2 resultados para electron hopping

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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A series of powdered cobalt ferrites, CoxFe3-xO4 with 0.66 <= x< 1.00 containing different amounts of Fe-II, were synthesized by a mild procedure, and their Fe and Co site occupancies and structural characteristics were explored using X-ray anomalous scattering and the Rietveld refinement method. The dissolution kinetics, measured in 0.1 M oxalic acid aqueous solution at 70 degrees C, indicate in all cases the operation of a contracting volume rate law. The specific rates increased with the Fell content following approximately a second-order polynomial expression. This result suggests that the transfer of Fe-III controls the dissolution rate, and that the leaching of a first layer of ions Co-II and Fe-II leaves exposed a surface enriched in slower dissolving octahedral Fe-III ions. Within this model, inner vicinal lattice Fe-II accelerates the rate of Fe-III transfer via internal electron hopping. A chain mechanism, involving successive electron transfers, fits the data very well. (C) 2006 Elsevier B.V. All rights reserved.

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A representative study is reported on the electrical properties of SnO2: Sb. ultrathin films (thickness of 40-70 nm) produced by a deposition method based on aqueous colloidal suspensions of 3-5 nm crystalline oxides. The results revealed the films' electrical behavior in a range of 10-300 K, showing a strong dependence on dopant incorporation, with minimum resistivity values in 10 mol % of Sb content. All the samples displayed semiconductor behavior, but the transport mechanism showed a strong dependence on thickness, making it difficult to fit it to well-known models. In thicker films, the mechanism proved to be an intermediary system, with thermally activated and hopping features. Electron hopping was estimated in the range of 0.4-1.9 nm, i.e., in the same order as the particle size. (c) 2007 American Institute of Physics.