2 resultados para [JEL:I21] Health, Education, and Welfare - Education - Analysis of Education
em Universidade Federal do Pará
Resumo:
This work studied a new protocol for organogenic calli induction and characterization of the morphology and ultrastructure of callogenesis in leaf explants of Passiflora gibertii N. E. Brown, a native passion fruit species from Brazil. Calli induction was performed in different growth conditions (light and dark), different MS medium salt concentrations (MS and MS half strength) and the presence or absence of coconut water. The leaf explants maintained in the dark were more responsive to bud formation. In order to reduce spending on in vitro culture, the most suitable induction medium for P. gibertii organogenesis could, therefore be the MS half strength salt concentration medium maintained in the dark. The addition of coconut water to the culture medium was essential for both calli induction and bud formation. The morphological and ultrastructural features of the organogenic calli were isodiametric cells, characterized by an organized cellular system, nucleus with prominent nucleoli, presence of starch grains and dense cytoplasm rich in endoplasmic reticulum. The scanning electron microscopy demonstrated that buds were present on these calli.
Resumo:
The pristine boron nitride nanotubes have a large direct band gap around 5 eV. This band gap can be engineered by doping. We investigate electronic structure of the doped hexagonal boron nitride (5,5) nanotubes using the linearized augmented cylindrical wave method. In particular, this work focuses on systematical study of the band gap and the density of states around the Fermi-level when the nanotubes are doped by intrinsic impurities of two substitutional boron atoms in a super cell and a comparative analysis of the relative stability of three structures studied here. This corresponds to 3.3% of impurity concentration. We calculate 29 configurations of the nanotubes with different positions of the intrinsic impurities in the nanotube. The band gap and density of states around the Fermi level show strong dependence on the relative positions of the impurity atoms. The two defect sub bands called D∏(B) appear in the band gap of the pristine nanotube. The doped nanotubes possess p-type semiconductor properties with the band gap of 1.3-1.9 eV.