Advanced Numerical Simulation of Silicon-Based Solar Cells

Photovoltaic (PV) conversion is the direct production of electrical energy from sun without involving the emission of polluting substances. In order to be competitive with other energy sources, cost of the PV technology must be reduced ensuring adequate conversion efficiencies. These goals have motivated the interest of researchers in investigating advanced designs of crystalline silicon solar (c-Si) cells. Since lowering the cost of PV devices involves the reduction of the volume of semiconductor, an effective light trapping strategy aimed at increasing the photon absorption is required. Modeling of solar cells by electro-optical numerical simulation is helpful to predict the performance of future generations devices exhibiting advanced light-trapping schemes and to provide new and more specific guidelines to industry. The approaches to optical simulation commonly adopted for c-Si solar cells may lead to inaccurate results in case of thin film and nano-stuctured solar cells. On the other hand, rigorous solvers of Maxwell equations are really cpu- and memory-intensive. Recently, in optical simulation of solar cells, the RCWA method has gained relevance, providing a good trade-off between accuracy and computational resources requirement. This thesis is a contribution to the numerical simulation of advanced silicon solar cells by means of a state-of-the-art numerical 2-D/3-D device simulator, that has been successfully applied to the simulation of selective emitter and the rear point contact solar cells, for which the multi-dimensionality of the transport model is required in order to properly account for all physical competing mechanisms. In the second part of the thesis, the optical problems is discussed. Two novel and computationally efficient RCWA implementations for 2-D simulation domains as well as a third RCWA for 3-D structures based on an eigenvalues calculation approach have been presented. The proposed simulators have been validated in terms of accuracy, numerical convergence, computation time and correctness of results.

Enhancing the efficiency of solar concentrators by controlled optical aberrations

The diameters of traditional dish concentrators can reach several tens of meters, the construction of monolithic mirrors being difficult at these scales: cheap flat reflecting facets mounted on a common frame generally reproduce a paraboloidal surface. When a standard imaging mirror is coupled with a PV dense array, problems arise since the solar image focused is intrinsically circular. Moreover, the corresponding irradiance distribution is bell-shaped in contrast with the requirement of having all the cells under the same illumination. Mismatch losses occur when interconnected cells experience different conditions, in particular in series connections. In this PhD Thesis, we aim at solving these issues by a multidisciplinary approach, exploiting optical concepts and applications developed specifically for astronomical use, where the improvement of the image quality is a very important issue. The strategy we propose is to boost the spot uniformity acting uniquely on the primary reflector and avoiding the big mirrors segmentation into numerous smaller elements that need to be accurately mounted and aligned. In the proposed method, the shape of the mirrors is analytically described by the Zernike polynomials and its optimization is numerically obtained to give a non-imaging optics able to produce a quasi-square spot, spatially uniform and with prescribed concentration level. The freeform primary optics leads to a substantial gain in efficiency without secondary optics. Simple electrical schemes for the receiver are also required. The concept has been investigated theoretically modeling an example of CPV dense array application, including the development of non-optical aspects as the design of the detector and of the supporting mechanics. For the method proposed and the specific CPV system described, a patent application has been filed in Italy with the number TO2014A000016. The patent has been developed thanks to the collaboration between the University of Bologna and INAF (National Institute for Astrophysics).

Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.