Photoluminescence of barium titanate and barium zirconate in multilayer disordered thin films at room temperature

The emission of wide band photoluminescence showed a synergic effect on barium zirconate and barium titanate thin films in alternate multilayer system at room temperature by 488 nm exiting wavelength. The thin films obtained by spin-coating were annealed at 350, 450, and 550 degrees C for 2 h. The X-ray patterns revealed the complete separation among the BaTiO3 and BaZrO3 phases in the adjacent films. Visible and intense photoluminescence was governed by BaZrO3 thin films in the multilayer system. Quantum mechanics calculations were used in order to simulate ordered and disordered thin films structures. The disordered models, which were built by using the displacement of formers and modifier networks, showed a different symmetry in each system, which is in accordance with experimental photoluminescence emission, thus allowing to establish a correlation among the structural and optical properties of these multilayered systems.

Estudo da decomposição térmica de oxalato de estrôncio dopado com cério(III) como precursor de materiais luminescentes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence of nanostructured PbTiO3 processed by high-energy mechanical milling

This letter reports on a process to prepare nanostructured PbTiO3 (PT) at room temperature with photoluminescence (PL) emission in the visible range. This process is based on the high-energy mechanical milling of ultrafine PbTiO3 powder. The results suggest that high-energy mechanical milling modifies the particle's structure, resulting in localized states in an interfacial region between the crystalline PT and the amorphous PT. These localized states are believed to be responsible for the PL obtained with short milling times. When long milling times are employed, the amorphous phase that is formed causes PL behavior. An alternative method to process nanostructured wide-band-gap semiconductors with active optical properties such as PL is described in this letter. (C) 2001 American Institute of Physics.

Highly intense violet-blue light emission at room temperature in structurally disordered SrZrO3 powders

Violet-blue photoluminescence was produced at room temperature in a structurally disordered SrZrO3 perovskite structure with a 350.7 nm excitation line. The intensity of this emission was higher than that of any other perovskites previously studied. The authors discuss the role of structural order-disorder that favors the self-trapping of electrons and charge transference, as well as a model to elucidate the mechanism that triggers photoluminescence. In this model the wide band model, the most important events occur before excitation. (c) 2007 American Institute of Physics.

Photo-induced transformations in chalcogenide composite layers

Investigations of photo-induced structural transformations (PST) and related changes of optical parameters in the light-sensitive amorphous chalcogenides were extended to composite layers, which consist of a wide band-gap material and an active material, Se60Te40 with a smaller band gap. Photo-stimulated interdiffusion and/or crystallization in layered Se0.6Tc0.4/As0.6Se0.94 and Se0.6Te0.4/SiOx were investigated with respect to their dependence on the compositional modulation of the multilayer at scale-dimensions (similar to3-10nm). It was established that PST due to the interdiffusion and crystallization can be efficiently operated by the composition of the adjacent layers of the multilayer which results in the change of the transformation rate and of the optical relief type (positive or negative). The comparison with a single Se0.6Te0.4 layer and with the known data for amorphous-Se/As2S3 multilayers supports the advantages of composite layers for amplitude-phase optical recording. (C) 2004 Published by Elsevier B.V.

Ferroelectric materials with photoluminescent properties

Amorphous LiNbO3 thin films processed by polymeric precursor method exhibited efficient luminescence at room temperature. The films were deposited on silicon substrates and treated at 200degreesC for different times. The photoluminescence emission yield decreases with the increase of the treatment time and disappears for crystalline films. A theoretical-experimental study was performed on amorphous and crystalline materials to understand the influence of the defects on the photoluminescence properties. The theoretical band gap obtained by the difference of energy between the HOMO and LUMO levels is larger for crystalline structure when compared with amorphous material. This result, which is in agreement with experimental band gaps obtained from optical measurements, revealed the emergence of new electronic levels for the amorphous material, which are localized in the wide band gap of the crystalline structure. These new electronic levels may explain the photoluminescence observed at room temperature for LiNbO3 amorphous films.

Structural refinement, growth process, photoluminescence and photocatalytic properties of (Ba1-xPr2x/3)WO4 crystals synthesized by the coprecipitation method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

Structural Health Monitoring based on AR models and PZT sensors

This paper presents a new approach for damage detection in Structural Health Monitoring (SHM) systems, which is based on the Electromechanical Impedance (EMI) principle and Autoregressive (AR) models. Typical applications of EMI in SHM are based on computing the Frequency Response Function (FRF). In this work the procedure is based on the EMI principle but the results are determined through the coefficients of AR models, which are computed from the time response of PZT transducers bonded to the monitored structure, and acting as actuator and sensors at the same time. The procedure is based on exciting the PZT transducers using a wide band chirp signal and getting its time response. The AR models are obtained in both healthy and damaged conditions and used to compute statistics indexes. Practical tests were carried out in an aluminum plate and the results have demonstrated the effectiveness of the proposed method. © 2012 IEEE.

Damage Detection Based on Electromechanical Impedance Principle and Principal Components

This paper presents a novel time domain approach for Structural Health Monitoring (SHM) systems based on Electromechanical Impedance (EMI) principle and Principal Component Coefficients (PCC), also known as loadings. Differently of typical applications of EMI applied to SHM, which are based on computing the Frequency Response Function (FRF), in this work the procedure is based on the EMI principle but all analysis is conducted directly in time-domain. For this, the PCC are computed from the time response of PZT (Lead Zirconate Titanate) transducers bonded to the monitored structure, which act as actuator and sensor at the same time. The procedure is carried out exciting the PZT transducers using a wide band chirp signal and getting their time responses. The PCC are obtained in both healthy and damaged conditions and used to compute statistics indexes. Tests were carried out on an aircraft aluminum plate and the results have demonstrated the effectiveness of the proposed method making it an excellent approach for SHM applications. Finally, the results using EMI signals in both frequency and time responses are obtained and compared. © The Society for Experimental Mechanics 2014.

Desenvolvimento e otimização de materiais nanocristalinos para células solares sensibilizadas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A relationship between structural and electronic order-disorder effects and optical properties in crystalline TiO2 nanomaterials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Uso das ondas de Lamb e Scholte para caracterização de líquidos

Pós-graduação em Engenharia Elétrica - FEIS

Síntese e caracterização de materiais semicondutores nanoestruturados luminescentes à base de ZnS

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Refractive index changes in photochromic SbPO4-WO3 glass by exposure to band-gap radiation

We report photoinduced photo-darkening in SbPO4-WO3 glass by exposure to 532 nm light with a power density of 143 mW/cm(2). The time of exposure was varied between 0 and 256 min following which visible photo-darkening, peaking at 850 nm was observed. Spectrophotometer measurement of absorption was performed for both treated and untreated regions of the sample. Time exposure to below band-gap light results in a single exponent Gaussian absorption function over an exceptionally wide range of wavelengths (500 nm-1600 nm), with a 1/e width of 647.5 nm. Kramers-Kronig transform of the change in the absorption indicates a negative local change in the refractive index. The dispersed refractive index change at 1550 nm, Delta n, is calculated to be similar to -5 x 10(-8). The peak absorption increases with time of exposure and the photo-darkening remains irreversible at room temperature. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.