2 resultados para Gates.
em AMS Tesi di Dottorato - Alm@DL - Università di Bologna
Resumo:
Traditional logic gates are rapidly reaching the limits of miniaturization. Overheating of these components is no longer negligible. A new physical approach to the machine was proposed by Prof. C S. Lent “Molecular Quantum cellular automata”. Indeed the quantum-dot cellular automata (QCA) approach offers an attractive alternative to diode or transistor devices. Th units encode binary information by two polarizations without corrent flow. The units for QCA theory are called QCA cells and can be realized in several way. Molecules can act as QCA cells at room temperature. In collaboration with STMicroelectronic, the group of Electrochemistry of Prof. Paolucci and the Nananotecnology laboratory from Lecce, we synthesized and studied with many techniques surface-active chiral bis-ferrocenes, conveniently designed in order to act as prototypical units for molecular computing devices. The chemistry of ferrocene has been studied thoroughly and found the opportunity to promote substitution reaction of a ferrocenyl alcohols with various nucleophiles without the aid of Lewis acid as catalysts. The only interaction between water and the two reagents is involve in the formation of a carbocation specie which is the true reactive species. We have generalized this concept to other benzyl alcohols which generating stabilized carbocations. Carbocation describe in Mayr’s scale were fondametal for our research. Finally, we used these alcohols to alkylate in enantioselective way aldehydes via organocatalysis.
Resumo:
To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.
