Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

Evaluation of seismic losses of RC buildings: the case of the industrial areas after the 2012 Emilia Earthquake

The topic of seismic loss assessment not only incorporates many aspects of the earthquake engineering, but also entails social factors, public policies and business interests. Because of its multidisciplinary character, this process may be complex to challenge, and sound discouraging to neophytes. In this context, there is an increasing need of deriving simplified methodologies to streamline the process and provide tools for decision-makers and practitioners. This dissertation investigates different possible applications both in the area of modelling of seismic losses, both in the analysis of observational seismic data. Regarding the first topic, the PRESSAFE-disp method is proposed for the fast evaluation of the fragility curves of precast reinforced-concrete (RC) structures. Hence, a direct application of the method to the productive area of San Felice is studied to assess the number of collapses under a specific seismic scenario. In particular, with reference to the 2012 events, two large-scale stochastic models are outlined. The outcomes of the framework are promising, in good agreement with the observed damage scenario. Furthermore, a simplified displacement-based methodology is outlined to estimate different loss performance metrics for the decision-making phase of the seismic retrofit of a single RC building. The aim is to evaluate the seismic performance of different retrofit options, for a comparative analysis of their effectiveness and the convenience. Finally, a contribution to the analysis of the observational data is presented in the last part of the dissertation. A specific database of losses of precast RC buildings damaged by the 2012 Earthquake is created. A statistical analysis is performed, allowing deriving several consequence functions. The outcomes presented may be implemented in probabilistic seismic risk assessments to forecast the losses at the large scale. Furthermore, these may be adopted to establish retrofit policies to prevent and reduce the consequences of future earthquakes in industrial areas.