8 resultados para simulation result

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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This paper discusses the importance of the voltage referential for power quality monitoring and power systempsilas instrumentation. Considering the operating conditions of simple power circuits, it will be demonstrated that an incorrect choice of the voltages referential may result in erroneous quantification of some power quality indices, especially in three-phase four wire circuits. The use of a virtual reference point and the neutral conductor as reference have been considered and the simulation results confirm the influence of the voltage reference selection in the evaluation of total harmonic distortion, unbalance factors and voltage sags. Finally a way of linking both methods will be discussed by means of Blakesleypsilas theorem. © Copyright 2010 IEEE - All Rights Reserved.

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This paper presents possible selective current compensation strategies based on the Conservative Power Theory (CPT). This recently proposed theory, introduces the concept of complex power conservation under non-sinusoidal conditions. Moreover, the related current decompositions results in several current terms, which are associated with a specific physical phenomena (power absorption P, energy storage Q, voltage and current distortion D). Such current components are used in this work for the definition of different current compensators, which can be selective in terms of minimizing particular disturbing effects. The choice of one or other current component for compensation directly affects the sizing and cost of active and/or passive devices and it will be demonstrated that it can be done to attend predefined limits for harmonic distortion, unbalances and/or power factor. Single-phase compensation strategies will be discussed by means of the CPT and simulation results will demonstrate their performance. © 2009 IEEE.

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The design of full programmable type-2 membership function circuit is presented in this paper. This circuit is used to implement the fuzzifier block of Type-2 Fuzzy Logic Controller chip. In this paper the type-2 fuzzy set was obtained by blurring the width of the type-1 fuzzy set. This circuit allows programming the height and the shape of the membership function. It operates in current mode, with supply voltage of 3.3V. The simulation results of interval type-2 membership function circuit have been done in CMOS 0.35μm technology using Mentor Graphics software. © 2011 IEEE.

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This paper presents a careful evaluation among the most usual MPPT techniques, doing meaningful comparisons with respect to the amount of energy extracted from the photovoltaic (PV) panel, PV voltage ripple, dynamic response and use of sensors, considering that the models are first implemented via MatLab/Simulink®, and after a digitally controlled boost DC-DC converter was implemented and connected to an Agilent Solar Array simulator in order to verify the simulation results. The prototype was built, the algorithms are digitally developed and the main experimental results are also presented, including dynamic responses and the experimental tracking factor (TF) for the analyzed MPPT techniques. © 2011 IEEE.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating objects with irregular geometry without complex manipulation of the target holder. The effectiveness of this approach relies on the uniformity of the incident ion dose. Unfortunately, perfect dose uniformity is usually difficult to achieve when treating samples of complex shape. The problems arise from the non-uniform plasma density and expansion of plasma sheath. A particle-in-cell computer simulation is used to study the time-dependent evolution of the plasma sheath surrounding two-dimensional objects during process of plasma immersion ion implantation. Before starting the implantation phase, steady-state nitrogen plasma is established inside the simulation volume by using ionization of gas precursor with primary electrons. The plasma self-consistently evolves to a non-uniform density distribution, which is used as initial density distribution for the implantation phase. As a result, we can obtain a more realistic description of the plasma sheath expansion and dynamics. Ion current density on the target, average impact energy, and trajectories of the implanted ions were calculated for three geometrical shapes. Large deviations from the uniform dose distribution have been observed for targets with irregular shapes. In addition, effect of secondary electron emission has been included in our simulation and no qualitative modifications to the sheath dynamics have been noticed. However, the energetic secondary electrons change drastically the plasma net balance and also pose significant X-ray hazard. Finally, an axial magnetic field has been added to the calculations and the possibility for magnetic insulation of secondary electrons has been proven.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)