Optimization of purification procedures in organic semiconductor synthesis for improving the performances of organic field-effect transistors

The aim of the research activity focused on the investigation of the correlation between the degree of purity in terms of chemical dopants in organic small molecule semiconductors and their electrical and optoelectronic performances once introduced as active material in devices. The first step of the work was addressed to the study of the electrical performances variation of two commercial organic semiconductors after being processed by means of thermal sublimation process. In particular, the p-type 2,2′′′-Dihexyl-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DH4T) semiconductor and the n-type 2,2′′′- Perfluoro-Dihexyl-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH4T) semiconductor underwent several sublimation cycles, with consequent improvement of the electrical performances in terms of charge mobility and threshold voltage, highlighting the benefits brought by this treatment to the electric properties of the discussed semiconductors in OFET devices by the removal of residual impurities. The second step consisted in the provision of a metal-free synthesis of DH4T, which was successfully prepared without organometallic reagents or catalysts in collaboration with Dr. Manuela Melucci from ISOF-CNR Institute in Bologna. Indeed the experimental work demonstrated that those compounds are responsible for the electrical degradation by intentionally doping the semiconductor obtained by metal-free method by Tetrakis(triphenylphosphine)palladium(0) (Pd(PPh3)4) and Tributyltin chloride (Bu3SnCl), as well as with an organic impurity, like 5-hexyl-2,2':5',2''-terthiophene (HexT3) at, in different concentrations (1, 5 and 10% w/w). After completing the entire evaluation process loop, from fabricating OFET devices by vacuum sublimation with implemented intentionally-doped batches to the final electrical characterization in inherent-atmosphere conditions, commercial DH4T, metal-free DH4T and the intentionally-doped DH4T were systematically compared. Indeed, the fabrication of OFET based on doped DH4T clearly pointed out that the vacuum sublimation is still an inherent and efficient purification method for crude semiconductors, but also a reliable way to fabricate high performing devices.

Study and development of BaCe0.65Zr0.20Y0.1503-Δ (BCZY) – Gd0.2Ce0.8O2-Δ (GDC) dense ceramic membranes sysyem for high temperature H2 purification

The first main conclusion drawn from this dissertation concerns the amount of Pt deposited on the asymmetric layer of membrane produced by tape casting porosity shaping method. Three different amounts were investigated (0.15, 1.5 and 4.5 mg cm-2 ). The most optimal performance, based on H2 permeation performances, was attained when 1.5 mg cm-2 of Pt was deposited on the porous layer, resulting in a 0.642 mL min-1 cm-2 permeated H2 when 80% H2 in He was employed as the feed. Pt deposition method is influenced by the concentration of the Pt precursor, which results in different morphology of the catalyst. The second development focused on further optimization on tape casting membranes concerning the solvent employed for the Pt catalyst deposition. The same concentration of Pt was employed, depositing 1.5 mg cm-2 on the porous side of the membrane, but a mixture of acetone and water was employed as solvent. This mixture allowed the suppression of effects leading to poorly dispersed particles. As a result, it was possible to achieve 0.74 mL min-1 cm-2 at 750°C with 50% H2 in He. Lastly, first-ever permeation performance measurements into an innovative ceramic membrane type for hydrogen separation was investigated. In-depth research was done on a group of hierarchically-structured BaCe0.65Zr0.20Y0.15O3-δ(BCZY) - Gd0.2Ce0.8O2-δ(GDC) membranes produced by freeze casting porosity shaping method. Membranes were investigated observing the effect of deposition solvent and the effect of porous layer thickness. Employing a mixture of Acetone and water resulted in better hydrogen permeation at temperatures (T > 650°C), reaching 0.26 mL min-1 cm-2 at 750°C with 50% H2 in He. The reduction of porous layer thickness led to a hydrogen flow of 0.33 mL min-1 cm-2 , at 750°C with 50% H2 in He.