Extraction of antioxidants from corn by-products for applications in bio-based polymer matrices

The objective of this dissertation is the evaluation of the exploitability of corn cobs as natural additives for bio-based polymer matrices, in order to hone their properties while keeping the fundamental quality of being fully bio-derived. The first part of the project has the purpose of finding the best solvent and conditions to extract antioxidants and anti-degrading molecules from corn cobs, exploiting room and high-temperature processes, traditional and advanced extraction methods, as well as polar and nonpolar solvents. The extracts in their entirety are then analysed to evaluate their antioxidant content, in order to select the conditions able to maximise their anti-degrading properties. The second part of the project, instead, focuses on assessing chemical and physical properties of the best-behaving extract when inserted in a polymeric matrix. To achieve this, low-density polyethylene (LDPE) and poly (butylene succinate – co – adipate) (PBSA) are employed. These samples are obtained through extrusion and are subsequently characterised exploiting the DSC equipment and a sinusoidally oscillating rheometer. In addition, extruded polymeric matrices are subjected to thermal and photo ageing, in order to identify their behaviour after different forms of degradation and to assess their performances with respect to synthetically produced anti-degrading additives.

Determination of local density of states in amorphous oxide semiconductors with Kelvin Probe Force Microscopy

Amorphous semiconductors are important materials as they can be deposited by physical deposition techniques on large areas and even on plastic substrates. Therefore, they are crucial for transistors in large active matrices for imaging and transparent wearable electronics. The most widely applied candidate for amorphous thin film transistors production is Indium Gallium Zinc Oxide (IGZO). It is attracting much interest because of its optical transparency, facile processing by sputtering deposition and notable improved charge carrier mobility with respect to hydrogenated amorphous silicon a-Si:H. Degradation of the device and long-term performance issues have been observed if IGZO thin film transistors are subjected to electrical stress, leading to a modification of IGZO channel properties and subthreshold slope. Therefore, it is of great interest to have a reliable and precise method to study the conduction band tail, and the density of states in amorphous semiconductors. The aim of this thesis is to develop a local technique using Kelvin Probe Force Microscopy to study the evolution of IGZO DOS properties. The work is divided into three main parts. First, solutions to the non-linear Poisson-Boltzmann equation of a metal-insulator-semiconductor junction describing the charge accumulation and its relation to DOS properties are elaborated. Second macroscopic techniques such as capacitance voltage (CV) measurements and photocurrent spectroscopy are applied to obtain a non-local estimate of band-tail DOS properties in thin film transistor samples. The third part of my my thesis is dedicated to the KPFM measurements. By fitting the data to the developed numerical model, important parameters describing the amorphous conduction band tail are obtained. The results are in excellent agreement with the macroscopic characterizations. KPFM result is comparable also with non-local optoelectronic characterizations, such as photocurrent spectroscopy.