4 resultados para current measurement
em AMS Tesi di Dottorato - Alm@DL - Università di Bologna
Resumo:
In the present study, mixed systems composed of SDS in the presence of neutral cyclodextrins were considered. Firstly, the effect of the CDs on the CMC of the surfactant was evaluated by CE experiments. Furthermore, a new CE approach based on electric current measurement was developed for the estimation of the stoichiometry as well as of the binding constants of SDS-CDs complexes. The results of these investigations were compared to those obtained with a different technique, electronic paramagnetic resonance (EPR). The obtained results suggested that methylated CDs, in particular (2,6-di-O-methyl)-beta-cyclodextrin (DM-beta-CD), strongly affect the micellization of SDS in comparison to the other studied CDs. This effect also paralleled the chiral CD-MEKC performance, as indicated by the enantioresolution of (+/-)-Catechin, which was firstly selected as a model compound representative of important chiral phytomarkers. Then a CD-MEKC system, composed of sodium dodecyl sulfate as surfactant (90 mM) and hydroxypropyl-beta-cyclodextrin (25 mM) as chiral selector, under acidic conditions (25 mM borate – phosphate buffer, pH 2.5) was applied to study the thermal epimerisation of epi-structured catechins, (-)-Epicatechin and (-)-Epigallocatechin, to non epi-structured (-)-Catechin and (-)-Gallocatechin. The latter compounds, being non-native molecules, were for the first time regarded as useful phytomarkers of tea sample degradation. The proposed method was applied to the analysis of more than twenty tea samples of different geographical origins (China, Japan, Ceylon), having undergone different storage conditions and manufacturing processes.
Resumo:
In the present study we are using multi variate analysis techniques to discriminate signal from background in the fully hadronic decay channel of ttbar events. We give a brief introduction to the role of the Top quark in the standard model and a general description of the CMS Experiment at LHC. We have used the CMS experiment computing and software infrastructure to generate and prepare the data samples used in this analysis. We tested the performance of three different classifiers applied to our data samples and used the selection obtained with the Multi Layer Perceptron classifier to give an estimation of the statistical and systematical uncertainty on the cross section measurement.
Resumo:
Charmless charged two-body B decays are sensitive probes of the CKM matrix, that parameterize CP violation in the Standard Model (SM), and have the potential to reveal the presence of New Physics. The framework of CP violation within the SM, the role of the CKM matrix, with its basic formalism, and the current experimental status are presented. The theoretical tools commonly used to deal with hadronic B decays and an overview of the phenomenology of charmless two-body B decays are outlined. LHCb is one of the four main experiments operating at the Large Hadron Collider (LHC), devoted to the measurement of CP violation and rare decays of charm and beauty hadrons. The LHCb detector is described, focusing on the technologies adopted for each sub-detector and summarizing their performances. The status-of-the-art of the LHCb measurements with charmless two-body B decays is then presented. Using the 37/pb of integrated luminosity collected at sqrt(s) = 7 TeV by LHCb during 2010, the direct CP asymmetries ACP(B0 -> Kpi) = −0.074 +/- 0.033 +/- 0.008 and ACP(Bs -> piK) = 0.15 +/- 0.19 +/- 0.02 are measured. Using 320/pb of integrated luminosity collected during 2011 these measurements are updated to ACP(B0 -> Kpi) = −0.088 +/- 0.011 +/- 0.008 and ACP(Bs -> piK) = 0.27 +/- 0.08 +/- 0.02. In addition, the branching ratios BR(B0 -> K+K-) = (0.13+0.06-0.05 +/- 0.07) x 10^-6 and BR(Bs -> pi+pi-) = (0.98+0.23-0.19 +/- 0.11) x 10^-6 are measured. Finally, using a sample of 370/pb of integrated luminosity collected during 2011, the relative branching ratios BR(B0 -> pi+pi-)/BR(B0 -> Kpi) = 0.262 +/- 0.009 +/- 0.017, (fs/fd)BR(Bs -> K+K-)/BR(B0 -> Kpi)=0.316 +/- 0.009 +/- 0.019, (fs/fd)BR(Bs -> piK)/BR(B0 -> Kpi) = 0.074 +/- 0.006 +/- 0.006 and BR(Lambda_b -> ppi)/BR(Lambda_b -> pK)=0.86 +/- 0.08 +/- 0.05 are determined.
Resumo:
Power electronic circuits are moving towards higher switching frequencies, exploiting the capabilities of novel devices to shrink the dimension of passive components. This trend demands sensors capable enough to operate at such high frequencies. This thesis aims to demonstrate through experimental characterization, the broadband capability of a fully integrated CMOS X-Hall current sensor in current mode interfaced with a transimpedance amplifier (TIA), chip CH09, realized in CMOS technology for power electronics applications such as power converters. The system exploits a common-mode control system to operate the dual supply system, 5-V for the X-Hall probe and 1.2-V for the readout. The developed prototype achieves a maximum acquisition bandwidth of 12 MHz, a power consumption of 11.46 mW, resolution of 39 mArms, a sensitivity of 8 % /T, and a FoM of 569-MHz/A2mW, significantly higher than current state-of-the-art. Further enhancements were proposed to CH09 as a new chip CH100, aiming for accuracy levels prerequisite for a real-time power electronic application. The TIA was optimized for a wider bandwidth of 26.7 MHz with nearly 30% reduction of the integrated input referred noise of 26.69 nArms at the probe-AFE interface in the frequency band of DC-30 MHz, and a 10% improvement in the dynamic range. The expected input range is 5-A. The chip incorporates a dual sensing chain for differential sensing to overcome common mode interferences. A novel offset cancellation technique is proposed that would require switching of polarity of bias currents. Thermal gain drift was improved by a factor of 8 and will be digitally calibrated utilizing a new built-in temperature sensor with a post calibration measurement accuracy greater than 1%. The estimated power consumption of the entire system is 55.6 mW. Both prototypes have been implemented through a 90-nm microelectronic process from STMicroelectronics and occupy a silicon area of 2.4 mm2.