Characterization and modeling of the barrier properties in nanostructured systems

The object of the present study is the process of gas transport in nano-sized materials, i.e. systems having structural elements of the order of nanometers. The aim of this work is to advance the understanding of the gas transport mechanism in such materials, for which traditional models are not often suitable, by providing a correct interpretation of the relationship between diffusive phenomena and structural features. This result would allow the development new materials with permeation properties tailored on the specific application, especially in packaging systems. The methods used to achieve this goal were a detailed experimental characterization and different simulation methods. The experimental campaign regarded the determination of oxygen permeability and diffusivity in different sets of organic-inorganic hybrid coatings prepared via sol-gel technique. The polymeric samples coated with these hybrid layers experienced a remarkable enhancement of the barrier properties, which was explained by the strong interconnection at the nano-scale between the organic moiety and silica domains. An analogous characterization was performed on microfibrillated cellulose films, which presented remarkable barrier effect toward oxygen when it is dry, while in the presence of water the performance significantly drops. The very low value of water diffusivity at low activities is also an interesting characteristic which deals with its structural properties. Two different approaches of simulation were then considered: the diffusion of oxygen through polymer-layered silicates was modeled on a continuum scale with a CFD software, while the properties of n-alkanthiolate self assembled monolayers on gold were analyzed from a molecular point of view by means of a molecular dynamics algorithm. Modeling transport properties in layered nanocomposites, resulting from the ordered dispersion of impermeable flakes in a 2-D matrix, allowed the calculation of the enhancement of barrier effect in relation with platelets structural parameters leading to derive a new expression. On this basis, randomly distributed systems were simulated and the results were analyzed to evaluate the different contributions to the overall effect. The study of more realistic three-dimensional geometries revealed a prefect correspondence with the 2-D approximation. A completely different approach was applied to simulate the effect of temperature on the oxygen transport through self assembled monolayers; the structural information obtained from equilibrium MD simulations showed that raising the temperature, makes the monolayer less ordered and consequently less crystalline. This disorder produces a decrease in the barrier free energy and it lowers the overall resistance to oxygen diffusion, making the monolayer more permeable to small molecules.

Chemical Production and Microelectronic Applications of Graphene and Nano-Graphene Derivatives

Graphene and graphenic derivatives have rapidly emerged as an extremely promising system for electronic, optical, thermal, and electromechanical applications. Several approaches have been developed to produce these materials (i.e. scotch tape, CVD, chemical and solvent exfoliation). In this work we report a chemical approach to produce graphene by reducing graphene oxide (GO) via thermal or electrical methods. A morphological and electrical characterization of these systems has been performed using different techniques such as SPM, SEM, TEM, Raman and XPS. Moreover, we studied the interaction between graphene derivates and organic molecules focusing on the following aspects: - improvement of optical contrast of graphene on different substrates for rapid monolayer identification1 - supramolecular interaction with organic molecules (i.e. thiophene, pyrene etc.)4 - covalent functionalization with optically active molecules2 - preparation and characterization of organic/graphene Field Effect Transistors3-5 Graphene chemistry can potentially allow seamless integration of graphene technology in organic electronics devices to improve device performance and develop new applications for graphene-based materials. [1] E. Treossi, M. Melucci, A. Liscio, M. Gazzano, P. Samorì, and V. Palermo, J. Am. Chem. Soc., 2009, 131, 15576. [2] M. Melucci, E. Treossi, L. Ortolani, G. Giambastiani, V. Morandi, P. Klar, C. Casiraghi, P. Samorì, and V. Palermo, J. Mater. Chem., 2010, 20, 9052. [3] J.M. Mativetsky, E. Treossi, E. Orgiu, M. Melucci, G.P. Veronese, P. Samorì, and V. Palermo, J. Am. Chem. Soc., 2010, 132, 14130. [4] A. Liscio, G.P. Veronese, E. Treossi, F. Suriano, F. Rossella, V. Bellani, R. Rizzoli, P. Samorì and V. Palermo, J. Mater. Chem., 2011, 21, 2924. [5] J.M. Mativetsky, A. Liscio, E. Treossi, E. Orgiu, A. Zanelli, P. Samorì , V. Palermo, J. Am. Chem. Soc., 2011, 133, 14320

Numerical Modelling of Graphene Nanoribbon-fets for Analog and Digital Applications

Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.