4 resultados para ex situ SEM

em AMS Tesi di Dottorato - Alm@DL - Università di Bologna


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Organic electronics has grown enormously during the last decades driven by the encouraging results and the potentiality of these materials for allowing innovative applications, such as flexible-large-area displays, low-cost printable circuits, plastic solar cells and lab-on-a-chip devices. Moreover, their possible field of applications reaches from medicine, biotechnology, process control and environmental monitoring to defense and security requirements. However, a large number of questions regarding the mechanism of device operation remain unanswered. Along the most significant is the charge carrier transport in organic semiconductors, which is not yet well understood. Other example is the correlation between the morphology and the electrical response. Even if it is recognized that growth mode plays a crucial role into the performance of devices, it has not been exhaustively investigated. The main goal of this thesis was the finding of a correlation between growth modes, electrical properties and morphology in organic thin-film transistors (OTFTs). In order to study the thickness dependence of electrical performance in organic ultra-thin-film transistors, we have designed and developed a home-built experimental setup for performing real-time electrical monitoring and post-growth in situ electrical characterization techniques. We have grown pentacene TFTs under high vacuum conditions, varying systematically the deposition rate at a fixed room temperature. The drain source current IDS and the gate source current IGS were monitored in real-time; while a complete post-growth in situ electrical characterization was carried out. At the end, an ex situ morphological investigation was performed by using the atomic force microscope (AFM). In this work, we present the correlation for pentacene TFTs between growth conditions, Debye length and morphology (through the correlation length parameter). We have demonstrated that there is a layered charge carriers distribution, which is strongly dependent of the growth mode (i.e. rate deposition for a fixed temperature), leading to a variation of the conduction channel from 2 to 7 monolayers (MLs). We conciliate earlier reported results that were apparently contradictory. Our results made evident the necessity of reconsidering the concept of Debye length in a layered low-dimensional device. Additionally, we introduce by the first time a breakthrough technique. This technique makes evident the percolation of the first MLs on pentacene TFTs by monitoring the IGS in real-time, correlating morphological phenomena with the device electrical response. The present thesis is organized in the following five chapters. Chapter 1 makes an introduction to the organic electronics, illustrating the operation principle of TFTs. Chapter 2 presents the organic growth from theoretical and experimental points of view. The second part of this chapter presents the electrical characterization of OTFTs and the typical performance of pentacene devices is shown. In addition, we introduce a correcting technique for the reconstruction of measurements hampered by leakage current. In chapter 3, we describe in details the design and operation of our innovative home-built experimental setup for performing real-time and in situ electrical measurements. Some preliminary results and the breakthrough technique for correlating morphological and electrical changes are presented. Chapter 4 meets the most important results obtained in real-time and in situ conditions, which correlate growth conditions, electrical properties and morphology of pentacene TFTs. In chapter 5 we describe applicative experiments where the electrical performance of pentacene TFTs has been investigated in ambient conditions, in contact to water or aqueous solutions and, finally, in the detection of DNA concentration as label-free sensor, within the biosensing framework.

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In recent decades, Organic Thin Film Transistors (OTFTs) have attracted lots of interest due to their low cost, large area and flexible properties which have brought them to be considered the building blocks of the future organic electronics. Experimentally, devices based on the same organic material deposited in different ways, i.e. by varying the deposition rate of the molecules, show different electrical performance. As predicted theoretically, this is due to the speed and rate by which charge carriers can be transported by hopping in organic thin films, transport that depends on the molecular arrangement of the molecules. This strongly suggests a correlation between the morphology of the organic semiconductor and the performance of the OTFT and hence motivated us to carry out an in-situ real time SPM study of organic semiconductor growth as an almost unprecedent experiment with the aim to fully describe the morphological evolution of the ultra-thin film and find the relevant morphological parameters affecting the OTFT electrical response. For the case of 6T on silicon oxide, we have shown that the growth mechanism is 2D+3D, with a roughening transition at the third layer and a rapid roughening. Relevant morphological parameters have been extracted by the AFM images. We also developed an original mathematical model to estimate theoretically and more accurately than before, the capacitance of an EFM tip in front of a metallic substrate. Finally, we obtained Ultra High Vacuum (UHV) AFM images of 6T at lying molecules layer both on silicon oxide and on top of 6T islands. Moreover, we performed ex-situ AFM imaging on a bilayer film composed of pentacene (a p-type semiconductor) and C60 (an n-type semiconductor).

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Over the past few years, the switch towards renewable sources for energy production is considered as necessary for the future sustainability of the world environment. Hydrogen is one of the most promising energy vectors for the stocking of low density renewable sources such as wind, biomasses and sun. The production of hydrogen by the steam-iron process could be one of the most versatile approaches useful for the employment of different reducing bio-based fuels. The steam iron process is a two-step chemical looping reaction based (i) on the reduction of an iron-based oxide with an organic compound followed by (ii) a reoxidation of the reduced solid material by water, which lead to the production of hydrogen. The overall reaction is the water oxidation of the organic fuel (gasification or reforming processes) but the inherent separation of the two semireactions allows the production of carbon-free hydrogen. In this thesis, steam-iron cycle with methanol is proposed and three different oxides with the generic formula AFe2O4 (A=Co,Ni,Fe) are compared in order to understand how the chemical properties and the structural differences can affect the productivity of the overall process. The modifications occurred in used samples are deeply investigated by the analysis of used materials. A specific study on CoFe2O4-based process using both classical and in-situ/ex-situ analysis is reported employing many characterization techniques such as FTIR spectroscopy, TEM, XRD, XPS, BET, TPR and Mössbauer spectroscopy.

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The role of the amount of Nb, used as a dopant for VPP, and how its presence may affect the generation of the active and selective δ-VOPO4 at the VPP surface under reaction conditions, was investigated, employing ex-situ and in-situ characterisation techniques. We found that Nb indeed may favour, under specific conditions, the generation of the desired δ-VOPO4 compound; however, its effect of enhancement of catalytic behaviour was not simply proportional to its concentration. In order to better understand how Nb may affect the generation of the active phase, we prepared V/Nb mixed phosphates; the formation of a solid solution was possible only under specific conditions, with a limited reciprocal dissolution of the two elements. We concluded that even though the incorporation of small amounts of Nb5+ in the VOPO4 (and also of V5+ in NbOPO4) cannot be excluded, a phenomenon which might favour the generation of the desired δ-VOPO4 compound, however the main role of Nb5+ was related to a modification of the redox properties of V4+ in the VPP, and specifically of the redox potential associated to the couple V4+/V5+. This led to a catalyst that during reaction was more oxidized than the corresponding undoped VPP, which under specific reaction conditions allowed obtain a better selectivity to MA. Oppositely, an excessive oxidation of VPP (catalysts having high [Nb]) affected negatively the MA selectivity, because of the excessive formation of COx. A preliminary study regarding the oxidehydration of 1-butanol into MA was carried out testing various catalysts: the best catalyst resulted VPP; however the MA selectivity was lower than that obtained from n-butane. With in-situ/operando Raman study of the Nb-doped and undoped catalysts we verified that the redox cycle involves the VPP and the δ-VOPO4 compounds, that the reoxidation step of V4+ in VPP is the rate-determining one.