Nonlinear electrical behaviour of the Cr2O3, ZnO, CoO and Ta2O5-doped SnO2 varistors

The effects of Cr2O3 on the properties of (Zn, Co, Ta)-doped SnO2 varistors were investigated in this study. The samples with different Cr2O3 concentrations were sintered at 1400 degrees C for 2 h. The properties of (Zn, Co, Ta, Cr)-doped SnO2 varistors were evaluated by XRD. dilatornetry, SEM, I-V and impedance spectroscopy. DC electrical characterization showed a dramatic increase ill the breakdown electrical field and in the nonlinear coefficient with the increase in Cr2O3 concentration. The grain size was found to decrease from 13 to 5 mu m with increasing the Cr2O3 content. The impedance data, represented by means of Nyquist diagrams, show two time constants, one at low frequencies and the other at high frequencies. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Dependence of La2O3 content on the nonlinear electrical behaviour of ZnO, CoO and Ta2O5 doped SnO2 varistors

The effects of La2O3 on the properties of (Zn, Co, Ta) doped SnO2 varistors were investigated in this study. The samples with different La2O3 concentrations were sintered at 1400 degrees C for 2 h and their properties were characterized by XRD, SEM, I-V and impedance spectroscopy. The grain size was found to decrease from 13 pm to 9 gm with increasing La2O3 content. The addition of rare earth element leads to increase the nonlinear coefficient and the breakdown voltage. The enhancement was expected to arise from the possible segregation of lanthanide ion due to its larger ionic radius to the grain boundaries, thereby modifying its electrical characteristics. Furthermore, the dopants such as La may help in the adsorption of O' to O '' at the grain boundaries characteristics. (c) 2006 Elsevier B.V. All rights reserved.

Dependence of the nonlinear electrical behavior of SnO2-based varistors on Cr2O3 addition

Tin dioxide varistors doped with Coo, ZnO, Ta2O5 and Cr2O3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. We show that Cr2O3 improves the varistor properties, generating sites for the adsorption of O' and O at the grain boundary region. The O' and O defects are truly responsible for the barrier formation at the grain boundary interface. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

On a nonlinear and chaotic non-ideal vibrating system with shape memory alloy (SMA)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electrical properties of the SnO2-based varistor

The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.

Some comments on the nonlinear dynamics of a portal frame under base excitation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Analysis of the Al-PANI interfaces by complex impedance spectroscopy

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Grain-boundary segregation and precipitates in La2O3 and Pr2O3 doped SnO2 center dot CoO-based varistors

Structural heterogeneities in SnO2.CoO-based varistors were analyzed by transmission electron microscopy. In SnO2.CoO-based system doped with La2O3 and Pr2O3 two kinds of precipitate phases at grain boundary region were found. Using energy dispersive spectrometry they were found to be Co2SnO4 and Pr2Sn2O7, presenting a defined crystalline structure. It was also identified that such precipitate phases are mainly located in triple-junctions of the microstructure. HRTEM analysis revealed the existence of other two types of junctions, one as being homo-junctions of SnO2 grains and other due to twin grain boundaries inside the SnO2.CoO grain. The role of these types of junction in the overall nonlinear electrical features is also discussed. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

The influence of aluminium on the overall properties of SnO2-based varistors

The influence of aluminium on the development of the microstructure and on the electrical behaviour of the SnO2 center dot Co3O4 center dot Nb2O5 typical varistor system was studied. Two sources of Al were used, alumina (Al2O3) and boehmite (AlO(OH)). The microstructural features were characterised with scanning (SEM) and transmission (TEM) electron microscopies. The different phases present in the studied samples were also studied with XRD, EDS and electron diffraction patterns of selected areas (SAED). Particles containing Sri, Co, Al, and O were unveiled with TEM. Impedance spectroscopy measurements and current density versus electric field characteristics revealed superior electrical properties for samples with AlO(OH). The higher non-linearity (alpha = 19) was achieved with the addition of 0.1% mol of boehmite. The influence of the secondary phases on the electrical properties is also addressed in this work.

PROCESSING AND CHARACTERIZATION OF LOW-VOLTAGE VARISTORS

ZnO seed particles and Cr2O3 were used in this study to control the microstructure of ZnO varistors. The seed particles were prepared by adding 1.0 mol % BaO to ZnO. The powder was then calcined at 800-degrees-C for 2 h, pressed into pellets and sintered at 1400-degrees-C for 8 h. The sintered ZnO was ground and the BaO eliminated by washing in water. The remaining ZnO powder was classified into a size fraction ranging from 38 to 149 mum. The addition of a small amount (1 weight %) ZnO seed grains produces varistors with low breakdown voltages (7.6 V/mm) and an alpha coefficient of approximately 10. The addition of Cr2O3 stabilizes the spinel phase yielding a more homogeneous microstructure, but degraded electrical behaviour of the ZnO varistor.

Sensitivity of SnO2 non-ohmic behavior to the sintering process and to the addition of La2O3

The work reported here consisted of a study of the sensitivity of the nonlinear electrical properties of dense SnO2. CoO ceramic systems to low concentrations of La2O3, sintering temperature and cooling rates. The nonlinear electrical properties of these systems were found to increase with decreasing cooling rates, a behavior attributed to the CoO solid state reactions at temperatures below 1000 degreesC. Post-annealing treatment in N-2-rich atmospheres strongly decreases the non-ohmic behavior of SnO2. CoO ceramic systems. However, this behavior may be restored through thermal treatment in an O-2-rich atmosphere. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 polycrystalline system

An investigation was made into the non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 perovskite-type system. Compared to the traditional CaCu3Ti4O12-based composition, the imbalance between the Ca and Cu atoms caused the formation of a polycrystalline system presenting similar to 33.3 mol % of CaCu3Ti4O12 (traditional composition) and similar to 66.7 mol % of CaTiO3. As for non-Ohmic properties, the effect of this Ca and Cu atom imbalance was that a nonlinear electric behavior of similar to 1500 was obtained. This high nonlinear electrical behavior emerged in detriment to the ultrahigh dielectric property frequently reported. The high non-Ohmic property was explained by the existence of Schottky-type barriers, whose formation mechanism may be similar to that proposed for traditional metal oxide non-Ohmic devices, according to similarities discussed herein. (c) 2006 American Institute of Physics.

The influence of the synthesis route on the final properties of SnO2-based varistors

A comparative study of two customary routes of ceramics processing applied to the synthesis of SnO2-based varistors is reported in this paper. Devices of equivalent composition were prepared through the Pechini method and through directly mixing the oxides without the addition of anti-agglomerants or binders. The microstructures of the sintered samples were characterised with X-ray diffraction and scanning and transmission electron microscopies. The electrical behaviour of the devices was studied on the basis of the current density versus electric field (J-E) characteristics and impedance spectroscopy measurements. The Pechini method ensures the homogeneity in the distribution of the additives in the tin oxide matrix but the formation of secondary phases seems to be independent of the synthesis route. Devices with similar non-linear coefficients of 18 and 21 were obtained through the mixed oxides route and the Pechini method, respectively. (C) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.