Structure, Dynamics and Reactivity in the Organic Solid State: Anthracene Derivatives and Charge Transfer Crystals

The work presented in this thesis tackles some important points concerning the collective properties of two typical categories of molecular crystals, i.e., anthracene derivatives and charge transfer crystals. Anthracene derivatives have constituted the class of materials from which systematical investigations of crystal-to-crystal photodimerization reactions started, developed and have been the subject of a new awakening in the recent years. In this work some of these compounds, namely, 9-cyanoanthacene, 9-anthacenecarboxylic acid and 9-methylanthracene, have been selected as model systems for a phenomenological approach to some key properties of the solid state, investigated by spectroscopic methods. The present results show that, on the basis of the solid state organization and the chemical nature of each compound, photo-reaction dynamics and kinetics display distinctive behaviors, which allows for a classification of the various processes in topochemical, non topochemical, reversible or topophysical. The second part of the thesis was focused on charge transfer crystals, binary systems formed by stoichiometric combinations of the charge donating perylene (D) and the charge accepting tetracyano-quinodimethane (A), this latter also in its fluorinated derivatives. The work was focused on the growth of single crystals, some of which not yet reported in the literature, by PVT technique. Structural and spectroscopic characterizations have been performed, with the aim of determining the degree of charge transfer between donor and acceptor in the co-crystals. An interesting outcome of the systematic search performed in this work is the definition of the experimental conditions which drive the crystal growth of the binary systems either towards the low (1:1) or the high ratio (3:1 or 3:2) stoichiometries.

Crystal Engineering of bright luminescent copper iodide clusters with phosphorus and nitrogen-based ligands

Copper(I) halide clusters are recently considered as good candidate for optoelectronic devices such as OLEDs . Although the copper halide clusters, in particular copper iodide, are very well known since the beginning of the 20th century, only in the late ‘70s the interest on these compounds grew dramatically due their particular photophysical behaviour. These complexes are characterized by a dual triplet emission bands, named Cluster Centred (3CC) and Halogen-to-Ligand charge transfer (3XLCT), the intensities of which are strictly related with the temperature. The CC transition, due to the presence of a metallophylic interactions, is prevalent at ambient temperature while the XLCT transition, located preferentially on the ligand part, became more prominent at low temperature. Since these pioneering works, it was easy to understand the photophysical properties of this compounds became more interesting in solid-state respect to solution with an improvement in emission efficiency. In this work we aim to characterize in SS organocopper(I)iodide compounds to valuate the correlation between the molecular crystal structure and the photophysical properties. It is also considered to hike new strategies to synthesize CuI complexes from the wet reactions to the more green solvent free methods. The advantages in using these strategies are evident but, obtain a single crystal suitable for SCXRD analysis from these batches is quite impossible. The structure solution still remains the key point in this research so we tackle this problem solving the structure by X-ray powder diffraction data. When the sample was fully characterized we moved to design and development of the associated OLED-device. Since copper iodide complexes are often insoluble in organic solvents, the high vacuum deposition technique is preferred. A new non-conventional deposition process have also been proposed to avoid the low complex stability in this practice with an in-situ complex formation in a layer-by layer deposition route.

Determinazione di radicali OH: sintesi di materiali per la modifica di elettrodi di platino e carbone vetroso

Questa tesi descrive lo sviluppo di un elettrodo modificato con un polimero isolante per la determinazione indiretta del radicale OH. I polimeri testati sono stati polifenolo, polipirrolo e polipirrolo sovraoossidato ed il primo è risultato quello con le migliori prestazioni. Il film di modificante è stato depositato per elettropolimerizzazione del fenolo in ambiente acido, su un elettrodo di carbone vetroso (GC) ed è risultato isolante e perfettamente adeso al GC, impedendo il trasferimento di carica alle più comuni sonde redox. L’attacco dei radicali OH, generati dalla reazione di Fenton o dalla fotolisi di H2O2, rimuove parzialmente il polimero dal GC, ripristinando parzialmente il comportamento conduttore dell’elettrodo. L’entità della degradazione del film polifenolico è stata valutata sfruttando la corrente relativa alla sonda redox Ru(NH3)63+, che rappresenta il segnale analitico per la determinazione del radicale OH. L’elettrodo è stato impiegato per stimare le prestazioni di foto catalizzatori a base di nanoparticelle di TiO2, ottenendo risultati correlati a quelli ricavati da un metodo HPLC. Inoltre esso è stato usato per sviluppare una nuova procedura per la determinazione della capacità di scavenging verso i radicali OH, che è stata applicata all’analisi di composti puri e campioni reali. I risultati erano confrontabili con quelli determinati con metodiche standardizzate, comunemente impiegate per la determinazione della capacità antiossidante. Inoltre è stato condotto uno studio riguardante la modifica di un elettrodo di platino con un idrossido misto a strati a base di cobalto e alluminio (LDH). In particolare si sono valutati gli effetti di diversi pretrattamenti del Pt sulle caratteristiche e prestazioni elettrocatalitiche del film di LDH nei confronti dell’ossidazione di anilina, fenolo e acido salicilico. Questi composti possono essere impiegati come molecole sonda per la determinazione del radicale OH e rivestono interesse da un punto di vista elettroanalitico perché portano facilmente alla passivazione della superficie di Pt.

Simulation of Smart Materials

The aim of this thesis is the elucidation of structure-properties relationship of molecular semiconductors for electronic devices. This involves the use of a comprehensive set of simulation techniques, ranging from quantum-mechanical to numerical stochastic methods, and also the development of ad-hoc computational tools. In more detail, the research activity regarded two main topics: the study of electronic properties and structural behaviour of liquid crystalline (LC) materials based on functionalised oligo(p-phenyleneethynylene) (OPE), and the investigation on the electric field effect associated to OFET operation on pentacene thin film stability. In this dissertation, a novel family of substituted OPE liquid crystals with applications in stimuli-responsive materials is presented. In more detail, simulations can not only provide evidence for the characterization of the liquid crystalline phases of different OPEs, but elucidate the role of charge transfer states in donor-acceptor LCs containing an endohedral metallofullerene moiety. Such systems can be regarded as promising candidates for organic photovoltaics. Furthermore, exciton dynamics simulations are performed as a way to obtain additional information about the degree of order in OPE columnar phases. Finally, ab initio and molecular mechanics simulations are used to investigate the influence of an applied electric field on pentacene reactivity and stability. The reaction path of pentacene thermal dimerization in the presence of an external electric field is investigated; the results can be related to the fatigue effect observed in OFETs, that show significant performance degradation even in the absence of external agents. In addition to this, the effect of the gate voltage on a pentacene monolayer are simulated, and the results are then compared to X-ray diffraction measurements performed for the first time on operating OFETs.