Antioxidant Properties of Plant Extracts: an EPR and DFT Comparative Study of the Reaction with DPPH, TEMPOL and Spin Trap DMPO

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Origin of spin incommensurability in hole-doped S=1 Y2-xCaxBaNiO5 chains

Spin incommensurability (IC) has been recently experimentally discovered in the hole-doped Ni-oxide chain compound Y2-xCaxBaNiO5 [G. Xu et al., Science 289, 419 (2000)]. Here a two orbital model for this material is studied using computational techniques. Spin IC is observed in a wide range of densities and couplings. The phenomenon originates in antiferromagnetic correlations across holes dynamically generated to improve hole movement, as it occurs in the one-dimensional Hubbard model and in recent studies of the two-dimensional extended t-J model. The close proximity of ferromagnetic and phase-separated states in parameter space is also discussed.

Self-trapping of a Fermi superfluid in a double-well potential in the Bose-Einstein-condensate-unitarity crossover

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Self-trapping of Fermi and Bose gases under spatially modulated repulsive nonlinearity and transverse confinement

We show that self-localized ground states can be created in the spin-balanced gas of fermions with repulsion between the spin components, whose strength grows from the center to periphery, in combination with the harmonic-oscillator (HO) trapping potential acting in one or two transverse directions. We also consider the ground state in the noninteracting Fermi gas under the action of the spatially growing tightness of the one- or two-dimensional (1D or 2D) HO confinement. These settings are considered in the framework of the Thomas-Fermi-von Weizsäcker (TF-vW) density functional. It is found that the vW correction to the simple TF approximation (the gradient term) is nearly negligible in all situations. The properties of the ground state under the action of the 2D and 1D HO confinement with the tightness growing in the transverse directions are investigated too for the Bose-Einstein condensate with the self-repulsive nonlinearity. © 2013 American Physical Society.

Técnicas avançadas para caracterização de processos de transporte dependente do Spin

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

On the origin of exciton formation in dye doped Alq(3) OLEDs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Rare earth centers properties and electron trapping in SnO2 thin films produced by sol-gel route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electron spin resonance of Gd3+ in the antiferromagnetic heavy fermion CeIn3 and its reference compound LaIn3

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Magnetic interactions and spin-reversal mechanism in ErMn1-xCoxO3-delta samples

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fast optical preparation, control, and readout of a single quantum dot spin

We propose and demonstrate the sequential initialization, optical control, and readout of a single spin trapped in a semiconductor quantum dot. Hole spin preparation is achieved through ionization of a resonantly excited electron-hole pair. Optical control is observed as a coherent Rabi rotation between the hole and charged-exciton states, which is conditional on the initial hole spin state. The spin-selective creation of the charged exciton provides a photocurrent readout of the hole spin state.

Incommensurate spin-density-wave and metal-insulator transition in the one-dimensional periodic Anderson model

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Changing inter-molecular spin-orbital coupling for generating magnetic field effects in phosphorescent organic semiconductors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photo-induced electron trapping in indirect bandgap AlxGa1-xAs : Si at low temperature

A variation of photoconductivity excitation with wavelength is applied to Si-doped Al0.56Ga0.44As (indirect bandgap material) for a wide range of temperature. The lower the temperature the lower the photocurrent below 70 K. In the range 13-30 K there is a decrease in the photoconductivity spectrum slightly above the bandgap transition energy, followed by another increase in the conductivity. We interpret these results in the light of existing models and confirm the trapping by the X-valley effective mass state. which is responsible for attenuation of persistent photoconductivity below 70 K. A DX0 intermediate state which has non-negligible lifetime is proposed as responsible for the decrease in the photoconductivity with about 561 nm of wavelength of exciting light, in the investigated 13-30 g range.

The peremptory influence of a uniform background for trapping neutral fermions with an inversely linear potential

The problem of neutral fermions subject to an inversely linear potential is revisited. It is shown that an infinite set of bound-state solutions can be found on the condition that the fermion is embedded in an additional uniform background potential. An apparent paradox concerning the uncertainty principle is solved by introducing the concept of effective Compton wavelength.