Caratterizzazione e generazione di segnali PWM per amplificatori in classe D ad alta efficienza

The convergence of information technology and consumer electronics towards battery powered portable devices has increased the interest in high efficiency, low dissipation amplifiers. Class D amplifiers are the state of the art in low power consumption and high performance amplification. In this thesis we explore the possibility of exploiting nonlinearities introduced by the PWM modulation, by designing an optimized modulation law which scales its carrier frequency adaptively with the input signal's average power while preserving the SNR, thus reducing power consumption. This is achieved by means of a novel analytical model of the PWM output spectrum, which shows how interfering harmonics and their bandwidth affect the spectrum. This allows for frequency scaling with negligible aliasing between the baseband spectrum and its harmonics. We performed low noise power spectrum measurements on PWM modulations generated by comparing variable bandwidth, random test signals with a variable frequency triangular wave carrier. The experimental results show that power-optimized frequency scaling is both feasible and effective. The new analytical model also suggests a new PWM architecture that can be applied to digitally encoded input signals which are predistorted and compared with a cosine carrier, which is accurately synthesized by a digital oscillator. This approach has been simulated in a realistic noisy model and tested in our measurement setup. A zero crossing search on the obtained PWM modulation law proves that this approach yields an equivalent signal quality with respect to traditional PWM schemes, while entailing the use of signals whose bandwidth is remarkably smaller due to the use of a cosine instead of a triangular carrier.

In-situ detection of defect formation in organic flexible electronics by Kelvin Probe Force Microscopy

Organic semiconductor technology has attracted considerable research interest in view of its great promise for large area, lightweight, and flexible electronics applications. Owing to their advantages in processing and unique physical properties, organic semiconductors can bring exciting new opportunities for broad-impact applications requiring large area coverage, mechanical flexibility, low-temperature processing, and low cost. In order to achieve highly flexible device architecture it is crucial to understand on a microscopic scale how mechanical deformation affects the electrical performance of organic thin film devices. Towards this aim, I established in this thesis the experimental technique of Kelvin Probe Force Microscopy (KPFM) as a tool to investigate the morphology and the surface potential of organic semiconducting thin films under mechanical strain. KPFM has been employed to investigate the strain response of two different Organic Thin Film Transistor with active layer made by 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-Pentacene), and Poly(3-hexylthiophene-2,5-diyl) (P3HT). The results show that this technique allows to investigate on a microscopic scale failure of flexible TFT with this kind of materials during bending. I find that the abrupt reduction of TIPS-pentacene device performance at critical bending radii is related to the formation of nano-cracks in the microcrystal morphology, easily identified due to the abrupt variation in surface potential caused by local increase in resistance. Numerical simulation of the bending mechanics of the transistor structure further identifies the mechanical strain exerted on the TIPS-pentacene micro-crystals as the fundamental origin of fracture. Instead for P3HT based transistors no significant reduction in electrical performance is observed during bending. This finding is attributed to the amorphous nature of the polymer giving rise to an elastic response without the occurrence of crack formation.