LCs is mainly achieved by a rubbing process. During this treatment, the surfaces of polymer coated display substrates are rubbed in one direction by a rotating cylinder covered with a rubbing cloth. Basically, LC alignment involves two possible aligning directions: uniaxial planar (homogeneous) and vertical (homeotropic) to the display substrate. An interesting unresolved question concerning LCs regards the origin of their alignment on rubbed surfaces, and in particular on the polymeric ones used in the display industry. Most studies have shown that LCs on the surface of the rubbed polymer film layer are lying parallel to the rubbing direction. In these systems, micrometric grooves are generated on the film surface along the rubbing direction and also the polymer chains are stretched in this direction. Both the parallel aligned microgrooves and the polymer chains at the film surface may play a role in the LC alignment and it is not easy to quantify the effect of each contribution. The work described in this thesis is an attempt to find new microscopic evidences on the origin of LC alignment on polymeric surfaces through molecular dynamics (MD) simulations, which allow the investigation of the phenomenon with atomic detail. The importance of the arrangement of the polymeric chains in LCs alignment was studied by performing MD simulations of a thin film of a typical nematic LC, 4-cyano-4’-pentylbiphenyl (5CB), in contact with two different polymers: poly(methyl methacrylate)(PMMA) and polystyrene (PS). At least four factors are believed to influence the LC alignment: 1. the interactions of LCs with the backbone vinyl chains; 2. the interactions of LCs with the oriented side groups; 3. the anisotropic interactions of LCs with nanometric grooves; 4. the presence of static surface charges. Here we exclude the effect of microgrooves and of static surface charges from our virtual experiment, by using flat and neutral polymer surfaces, with the aim of isolating the chemical driving factors influencing the alignment of LC phases on polymeric surfaces.

Kinect e openNI a supporto delle NUI (Natural User Interface) applications.

Descrizione delle Natural User Interface e del framework OpenNI 2.0 compreso di caso applicativo.

Finite element modeling of the cement-bone interface beneath the tibial tray of a total knee arthroplasty: Study of the stress shielding effect (modellazione agli elementi finiti dell'interfaccia cemento-osso sotto il piatto tibiale di protesi totale di ginocchio: Analisi dello stress shielding)

The goal of this thesis was the study of the cement-bone interface in the tibial component of a cemented total knee prosthesis. One of the things you can see in specimens after in vivo service is that resorption of bone occurs in the interdigitated region between bone and cement. A stress shielding effect was investigated as a cause to explain bone resorption. Stress shielding occurs when bone is loaded less than physiological and therefore it starts remodeling according to the new loading conditions. µCT images were used to obtain 3D models of the bone and cement structure and a Finite Element Analysis was used to simulate different kind of loads. Resorption was also simulated by performing erosion operations in the interdigitated bone region. Finally, 4 models were simulated: bone (trabecular), bone with cement, and two models of bone with cement after progressive erosions of the bone. Compression, tension and shear test were simulated for each model in displacement-control until 2% of strain. The results show how the principal strain and Von Mises stress decrease after adding the cement on the structure and after the erosion operations. These results show that a stress shielding effect does occur and rises after resorption starts.

Analisi delle caratteristiche di dispositivi per il brain computer interface

La brain computer interface sono state create per sopperire ai problemi motori e di linguistica nei pazienti che, a causa di malattie neurodegenerative o in seguito a traumi, sono paralizzate o non riescono a parlare. Vengono prese in questione le caratteristiche di un sistema per le BCI analizzando ogni blocco funzionale del sistema. Si fa visione delle applicazioni tra le quali la possibilità di far muovere un arto bionico a una donna tetraplegica e la possibilità di far scrivere una parola su uno schermo a un paziente non in grado di comunicare verbalmente. Si mettono in luce i problemi annessi a questo campo e i possibili sviluppi.

