6 resultados para Circuit of Sacoleiros

em AMS Tesi di Dottorato - Alm@DL - Università di Bologna


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Neisseria meningitidis (Nm) is the major cause of septicemia and meningococcal meningitis. During the course of infection, it must adapt to different host environments as a crucial factor for survival. Despite the severity of meningococcal sepsis, little is known about how Nm adapts to permit survival and growth in human blood. A previous time-course transcriptome analysis, using an ex vivo model of human whole blood infection, showed that Nm alters the expression of nearly 30% of ORFs of the genome: major dynamic changes were observed in the expression of transcriptional regulators, transport and binding proteins, energy metabolism, and surface-exposed virulence factors. Starting from these data, mutagenesis studies of a subset of up-regulated genes were performed and the mutants were tested for the ability to survive in human whole blood; Nm mutant strains lacking the genes encoding NMB1483, NalP, Mip, NspA, Fur, TbpB, and LctP were sensitive to killing by human blood. Then, the analysis was extended to the whole Nm transcriptome in human blood, using a customized 60-mer oligonucleotide tiling microarray. The application of specifically developed software combined with this new tiling array allowed the identification of different types of regulated transcripts: small intergenic RNAs, antisense RNAs, 5’ and 3’ untranslated regions and operons. The expression of these RNA molecules was confirmed by 5’-3’RACE protocol and specific RT-PCR. Here we describe the complete transcriptome of Nm during incubation in human blood; we were able to identify new proteins important for survival in human blood and also to identify additional roles of previously known virulence factors in aiding survival in blood. In addition the tiling array analysis demonstrated that Nm expresses a set of new transcripts, not previously identified, and suggests the presence of a circuit of regulatory RNA elements used by Nm to adapt to proliferate in human blood.

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Today the design of hydraulic and lubrication circuits is becoming more and more important. The aim of this study is to develop a methodology for the design of the lubrication circuit of an agricultural tractor. In this paper the lubrication circuit of a continuously variable transmission is analysed. Several lines of the circuit are considered and in particular the lubrication of gears is discussed. The worst possible working condition which corresponds to the highest power dissipation for each part of the transmission is determined. The model of the lubrication circuit is developed with two different software simulations (Automation Studio & Amesim). In order to check the reliability of the simulation models and to characterise the lubrication circuit, experimental tests are performed. The comparison between the values of pressure drops obtained by the models and by the experimental test, demonstrates that it is possible to use these programs for the set up of a simple model of the lubrication circuit. The calculation of oil flows necessary for a force-fed lubrication of the gears, the simulation of the circuit by commercial software, and the validation of the circuit design allow to set up a preliminary equilibrium among the pipes and a proper flow rate distribution. Optimising the circuit design in the initial phase of the project is very important. The experimental adjustment of the circuit, which is often difficult, can be simplified; time and cost production can be reduced.

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L’attività di ricerca contenuta in questa tesi si è concentrata nello sviluppo e nell’implementazione di tecniche per la co-simulazione e il co-progetto non lineare/elettromagnetico di sistemi wireless non convenzionali. Questo lavoro presenta un metodo rigoroso per considerare le interazioni tra due sistemi posti sia in condizioni di campo vicino che in condizioni di campo lontano. In sostanza, gli effetti del sistema trasmittente sono rappresentati da un generatore equivalente di Norton posto in parallelo all’antenna del sistema ricevente, calcolato per mezzo del teorema di reciprocità e del teorema di equivalenza. La correttezza del metodo è stata verificata per mezzo di simulazioni e misure, concordi tra loro. La stessa teoria, ampliata con l’introduzione degli effetti di scattering, è stata usata per valutare una condizione analoga, dove l’elemento trasmittente coincide con quello ricevente (DIE) contenuto all’interno di una struttura metallica (package). I risultati sono stati confrontati con i medesimi ottenibili tramite tecniche FEM e FDTD/FIT, che richiedono tempi di simulazione maggiori di un ordine di grandezza. Grazie ai metodi di co-simulazione non lineari/EM sopra esposti, è stato progettato e verificato un sistema di localizzazione e identificazione di oggetti taggati posti in ambiente indoor. Questo è stato ottenuto dotando il sistema di lettura, denominato RID (Remotely Identify and Detect), di funzioni di scansione angolare e della tecnica di RADAR mono-pulse. Il sistema sperimentale, creato con dispositivi low cost, opera a 2.5 GHz ed ha le dimensioni paragonabili ad un normale PDA. E’ stato sperimentata la capacità del RID di localizzare, in scenari indoor, oggetti statici e in movimento.

