Il Montalbano nel Medioevo: Strumenti informatici per l’analisi archeologica del territorio e delle strutture architettoniche

La ricerca ha preso in esame l’analisi archeologica di un territorio medievale e la sperimentazione di strumenti informatici per la gestione e l’analisi dei dati prodotti dalla ricerca stessa. Il Montalbano, oggetto della ricerca, è una microregione caratterizzata da elementi che la rendono molto interessante. Si tratta di una catena submontana che divide la piana di Firenze-Prato-Pistoia dal Valdarno inferiore. Questa posizione di frontiera ne ha fatto l’oggetto di mire espansionistiche da parte delle principali famiglie signorili prima, dei comuni poi. In una prima fase sono stati censiti i siti attestati dalle fonti documentarie e materiali per capire le dinamiche insediative del popolamento medievale e le strategie di controllo di un territorio caratterizzato dall’assenza di un’egemonia da parte di un solo potere (almeno fino a metà ‘300). L’analisi stratigrafica si è poi concentrata sulle strutture architettoniche religiose, in quanto offrono la maggior quantità di dati dal punto di vista documentario e archeologico. È stato così possibile ottenere un quadro delle tecniche costruttive medievali e delle influenze culturali che lo hanno prodotto. I dati archeologici sono stati gestiti attraverso una piattaforma gis sviluppata all’interno del Laboratorio di Archeologia Medievale dell’Università di Firenze in collaborazione con il laboratorio LSIS del CNRS di Marsiglia. Questa è stata appositamente strutturata secondo le procedure di raccolta e organizzazione dati utilizzate durante l’analisi archeologica. Le singole strutture indagate sono inoltre state oggetto di un rilievo 3d fotogrammetrico che in alcuni casi studio è stato anche utilizzato come base di accesso ai dati derivanti dall’analisi stratigrafica, all’interno di un’applicazione gis 3d (Arpenteur). Questo ha permesso di connettere all’interno di un’unica piattaforma i dati geometrici ed archeometrici con quelli archeologici, utilizzando i primi come interfaccia di accesso ai secondi.

Physical models for numerical simulation of Si-based nanoscale FETs and sensors

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.

Advanced Numerical Simulation of Silicon-Based Solar Cells

Photovoltaic (PV) conversion is the direct production of electrical energy from sun without involving the emission of polluting substances. In order to be competitive with other energy sources, cost of the PV technology must be reduced ensuring adequate conversion efficiencies. These goals have motivated the interest of researchers in investigating advanced designs of crystalline silicon solar (c-Si) cells. Since lowering the cost of PV devices involves the reduction of the volume of semiconductor, an effective light trapping strategy aimed at increasing the photon absorption is required. Modeling of solar cells by electro-optical numerical simulation is helpful to predict the performance of future generations devices exhibiting advanced light-trapping schemes and to provide new and more specific guidelines to industry. The approaches to optical simulation commonly adopted for c-Si solar cells may lead to inaccurate results in case of thin film and nano-stuctured solar cells. On the other hand, rigorous solvers of Maxwell equations are really cpu- and memory-intensive. Recently, in optical simulation of solar cells, the RCWA method has gained relevance, providing a good trade-off between accuracy and computational resources requirement. This thesis is a contribution to the numerical simulation of advanced silicon solar cells by means of a state-of-the-art numerical 2-D/3-D device simulator, that has been successfully applied to the simulation of selective emitter and the rear point contact solar cells, for which the multi-dimensionality of the transport model is required in order to properly account for all physical competing mechanisms. In the second part of the thesis, the optical problems is discussed. Two novel and computationally efficient RCWA implementations for 2-D simulation domains as well as a third RCWA for 3-D structures based on an eigenvalues calculation approach have been presented. The proposed simulators have been validated in terms of accuracy, numerical convergence, computation time and correctness of results.