Utilizzo dell'elettroencefalografia per la brain-computer interface

Con Brain-Computer Interface si intende un collegamento diretto tra cervello e macchina, che essa sia un computer o un qualsiasi dispositivo esterno, senza l’utilizzo di muscoli. Grazie a sensori applicati alla cute del cranio i segnali cerebrali del paziente vengono rilevati, elaborati, classificati (per mezzo di un calcolatore) e infine inviati come output a un device esterno. Grazie all'utilizzo delle BCI, persone con gravi disabilità motorie o comunicative (per esempio malati di SLA o persone colpite dalla sindrome del chiavistello) hanno la possibilità di migliorare la propria qualità di vita. L'obiettivo di questa tesi è quello di fornire una panoramica nell'ambito dell'interfaccia cervello-computer, mostrando le tipologie esistenti, cercando di farne un'analisi critica sui pro e i contro di ogni applicazione, ponendo maggior attenzione sull'uso dell’elettroencefalografia come strumento per l’acquisizione dei segnali in ingresso all'interfaccia.

Looking for silicene: studies of silicon deposition on metallic and semiconductor substrates

Nel presente lavoro espongo i risultati degli esperimenti svolti durante la mia internship all’Institut des NanoSciences de Paris (INSP), presso l’Università Pierre et Marie Curie (Paris VI), nel team "Phisico-Chimie et Dynamique des Surfaces", sotto la supervisione del Dott. Geoffroy Prévot. L’elaborato è stato redatto e in- tegrato sotto la guida del Dott. Pasquini, del dipartimento di Fisica e Astronomia dell’Università di Bologna. La tesi s’inserisce nel campo di ricerca del silicene, i.e. l’allotropo bidimensionale del silicio. Il cosidetto free-standing silicene è stato predetto teoricamente nel 2009 utilizzando calcoli di Density Functional Theory, e da allora ha stimolato un’intensa ricerca per la sua realizzazione sperimentale. La sua struttura elettronica lo rende particolarmente adatto per eventuali appli- cazioni tecnologiche e sperimentali, mentre lo studio delle sue proprietà è di grande interesse per la scienza di base. Nel capitolo 1 presento innanzitutto la struttura del silicene e le proprietà previste dagli studi pubblicati nella letteratura scientifica. In seguito espongo alcuni dei risultati sperimentali ottenuti negli ultimi anni, in quanto utili per un paragone con i risultati ottenuti durante l’internship. Nel capitolo 2 presento le tecniche sperimentali che ho utilizzato per effettuare le misure. Molto tempo è stato investito per ottenere una certa dimistichezza con gli apparati in modo da svolgere gli esperimenti in maniera autonoma. Il capitolo 3 è dedicato alla discussione e analisi dei risultati delle misure, che sono presentati in relazione ad alcune considerazioni esposte nel primo capitolo. Infine le conclusioni riassumono brevemente quanto ottenuto dall’analisi dati. A partire da queste considerazioni propongo alcuni esperimenti che potrebbero ulteriormente contribuire alla ricerca del silicene. I risultati ottenuti su Ag(111) sono contenuti in un articolo accettato da Physical Review B.

Sistemi Brain Computer Interface: dalla macchina al paziente

C’è un crescente interesse nella comunità scientifica per l’applicazione delle tecniche della bioingegneria nel campo delle interfacce fra cervello e computer. Questo interesse nasce dal fatto che in Europa ci sono almeno 300.000 persone con paralisi agli arti inferiori, con una età media piuttosto bassa (31 anni), registrandosi circa 5.000 nuovi casi ogni anno, in maggioranza dovuti ad incidenti automobilistici. Tali lesioni traumatiche spinali inducono delle disfunzioni sensoriali a causa dell’interruzione tra gli arti e i centri sopraspinali. Per far fronte a questi problemi gli scienziati si sono sempre più proiettati verso un nuovo settore: il Brain Computer Interaction, ossia un ambito della ricerca volto alla costruzione di interfacce in grado di collegare direttamente il cervello umano ad un dispositivo elettrico come un computer.

Evoluzione delle user interface: dalla metafora del desktop al Wearable Computing

Negli ultimi decenni abbiamo assistito ad una graduale evoluzione delle interfacce utente e della tecnologia. Sono stati introdotti nuovi dispositivi mobile e wearable che negli ultimi anni hanno subito un incremento tecnologico esponenziale arrivando a fondersi con la vita di tutti i giorni. Le classiche interfacce grafiche WIMP, la metafora del desktop e le linee guida di progettazione fino ad ora sviluppate non risultano ideali per la nuova tecnologia di wearable computing. Il proposito che la tesi vuole andare ad affrontare è proprio quello di indagare lo sviluppo di nuove user inteface basate sulla tecnologia wearable ed in particolare per smart glasses.