Biomimetica per l'ingegneria tissutale dell'osso

Reconstruction of bone is needed for high bone loss due to congenital deformities, trauma or neoplastic diseases. Commonly, orthopaedic surgical treatments are autologus or allogenic bone implant or prosthetic implant. A choice to the traditional approaches could be represented by tissue engineering that use cells (and/or their products) and innovative biomaterials to perform bone substitutes biologically active as an alternative to artificial devices. In the last years, there was a wide improvement in biology on stem cells potential research and in biomedical engineering through development of new biomaterials designed to resemble the physiological tissues. Tissue engineering strategies and smart materials aim together to stimulate in vivo bone regeneration. This approaches drive at restore not only structure integrity and/or function of the original tissue, but also to induce new tissue deposition in situ. An intelligent bone substitute is now designed like not only a scaffold but also as carrier of regeneration biomolecular signals. Biomimetics has helped to project new tissue engineered devices to simulate the physiological substrates architecture, such extracellular matrix (ECM), and molecular signals that drive the integration at the interface between pre-existing tissue and scaffold. Biomimetic strategies want to increase the material surface biological activity with physical modifications (topography) o chemical ones (adhesive peptides), to improve cell adhesion to material surface and possibly scaffold colonization. This study evaluated the effects of biomimetic modifications of surgical materials surface, as poly-caprolattone (PCL) and titanium on bone stem cells behaviour in a marrow experimental model in vitro. Two biomimetic strategies were analyzed; ione beam irradiation, that changes the surface roughness at the nanoscale, and surface functionalization with specific adhesive peptides or Self Assembled Monolayers (SAMs). These new concept could be a mean to improve the early (cell adhesion, spreading..) and late phases (osteoblast differentiation) of cell/substrate interactions.

Electrothermal characterization and nonlinear modelling of GaN transistors for telecommunication circuit design

This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on an equivalent voltage approach, a new low frequency device model is presented where the dynamic nonlinearity of the trapping effect is taken into account for the first time allowing considerable improvements in the prediction of very important quantities for the design of power amplifier such as power added efficiency, dissipated power and internal device temperature. An innovative and low-cost measurement setup for the characterization of the device under low-frequency large-amplitude sinusoidal excitation is also presented. This setup allows the identification of the new low frequency model through suitable procedures explained in detail. In this thesis a new non-invasive empirical method for compact electrothermal modeling and thermal resistance extraction is also described. The new contribution of the proposed approach concerns the non linear dependence of the channel temperature on the dissipated power. This is very important for GaN devices since they are capable of operating at relatively high temperatures with high power densities and the dependence of the thermal resistance on the temperature is quite relevant. Finally a novel method for the device thermal simulation is investigated: based on the analytical solution of the tree-dimensional heat equation, a Visual Basic program has been developed to estimate, in real time, the temperature distribution on the hottest surface of planar multilayer structures. The developed solver is particularly useful for peak temperature estimation at the design stage when critical decisions about circuit design and packaging have to be made. It facilitates the layout optimization and reliability improvement, allowing the correct choice of the device geometry and configuration to achieve the best possible thermal performance.

Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.

Studio degli effetti della mordenzatura con acido fluoridrico sul disilicato di litio utilizzato in odontoiatria

Scopo dello studio: valutare i cambiamenti indotti da diversi trattamenti di mordenzatura sulla morfologia superficiale e sulla microstruttura di due vetro-ceramiche a base disilicato di litio (IPS e.max® Press e IPS e.max® CAD) ed esaminarne gli effetti sia sull’adesione con un cemento resinoso che sulla resistenza alla flessione. Materiali e metodi: Settanta dischetti (12 mm di diametro, 2 mm di spessore) di ogni ceramica sono stati preparati e divisi in 5 gruppi: nessun trattamento (G1), HF 5% 20s (G2), HF 5% 60s (G3), HF 9.6% 20s (G4), HF 9.6% 60s (G5). Un campione per ogni gruppo è stato analizzato mediante profilometro ottico e osservato al SEM. Per gli altri campioni è stato determinato lo shear bond strength (SBS) con un cemento resinoso. Dopo l’SBS test, i campioni sono stati caricati fino a frattura utilizzando il piston-on-three-ball test per determinarne la resistenza biassiale alla flessione. Risultati: L’analisi morfologica e microstrutturale dei campioni ha rivelato come diversi trattamenti di mordenzatura producano delle modifiche nella rugosità superficiale che non sono direttamente collegate ad un aumento dei valori di adesione e dei cambiamenti microstrutturali che sono più rilevanti con l’aumento del tempo di mordenzatura e di concentrazione dell’acido. I valori medi di adesione (MPa) per IPS e.max® CAD sono significativamente più alti in G2 e G3 (21,28 +/- 4,9 e 19,55 +/- 5,41 rispettivamente); per IPS e.max® Press, i valori più elevati sono in G3 (16,80 +/- 3,96). La resistenza biassiale alla flessione media (MPa) è più alta in IPS e.max® CAD (695 +/- 161) che in IPS e.max® Press (588 +/- 117), ma non è non influenzata dalla mordenzatura con HF. Conclusioni: il disilicato di litio va mordenzato preferibilmente con HF al 5%. La mordenzatura produce alcuni cambiamenti superficiali e microstrutturali nel materiale, ma tali cambiamenti non ne influenzano la resistenza in flessione.