2 resultados para Highly resistive layer
em AMS Tesi di Dottorato - Alm@DL - Università di Bologna
Resumo:
The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and scalability. This alternative non-volatile memory technology, which uses resistance contrast in phase-change materials, offers more density relative to DRAM, and can help to increase main memory capacity of future systems while remaining within the cost and power constraints. Chalcogenide materials can suitably be exploited for manufacturing phase-change memory devices. Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. Crystalline GST exhibits an almost Ohmic I(V) curve. In contrast amorphous GST shows a high resistance at low biases while, above a threshold voltage, a transition takes place from a highly resistive to a conductive state, characterized by a negative differential-resistance behavior. A clear and complete understanding of the threshold behavior of the amorphous phase is fundamental for exploiting such materials in the fabrication of innovative nonvolatile memories. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron–electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.
Resumo:
Biological systems are complex and highly organized architectures governed by non-covalent interactions responsible for the regulation of essential tasks in all living organisms. These systems are a constant source of inspiration for supramolecular chemists aiming to design multicomponent molecular assemblies able to perform elaborated tasks, thanks to the role and action of the components that constitute them. Artificial supramolecular systems exploit non-covalent interactions to mimic naturally occurring events. In this context, stimuli-responsive supramolecular systems have attracted attention due to the possibility to control macroscopic effects through modifications at the nanoscale. This thesis is divided in three experimental chapters, characterized by a progressive increase in molecular complexity. Initially, the preparation and studies of liposomes functionalized with a photoactive guest such as azobenzene in the bilayer were tackled, in order to evaluate the effect of such photochrome on the vesicle properties. Subsequently, the synthesis and studies of thread-like molecules comprising an azobenzene functionality was reported. Such molecules were conceived to be intercalated in the bilayer membrane of liposomes with the aim to be used as components for photoresponsive transmembrane molecular pumps. Finally, a [3]rotaxane was developed and studied in solution. This system is composed of two crown ether rings interlocked with an axle containing three recognition sites for the macrocycles, i.e. two pH-switchable ammonium stations and a permanent triazolium station. Such molecule was designed to achieve a change in the ratio between the recognition sites and the crown ethers as a consequence of acid-base inputs. This leads to the formation of rotaxanes containing a number of recognition sites respectively larger, equal or lower than the number of interlocked rings and connected by a network of acid-base reactions.