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Ferrara è tra le città con le quali Piero Bottoni (1903-1973) ha istaurato un rapporto proficuo e duraturo che gli permise di elaborare molti progetti e che fu costante lungo quasi tutta la parabola professionale dell’autore milanese. Giunto nella città estense nei primi anni Trenta, vi lavorò nei tre decenni successivi elaborando progetti che spaziavano dalla scala dell’arredamento d’interni fino a quella urbana; i diciannove progetti studiati, tutti situati all’interno del centro storico della città, hanno come tema comune la relazione tra nuova architettura e città esistente. Osservando un ampio spettro di interventi che abbracciava la progettazione sull'esistente come quella del nuovo, Bottoni propone una visione dell'architettura senza suddivisioni disciplinari intendendo il restauro e la costruzione del nuovo come parti di un processo progettuale unitario. Sullo sfondo di questa vicenda, la cultura ferrarese tra le due guerre e nel Dopoguerra si caratterizza per il continuo tentativo di rendere attuale la propria storia rinascimentale effettuando operazioni di riscoperta che con continuità, a discapito dei cambiamenti politici, contraddistinguono le esperienze culturali condotte nel corso del Novecento. Con la contemporanea presenza durante gli anni Cinquanta e Sessanta di Bottoni, Zevi, Pane, Michelucci, Piccinato, Samonà, Bassani e Ragghianti, tutti impegnati nella costruzione dell’immagine storiografica della Ferrara rinascimentale, i caratteri di questa stagione culturale si fondono con i temi centrali del dibattito architettonico italiano e con quello per la salvaguardia dei centri storici. L’analisi dell’opera ferrarese di Piero Bottoni è così l’occasione per mostrare da un lato un carattere peculiare della sua architettura e, dall’altro, di studiare un contesto cultuale provinciale al fine di mostrare i punti di contatto tra le personalità presenti a Ferrara in quegli anni, di osservarne le reciproche influenze e di distinguere gli scambi avvenuti tra i principali centri della cultura architettonica italiana e un ambito geografico solo apparentemente secondario.

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This thesis deals with two important research aspects concerning radio frequency (RF) microresonators and switches. First, a new approach for compact modeling and simulation of these devices is presented. Then, a combined process flow for their simultaneous fabrication on a SOI substrate is proposed. Compact models for microresonators and switches are extracted by applying mathematical model order reduction (MOR) to the devices finite element (FE) description in ANSYS c° . The behaviour of these devices includes forms of nonlinearities. However, an approximation in the creation of the FE model is introduced, which enables the use of linear model order reduction. Microresonators are modeled with the introduction of transducer elements, which allow for direct coupling of the electrical and mechanical domain. The coupled system element matrices are linearized around an operating point and reduced. The resulting macromodel is valid for small signal analysis around the bias point, such as harmonic pre-stressed analysis. This is extremely useful for characterizing the frequency response of resonators. Compact modelling of switches preserves the nonlinearity of the device behaviour. Nonlinear reduced order models are obtained by reducing the number of nonlinearities in the system and handling them as input to the system. In this way, the system can be reduced using linear MOR techniques and nonlinearities are introduced directly in the reduced order model. The reduction of the number of system nonlinearities implies the approximation of all distributed forces in the model with lumped forces. Both for microresonators and switches, a procedure for matrices extraction has been developed so that reduced order models include the effects of electrical and mechanical pre-stress. The extraction process is fast and can be done automatically from ANSYS binary files. The method has been applied for the simulation of several devices both at devices and circuit level. Simulation results have been compared with full model simulations, and, when available, experimental data. Reduced order models have proven to conserve the accuracy of finite element method and to give a good description of the overall device behaviour, despite the introduced approximations. In addition, simulation is very fast, both at device and circuit level. A combined process-flow for the integrated fabrication of microresonators and switches has been defined. For this purpose, two processes that are optimized for the independent fabrication of these devices are merged. The major advantage of this process is the possibility to create on-chip circuit blocks that include both microresonators and switches. An application is, for example, aswitched filter bank for wireless transceiver. The process for microresonators fabrication is characterized by the use of silicon on insulator (SOI) wafers and on a deep reactive ion etching (DRIE) step for the creation of the vibrating structures in single-crystal silicon and the use of a sacrificial oxide layer for the definition of resonator to electrode distance. The fabrication of switches is characterized by the use of two different conductive layers for the definition of the actuation electrodes and by the use of a photoresist as a sacrificial layer for the creation of the suspended structure. Both processes have a gold electroplating step, for the creation of the resonators electrodes, transmission lines and suspended structures. The combined process flow is designed such that it conserves the basic properties of the original processes. Neither the performance of the resonators nor the performance of the switches results affected by the simultaneous fabrication. Moreover, common fabrication steps are shared, which allows for cheaper and faster fabrication.

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This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on an equivalent voltage approach, a new low frequency device model is presented where the dynamic nonlinearity of the trapping effect is taken into account for the first time allowing considerable improvements in the prediction of very important quantities for the design of power amplifier such as power added efficiency, dissipated power and internal device temperature. An innovative and low-cost measurement setup for the characterization of the device under low-frequency large-amplitude sinusoidal excitation is also presented. This setup allows the identification of the new low frequency model through suitable procedures explained in detail. In this thesis a new non-invasive empirical method for compact electrothermal modeling and thermal resistance extraction is also described. The new contribution of the proposed approach concerns the non linear dependence of the channel temperature on the dissipated power. This is very important for GaN devices since they are capable of operating at relatively high temperatures with high power densities and the dependence of the thermal resistance on the temperature is quite relevant. Finally a novel method for the device thermal simulation is investigated: based on the analytical solution of the tree-dimensional heat equation, a Visual Basic program has been developed to estimate, in real time, the temperature distribution on the hottest surface of planar multilayer structures. The developed solver is particularly useful for peak temperature estimation at the design stage when critical decisions about circuit design and packaging have to be made. It facilitates the layout optimization and reliability improvement, allowing the correct choice of the device geometry and configuration to achieve the best possible thermal performance.