22 resultados para oven method

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Estudar o efeito da calagem e do método de secagem na produtividade do amendoim (Arachis hypogea L., cv. Botutatu) foi o objetivo deste trabalho, conduzido num solo Latossolo Vermelho-Escuro, textura média, em São Manuel, São Paulo. Os tratamentos consistiram de ausência ou presença de calagem (2,05 Mg ha-1) e secagem à sombra, ao sol e duas formas combinadas desta última com estufa. A calagem eliminou a fitotoxicidade de manganês, melhorando a nodulação e a nutrição nitrogenada, que, conseqüentemente, levaram ao aumento do número de ramificações, de vagens por planta e da produtividade. Com a calagem, observou-se também redução nas perdas durante a colheita. Das formas de secagem, a realizada à sombra e a combinada campo-estufa foram as que proporcionaram maiores produtividades, por permitirem melhor maturação dos frutos e menores perdas na colheita.

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The aim of this work was to characterize the yellow melon seeds, hybrid variety, as for their proximate composition, and to evaluate the antioxidant potential of extracts of seed in soybean oil. The extract of melon seeds (EM), obtained by extraction using ethanol: water (95:5), was applied in soybean oil at three different concentrations (500; 750 and 1000 mg kg(-1)) and submitted to Shaal oven method at 60 degrees C for 20 days. Oil samples were evaluated for peroxic a value in periods of five days. The antioxidant activity of the extract was compared to the BHT (butyl-hydroxytoluene) activity. The melon seeds showed a high nutrition value, containing high percentages of lipids (25.2%), proteins (20.1%) and fiber (30.0%). All these treatments retarded lipid oxidation in soybean oil; however the natural extracts were less effective than BHT after 10 days in the oven. The antioxidant activities of different treatments tested in this study followed the order: BHT > EM 1000 mg kg(-1) = EM 750 mg kg(-1) > EM 500 mg kg(-1)> control.

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SrBi4Ti4O15 (SBTi) thin films were obtained by the polymeric precursor method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional furnace at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent\polarization P-r and a coercive field E-c of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kV/cm for the film thermally treated in conventional furnace, respectively. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films can be a promise material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

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Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 degrees C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by Xray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P-r and a coercive field E-c values of 5.1 mu C/cm(2) and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 mu C/cm(2) and 85 kv/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10(10) switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories. (C) 2007 Elsevier B.V. All rights reserved.

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PbZr0.3Ti0.7O3 (PZT) films were produced by polymeric precursor route and deposited by spin-coater technique on Pt(111)/Ti/SiO2/Si(100) substrates. The films were heat-treated using different furnaces: (a) a conventional furnace, at 700 degrees C; and (b) a domestic microwave oven, at 600 degrees C. The X-ray patterns revealed that both films are single phase and reflections were identified as belongs to the PZT phase. The intensity of these reflections showed a (111), (001) and (100) preferred orientation. Morphological and electrical characterizations showed that all samples present a rather different microstructure and both with high spontaneous polarization.

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In this work, BSTSn powders prepared by the polymeric precursor method were heat treated in a domestic microwave oven (MW) using a SiC susceptor to absorb the microwave energy and transfer the heat to the powder. The main advantage of MW is to reduce the thermal treatment time for phase crystallization. The powders were heat treated at 300 degrees C for 20 h in conventional oven, 300 degrees C for 10 min, 20 min, and 30 min in MW and at 500 degrees C for 1 min in MW. After thermal treatment, the photoluminescent properties of powders at room temperature were analyzed. (c) 2007 Published by Elsevier B.V.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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SrBi2Nb2O9 thin films were produced by the polymeric precursor method using an aqueous solution. The crystallization of the films was carried out using a domestic microwave oven by means of a SiC susceptor in order to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are well-adhered, homogeneous and with good specularity, even when treated at 600 degreesC for 10 min. The microstructure and the structure of the films can be tuned by adjusting the crystallization conditions. Depending on the direction of the heat flux it is possible to obtain preferential oriented or polycrystalline films in the microwave oven for 10 min. The microstructure presented a polycrystalline nature with spheroid small mean grain size when the susceptor is placed above the substrate. When the susceptor is placed below the substrate, the films presented platelet grains with mean grain size around 250 nm and a 001 orientation. For comparison, films were also prepared by the conventional method at 700 degreesC for 2 h. (C) 2003 Elsevier Ltd. All rights reserved.

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In the present study. a spectrophotometric method for the determination of formaldehyde by using chromotropic acid was devised. in which the use of potentially hazardous and corrosive concentrated sulfuric acid was eliminated and advantageously C replaced by a mixture of H, concentrated H3PO4 and H2O2. The reaction between formaldehyde and chromotropic acid (CA) in a cone phosphoric acid medium was accelerate by irradiating the mixture with microwave energy for 35 s (1100 W), producing a violetred compound (lambda(max)=570 nm). Beer's Law is obeyed in a concentration range of 0.8-4.8 mg 1(-1) of formaldehyde with a good correlation coefficient (r = 0.9968). The proposed method was applied in the analysis of formaldehyde in commercial disinfectants. Recoveries were within 98.0-100.4%, with standard deviations ranging from 0.03 to 0.13%. (C) 2003 Elsevier B.V All rights reserved.

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Calcium plays a fundamental role in cell division and growth, and is an important constituent of the cell wall. An increase in Ca concentration in the tegument of peanut (Arachis hypogea L.) seeds in response to lime application can affect its structure. The tegument structure can also be affected by the drying method of the seeds. The effects of lime application and drying methods as affecting the peanut seed tegument structure were studied in seeds from a field experiment conducted in Sao Manuel, São Paulo, Brazil. Peanut (cv. Botutatu, Valencia Type) was grown in presence or absence of 2.1 Mg ha(-1) of lime and dried in an oven, in shade and in the field. The tegument anatomical features were described and its structure was analysed. Pectic substances, lipidic reserves and starch accumulation were studied. The peanut tegument exhibited well differentiated exotesta, mesotesta and endotesta rich in pectates and covered by a cuticle. Tannin was not observed but there was lipid accumulation in mature teguments. Lignin was observed in the vascular bundles. Lime increased the tegument thickness and decreased the central cavity mainly in the exotesta cells when the period of seed drying was shortened. The effect of drying method upon the tegument was more noticeable in seeds grown without lime. It can be inferred that liming increased the resistance of the tegument.

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Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO2/Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was, placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 degreesC for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 degreesC for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 muC/cm(2) and 27.5 kV/cm, respectively. When the films were crystallized at 700 degreesC for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 muC/cm(2) and 170 kV/cm, respectively. (C) 2003 Elsevier B.V. All rights reserved.

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Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

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SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.