6 resultados para semiconductor lasers

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.

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Bright fluorescence in the visible range has been observed in Pr3+-Yb3+ doped fluoroindate glass under infrared diode laser irradiation. The mechanism which contributes for the upconversion emission is identified and the energy transfer rate between Pr3+-Yb3+ is obtained for different concentrations. © 1998 Elsevier Science B.V. All rights reserved.

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We report the observation of cooperative frequency upconversion in a fluoroindate glass. The experiments were performed by exciting Yb3+-Tb3+ codoped samples with an infrared diode laser. The process is monitored through the green fluorescence emitted by Tb3+ ions due to a cooperative energy transfer from a pair of excited Yb3+ ions. © 1998 Elsevier Science B.V. All rights reserved.

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Blue, green, red, and near-infrared upconversion luminescence in the wavelength region of 480 - 740 nm in Pr3+/Yb3+-codoped lead-cadmium-germanate glass under 980 nm diode laser excitation, is presented. Upconversion emission peaks around 485, 530, 610, 645, and 725 nm which were ascribed to the 3P0 - 3HJ (J=4, 5, and 6), and 3P0 - 3FJ (J=2, and 3,4), transitions, respectively, were observed. The population of the praseodymium upper 3P0 emitting level was accomplished through a combination of ground-state absorption of Yb3+ ions at the 2F7/2, energy-transfer Yb3+(2F 5/2) Pr3+(3H4), and excited-state absorption of Pr3+ ions provoking the 1G4 - 3P0 transition. The dependence of the upconversion luminescence upon the Yb3+-concentration and diode laser power, is also examined, in order to subsidize the proposed upconversion excitation mechanism.

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The application of multi-wavelength holography for surface shape measurement is presented. In our holographic setup a Bi12TiO 20 (BTO) photorefractive crystal was the holographic recording medium and a multimode diode laser emitting in the red region was the light source in a two-wave mixing scheme. The holographic imaging with multimode lasers results in multiple holograms in the BTO. By employing such lasers the resulting holographic image appears covered of interference fringes corresponding to the object relief and the interferogram spatial frequency is proportional to the diode laser free spectral range (FSR). We used a Fabry-Perot étalon at the laser output for laser mode selection. Thus, larger effective values of the laser FSR were achieved, leading to higher-spatial frequency interferograms and therefore to more sensitive and accurate measurements. The quantitative evaluation of the interferograms was performed through the phase stepping technique (PST) and the phase map unwrapping was carried out through the Cellular-Automata method. For a given surface, shape measurements with different interferogram spatial frequencies were performed and compared, concerning measurement noise and visual inspection.

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Using pump-probe reflectometry, we study the ultrafast excited-state dynamics in thin films of BuPTCD, an organic semiconductor, deposited on gold nanoparticles. We observe depletion of the ground state and excited state absorption after photo-excitation. © 2008 Optical Society of America.