Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Peak-to-Peak Output Current Ripple Analysis in Multiphase and Multilevel Inverters

Analysis of the peak-to-peak output current ripple amplitude for multiphase and multilevel inverters is presented in this PhD thesis. The current ripple is calculated on the basis of the alternating voltage component, and peak-to-peak value is defined by the current slopes and application times of the voltage levels in a switching period. Detailed analytical expressions of peak-to-peak current ripple distribution over a fundamental period are given as function of the modulation index. For all the cases, reference is made to centered and symmetrical switching patterns, generated either by carrier-based or space vector PWM. Starting from the definition and the analysis of the output current ripple in three-phase two-level inverters, the theoretical developments have been extended to the case of multiphase inverters, with emphasis on the five- and seven-phase inverters. The instantaneous current ripple is introduced for a generic balanced multiphase loads consisting of series RL impedance and ac back emf (RLE). Simplified and effective expressions to account for the maximum of the output current ripple have been defined. The peak-to-peak current ripple diagrams are presented and discussed. The analysis of the output current ripple has been extended also to multilevel inverters, specifically three-phase three-level inverters. Also in this case, the current ripple analysis is carried out for a balanced three-phase system consisting of series RL impedance and ac back emf (RLE), representing both motor loads and grid-connected applications. The peak-to-peak current ripple diagrams are presented and discussed. In addition, simulation and experimental results are carried out to prove the validity of the analytical developments in all the cases. The cases with different phase numbers and with different number of levels are compared among them, and some useful conclusions have been pointed out. Furthermore, some application examples are given.