2 resultados para D. Electron-phonon interactions
em AMS Tesi di Dottorato - Alm@DL - Università di Bologna
Resumo:
The procedure for event location in OPERA ECC has been optimazed for penetrating particles while is less efficient for electrons. For this reason new procedure has been defined in order to recover event with an electromagnetic shower in its final state not located with the standard one. The new procedure include the standard procedure during which several electromagnetic shower hint has been defined by means of the available data. In case the event is not located, the presence of an electromagnetic shower hint trigger a dedicated procedure. The old and new location procedure has been then simulated in order to obtain the standard location efficiency and the possible gain due to the new one for the events with electromagnetic shower. Finally a Data-MC comparison has been performed for the 2008 and 2009 runs for what concern the NC in order to validate the Monte Carlo. Then the expected electron neutrino interactions for the 2008 and 2009 runs has been evaluated and compared with the available data.
Resumo:
Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.