Toward a Magnitude Scale for Low Frequency Seismicity The LP energy for Campi Flegrei caldera

The energy released during a seismic crisis in volcanic areas is strictly related to the physical processes in the volcanic structure. In particular Long Period seismicity, that seems to be related to the oscillation of a fluid-filled crack (Chouet , 1996, Chouet, 2003, McNutt, 2005), can precedes or accompanies an eruption. The present doctoral thesis is focused on the study of the LP seismicity recorded in the Campi Flegrei volcano (Campania, Italy) during the October 2006 crisis. Campi Flegrei Caldera is an active caldera; the combination of an active magmatic system and a dense populated area make the Campi Flegrei a critical volcano. The source dynamic of LP seismicity is thought to be very different from the other kind of seismicity ( Tectonic or Volcano Tectonic): it’s characterized by a time sustained source and a low content in frequency. This features implies that the duration–magnitude, that is commonly used for VT events and sometimes for LPs as well, is unadapted for LP magnitude evaluation. The main goal of this doctoral work was to develop a method for the determination of the magnitude for the LP seismicity; it’s based on the comparison of the energy of VT event and LP event, linking the energy to the VT moment magnitude. So the magnitude of the LP event would be the moment magnitude of a VT event with the same energy of the LP. We applied this method to the LP data-set recorded at Campi Flegrei caldera in 2006, to an LP data-set of Colima volcano recorded in 2005 – 2006 and for an event recorded at Etna volcano. Experimenting this method to lots of waveforms recorded at different volcanoes we tested its easy applicability and consequently its usefulness in the routinely and in the quasi-real time work of a volcanological observatory.

In-situ and real time scanning probe microscopy of organic ultra thin films

In recent decades, Organic Thin Film Transistors (OTFTs) have attracted lots of interest due to their low cost, large area and flexible properties which have brought them to be considered the building blocks of the future organic electronics. Experimentally, devices based on the same organic material deposited in different ways, i.e. by varying the deposition rate of the molecules, show different electrical performance. As predicted theoretically, this is due to the speed and rate by which charge carriers can be transported by hopping in organic thin films, transport that depends on the molecular arrangement of the molecules. This strongly suggests a correlation between the morphology of the organic semiconductor and the performance of the OTFT and hence motivated us to carry out an in-situ real time SPM study of organic semiconductor growth as an almost unprecedent experiment with the aim to fully describe the morphological evolution of the ultra-thin film and find the relevant morphological parameters affecting the OTFT electrical response. For the case of 6T on silicon oxide, we have shown that the growth mechanism is 2D+3D, with a roughening transition at the third layer and a rapid roughening. Relevant morphological parameters have been extracted by the AFM images. We also developed an original mathematical model to estimate theoretically and more accurately than before, the capacitance of an EFM tip in front of a metallic substrate. Finally, we obtained Ultra High Vacuum (UHV) AFM images of 6T at lying molecules layer both on silicon oxide and on top of 6T islands. Moreover, we performed ex-situ AFM imaging on a bilayer film composed of pentacene (a p-type semiconductor) and C60 (an n-type semiconductor).