On the nonminimal vector coupling in the Duffin-Kemmer-Petiau theory and the confinement of massive bosons by a linear potential

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Theory of small aspect ratio waves in deep water

In the limit of small values of the aspect ratio parameter (or wave steepness) which measures the amplitude of a surface wave in units of its wave-length, a model equation is derived from the Euler system in infinite depth (deep water) without potential flow assumption. The resulting equation is shown to sustain periodic waves which on the one side tend to the proper linear limit at small amplitudes, on the other side possess a threshold amplitude where wave crest peaking is achieved. An explicit expression of the crest angle at wave breaking is found in terms of the wave velocity. By numerical simulations, stable soliton-like solutions (experiencing elastic interactions) propagate in a given velocities range on the edge of which they tend to the peakon solution. (c) 2005 Elsevier B.V. All rights reserved.

Study of elastic properies of Ti3Al intermetallic compound using the ab initio calculation

The elastic properties of a Ti3Al intermetallic compound were studied using full potential (FP LAPW ) with the APW+lo method. The FP-LAPW is among the most accurate band structure calculations currently available and is based on the density functional theory with general gradient approximation for the exchange and correlation potential. This method provides the structural properties of the ground state as bulk modulus, equilibrium lattice parameter, and equilibrium minimum energy, and the elastic properties as shear modulus, young modulus, Zener coefficient (anisotropy), and Poisson coefficient. The calculated elastic properties are coherent with the elastic properties of the material.

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].