Ottimizzazione di protocolli di trasmissione dati tramite interfaccia usb implementati su fpga

La maggior parte dei moderni dispositivi e macchinari, sia ad uso civile che industriale, utilizzano sistemi elettronici che ne supervisionano e ne controllano il funzionamento. All’ interno di questi apparati è quasi certamente impiegato un sistema di controllo digitale che svolge, anche grazie alle potenzialità oggi raggiunte, compiti che fino a non troppi anni or sono erano dominio dell’ elettronica analogica, si pensi ad esempio ai DSP (Digital Signal Processor) oggi impiegati nei sistemi di telecomunicazione. Nonostante l'elevata potenza di calcolo raggiunta dagli odierni microprocessori/microcontrollori/DSP dedicati alle applicazioni embedded, quando è necessario eseguire elaborazioni complesse, time-critical, dovendo razionalizzare e ottimizzare le risorse a disposizione, come ad esempio spazio consumo e costi, la scelta ricade inevitabilmente sui dispositivi FPGA. I dispositivi FPGA, acronimo di Field Programmable Gate Array, sono circuiti integrati a larga scala d’integrazione (VLSI, Very Large Scale of Integration) che possono essere configurati via software dopo la produzione. Si differenziano dai microprocessori poiché essi non eseguono un software, scritto ad esempio in linguaggio assembly oppure in linguaggio C. Sono invece dotati di risorse hardware generiche e configurabili (denominate Configurable Logic Block oppure Logic Array Block, a seconda del produttore del dispositivo) che per mezzo di un opportuno linguaggio, detto di descrizione hardware (HDL, Hardware Description Language) vengono interconnesse in modo da costituire circuiti logici digitali. In questo modo, è possibile far assumere a questi dispositivi funzionalità logiche qualsiasi, non previste in origine dal progettista del circuito integrato ma realizzabili grazie alle strutture programmabili in esso presenti.

Analysis, Design, and Hardware-in-the-Loop Validation of Multi-Active Bridge Converters

This master's thesis investigates different aspects of Dual-Active-Bridge (DAB) Converter and extends aspects further to Multi-Active-Bridges (MAB). The thesis starts with an overview of the applications of the DAB and MAB and their importance. The analytical part of the thesis includes the derivation of the peak and RMS currents, which is required for finding the losses present in the system. The power converters, considered in this thesis are DAB, Triple-Active Bridge (TAB) and Quad-Active Bridge (QAB). All the theoretical calculations are compared with the simulation results from PLECS software for identifying the correctness of the reviewed and developed theory. The Hardware-in-the-Loop (HIL) simulation is conducted for checking the control operation in real-time with the help of the RT box from the Plexim. Additionally, as in real systems digital signal processor (DSP), system-on-chip or field programmable gate array is employed for the control of the power electronic systems, and the execution of the control in the real-time simulation (RTS) conducted is performed by DSP.

Study of high-quality ALD gate dielectrics in radiation sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields, where the exposure of ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Radiotherapy and radioprotection are two examples in which fast and reliable detectors are needed. Compact and large area wearable detectors are being developed to address real-life radiation dosimetry applications, their ideal properties include flexibility, lightness, and low-cost. This thesis contributed to the development of Radiation sensitive OXide Field Effect Transistors (ROXFETs), which are detectors able to provide fast and real-time radiation read out. ROXFETs are based on thin film transistors fabricated with high-mobility amorphous oxide semiconductor, making them compatible with large area, flexible, and low cost production over plastic substrates. The gate dielectric material has high dielectric constant and high atomic number, which results in high performances and high radiation sensitivity, respectively. The aim of this work was to establish a stable and reliable fabrication process for ROXFETs made with atomic layer deposited gate dielectric. A study on the effect of gate dielectric materials was performed, focusing the attention on the properties of the dielectric-semiconductor interface. Single and multi layer dielectric structures were compared during this work. Furthermore, the effect of annealing temperature was studied. The device performances were tested to understand the underlying physical processes. In this way, it was possible to determine a reliable fabrication procedure and an optimal structure for ROXFETs. An outstanding sensitivity of (65±3)V/Gy was measured in detectors with a bi-layer Ta₂O₅-Al₂O₃ gate dielectric with low temperature annealing performed at 180°C.