A multifrequency study of the Lockman Hole region: preparing for a LOFAR deep survey

In this thesis, we have presented two deep 1.4 GHz and 345 MHz overlapping surveys of the Lockman Hole field taken with the Westerbork Synthesis Radio Telescope. We extracted a catalogue of ~6000 radio sources from the 1.4 GHz mosaic down to a flux limit of ~55 μJy and a catalogue of 334 radio sources down to a flux limit of ~4 mJy from the inner 7 sq. degree region of the 345 MHz image. The extracted catalogues were used to derive the source number counts at 1.4 GHz and at 345 MHz. The source counts were found to be fully consistent with previous determinations. In particular the 1.4 GHz source counts derived by the present sample provide one of the most statistically robust determinations in the flux range 0.1 < S < 1 mJy. During the commissioning program of the LOFAR telescope, the Lockman Hole field was observed at 58 MHz and 150 MHz. The 150 MHz LOFAR observation is particularly relevant as it allowed us to obtain the first LOFAR flux calibrated high resolution image of a deep field. From this image we extracted a preliminary source catalogue down to a flux limit of ~15 mJy (~10σ), that can be considered complete down to 20‒30 mJy. A spectral index study of the mJy sources in the Lockman Hole region, was performed using the available catalogues ( 1.4 GHz, 345 MHz and 150 MHz) and a deep 610 MHz source catalogue available from the literature (Garn et al. 2008, 2010).

Organic heterostructure approach for multifunctional light-emitting field-effect transistors

The possibility of combining different functionalities in a single device is of great relevance for further development of organic electronics in integrated components and circuitry. Organic light-emitting transistors (OLETs) have been demonstrated to be able to combine in a single device the electrical switching functionality of a field-effect transistor and the capability of light generation. A novel strategy in OLET realization is the tri-layer vertical hetero-junction. This configuration is similar to the bi-layer except for the presence of a new middle layer between the two transport layers. This “recombination” layer presents high emission quantum efficiency and OLED-like (Organic Light-Emitting Diode) vertical bulk mobility value. The key idea of the vertical tri-layer hetero-junction approach in realizing OLETs is that each layer has to be optimized according to its specific function (charge transport, energy transfer, radiative exciton recombination). Clearly, matching the overall device characteristics with the functional properties of the single materials composing the active region of the OFET, is a great challenge that requires a deep investigation of the morphological, optical and electrical features of the system. As in the case of the bi-layer based OLETs, it is clear that the interfaces between the dielectric and the bottom transport layer and between the recombination and the top transport layer are crucial for guaranteeing good ambipolar field-effect electrical characteristics. Moreover interfaces between the bottom transport and the recombination layer and between the recombination and the top transport layer should provide the favourable conditions for the charge percolation to happen in the recombination layer and form excitons. Organic light emitting transistor based on the tri-layer approach with external quantum efficiency out-performing the OLED state of the art has been recently demonstrated [Capelli et al., Nat. Mater. 9 (2010) 496-503] widening the scientific and technological interest in this field of research.