Photoactive Carbon Nanostructures: From Multicomponent Arrays To Nanomaterials

Carbon has a unique ability to shape networks of differently hybridized atoms that can generate various allotropes and may also exist as nanoscale materials. The emergence of carbon nanostructures initially occured through the serendipitous discovery of fullerenes and then through experimental advances which led to carbon nanotubes, nanohorns and graphene. The structural diversity of carbon nanoscopic allotropes and their unique and unprecedentend properties, give rise to countless applications and have been intensively exploited in nanotechnology, since they may address the need to create smarter optoelectronic devices, smaller in size and with better performance. The versatile properties of carbon nanomaterials are reflected in the multidisciplinary character of my doctoral research where, in particular, I take advantage of the opportunities offered by fullerenes and carbon nanotubes in constructing novel functional materials. In this work, carbon nanostructures are incorporated in novel photoactive functional systems constructed through different types of interactions – covalent bonds, ion-pairing or self-assembly. The variety of properties exhibited by carbon nanostructures is successfully explored by assigning them a different role in a specific array: fullerenes are employed as electron or energy acceptors, whereas carbon nanotubes behave like optically inert scaffolds for luminescent materials or nanoscale substrates in sonication-induced self-assembly. All the presented systems serve as a testbed for exploring the properties of carbon nanostructures in multicomponent arrays, which may be advantageous for the production of new photovoltaic or optoelectronic devices, as well as in the design and control of self-assembly processes.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.