The effects of pinning on critical currents of superconducting films

Using molecular dynamics simulations, we analyze the effects of artificial periodic arrays of pinning sites on the critical current of superconducting thin films as a function of vortex density. We analyze two types of periodic pinning array: hexagonal and Kagomé. For the Kagome pinning network we make calculations using two directions of transport current: along and perpendicular to the main axis of the lattice. Our results show that the hexagonal pinning array presents higher critical currents than the Kagomé and random pinning configuration for all vortex densities. In addition, the Kagomé networks show anisotropy in their transport properties. © 2012 Springer Science+Business Media, LLC.

Role of interstitial pinning in the dynamical phases of vortices in superconducting films

We analyze the vortex dynamics in superconducting thin films with a periodic array of pinning centers. In particular, we study the effect of anisotropy for a Kagomé pinning network when longitudinal and transverse transport currents are applied. By solving the equations of motion for the vortex array numerically at zero temperature, we find different phases for the vortex dynamics, depending on the pinning and driving force. An unusual sequence of peaks for driving force along and perpendicular to the main lattice axes is observed for the differential resistance, reflecting the anisotropy of the transport properties and the complex behavior of the vortex system. This behavior may be understood in terms of interstitial pinning vacancies, which create channels of vortices with different pinning strengths. © 2012 Springer Science+Business Media, LLC.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.