Towards the generation of photoactive nanomaterials: a supramolecular approach

Objective of these four first chapters is to have a complete understanding of the supramolecular organisation of several complementary modules able to form 2-D networks first in solution using optical spectroscopy measurements as function of solvent polarity , concentration and temperature, and then on solid surface using microscopy techniques such as STM, AFM and TEM. The last chapter presents another type of supramolecular material for application in solar cells technology involving fullerenes and OPV systems. We describes the photoinduced energy and electron process using transient absorption experiments. All these systems provide an exceptional example for the potential of the supramolecular approach as an alternative to the restricted lithographic method for the fabrication of adressable molecular devices.

Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.

Study of molecules of astrochemical, astrophysical and atmospheric interest by means of High - Resolution Infrared Spectroscopy

The spectroscopic investigation of the gas-phase molecules relevant for the chemistry of the atmosphere and of the interstellar medium has been performed. Two types of molecules have been studied, linear and symmetric top. Several experimental high-resolution techniques have been adopted, exploiting the spectrometers available in Bologna, Venezia, Brussels and Wuppertal: Fourier-Transform-Infrared Spectroscopy, Cavity-Ring-Down Spectroscopy, Cavity-Enhanced-Absorption Spectroscopy, Tunable-Diode-Laser Spectroscopy. Concerning linear molecules, the spectra of a number of isotopologues of acetylene, 12C2D2, H12C13CD, H13C12CD, 13C12CD2, of DCCF and monodeuterodiacetylene DC4H, have been studied, from 320 to 6800 cm-1. This interval covers bending, stretching, overtone and combination bands, the focus on specific ranges depending on the molecule. In particular, the analysis of the bending modes has been performed for 12C2D2 (450-2200 cm-1), 13C12CD2 (450-1700 cm-1), DCCF (320-850cm-1) and DC4H (450-1100 cm-1), of the stretching-bending system for 12C2D2 (450-5500 cm-1) and of the 2nu1 and combination bands up to four quanta of excitation for H12C13CD, H13C12CD and 13C12CD2 (6130-6800 cm-1). In case of symmetric top molecules, CH3CCH has been investigated in the 2nu1 region (6200-6700 cm-1), which is particularly congested due to the huge network of states affected by Coriolis and anharmonic interactions. The bending fundamentals of 15ND3 (450-2700 cm-1) have been studied for the first time, characterizing completely the bending states, v2 = 1 and v4 = 1, whereas the analysis of the stretching modes, which evidenced the presence of several perturbations, has been started. Finally, the fundamental band nu4 of CF3Br in the 1190-1220 cm-1 region has been investigated. Transitions belonging to the CF379Br and CF381Br molecules have been identified since the spectra were recorded using a sample containing the two isotopologues in natural abundance. This allowed the characterization of the v4 = 1 state for both isotopologues and the evaluation of the bromine isotopic splitting.

Development of new analytical procedures aimet at the characterization of artistic samples

In this thesis, new advances in the development of spectroscopic based methods for the characterization of heritage materials have been achieved. As concern FTIR spectroscopy new approaches aimed at exploiting near and far IR region for the characterization of inorganic or organic materials have been tested. Paint cross-section have been analysed by FTIR spectroscopy in the NIR range and an “ad hoc” chemometric approach has been developed for the elaboration of hyperspectral maps. Moreover, a new method for the characterization of calcite based on the use of grinding curves has been set up both in MIR and in FAR region. Indeed, calcite is a material widely applied in cultural heritage, and this spectroscopic approach is an efficient and rapid tool to distinguish between different calcite samples. Different enhanced vibrational techniques for the characterisation of dyed fibres have been tested. First a SEIRA (Surface Enhanced Infra-Red Absorption) protocol has been optimised allowing the analysis of colorant micro-extracts thanks to the enhancement produced by the addition of gold nanoparticles. These preliminary studies permitted to identify a new enhanced FTIR method, named ATR/RAIRS, which allowed to reach lower detection limits. Regarding Raman microscopy, the research followed two lines, which have in common the aim of avoiding the use of colloidal solutions. AgI based supports obtained after deposition on a gold-coated glass slides have been developed and tested spotting colorant solutions. A SERS spectrum can be obtained thanks to the photoreduction, which the laser may induce on the silver salt. Moreover, these supports can be used for the TLC separation of a mixture of colorants and the analyses by means of both Raman/SERS and ATR-RAIRS can be successfully reached. Finally, a photoreduction method for the “on fiber” analysis of colorant without the need of any extraction have been optimised.

Photoinduced electronic transitions and leakage correlation to defects/dislocations in GaN heterostructures

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.