Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

An active leakage-injection scheme applied to low-voltage SRAMs

An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of μA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256×1bit array was designed in accordance with a 0.35 CMOS process and 1.2V-supply. A range of PSPICE simulation attests the efficacy of ALIS. With an extra power consumption of 242 μW, a 200 μA-leakage @125°C, corresponding to 13.6 times the cell current, is compensated.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

Preparação e caracterização de filmes finos de 'BA''BI IND.2''TA IND.2''O IND.9(BBT)' e 'BA''BI IND.2''NB IND.2''O IND.9(BBN)'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

THE RATE of FORCE DEVELOPMENT OBTAINED AT EARLY CONTRACTION PHASE IS NOT INFLUENCED BY ACTIVE STATIC STRETCHING

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fermi acceleration with memory-dependent excitation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Desempenho ortográfico de escolares do 2º ao 5º ano: proposta de elaboração de um protocolo de avaliação da ortografia

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise da estabilidade estática de tensão de sistemas elétricos de potência usando uma rede neural baseada na teoria da ressonância adaptativa

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Novas técnicas de detecção de fase óptica em interferômetros homódinos aplicadas à caracterização de atuadores piezoelétricos flextensionais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A influência do alongamento prévio no pico de torque e na taxa de desenvolvimento de força

The objective of this study was to investigate the influence of previous active static stretch on the peak torque (PT) and rate of force development (TDF) during isokinetic concentric contractions at 60 and 180.s-1 in active individuals. Twelve active subjects with ages between 18 and 30 years participated of this study. The individuals were submitted in different days to the following tests: 1) Familiarization session to the isokinetic dynamometer; 2) Five maximal isokinetic concentric contractions for knee extensors at each angular velocity (60 and 180.s-1) to determine PT and TDF (Control), and; 3) Two active static stretching exercises for the dominant leg extensors (10 x 30 s for each exercise, with 20 s of rest). After the stretching, the isokinetic test was repeated (Post-Stretching). The conditions 2 and 3 were performed in random order. There was no significant modification after the stretch exercises on the PT, angle and time at which the PT was attained, at 60 and 180º.s-1. In the same way, there was no significant modification on the TDF and angle at which the maximal TDF was attained in both angular speeds. In other way, the time to attain maximal TDF (TTDF) at 180º.s-1 was significantly lower after the stretching (Pre - 98.3 ± 27.5 ms and Post - 86.6 ± 30.2 ms). There was significant modification on the torque (60 and 180º.s-1) and time (60º.s-1) at different delta of angle variations, obtained at 60º.s-1 at Control and Post-Stretching conditions. However, there was significant reduction of time after the stretching exercises on delta of angle variations of 90-88º (Pre - 46.6 ± 6.5 ms and Post - 44.1 ± 5.1 ms), 88-85º (Pre - 65.8 ± 7.9 ms and Post - 63.3 ± 4.9 ms) and 85-80º (Pre - 93.3 ± 7.7 ms and Post - 90.0 ± 4.2 ms) at 180º.s-1. With base on these data, it is possible to conclude that PT and TDF do not modify after static stretching, irrespectively on the speed...(Complete abstract click electronic access below)

Diffusive random laser modes under a spatiotemporal scope

At present the prediction and characterization of the emission output of a diffusive random laser remains a challenge, despite the variety of investigated materials and theoretical interpretations given up to now. Here, a new mode selection method, based on spatial filtering and ultrafast detection, which allows to separate individual lasing modes and follow their temporal evolution is presented. In particular, the work explores the random laser behavior of a ground powder of an organic-inorganic hybrid compound based on Rhodamine B incorporated into a di-ureasil host. The experimental approach gives direct access to the mode structure and dynamics, shows clear modal relaxation oscillations, and illustrates the lasing modes stochastic behavior of this diffusive scattering system. The effect of the excitation energy on its modal density is also investigated. Finally, imaging measurements reveal the dominant role of diffusion over amplification processes in this kind of unconventional lasers. (C) 2015 Optical Society of America