Quality of service control for rt-VBR connections in ATM networks

Nowadays, networks must support applications such as: distance learning, electronic commerce, access to Internet, Intranets and Extranets, voice over IP (Internet Protocol) and many others. These new applications, employing data, voice, and video traffic, require high bandwidth and Quality of Service (QoS). The ATM (Asynchronous Transfer Mode) technology, together with dynamic resource allocation methods, offers network connections that guarantee QoS parameters, such as minimum losses and delays. This paper presents a system that uses Network Management Functions together with dynamic resource allocation for provision of the end-to-end QoS parameters for rt-VBR connections.

An accurate low-voltage analog memory-cell with built-in multiplication

A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.

Energy-performance tradeoffs in software transactional memory

Transactional memory (TM) is a new synchronization mechanism devised to simplify parallel programming, thereby helping programmers to unleash the power of current multicore processors. Although software implementations of TM (STM) have been extensively analyzed in terms of runtime performance, little attention has been paid to an equally important constraint faced by nearly all computer systems: energy consumption. In this work we conduct a comprehensive study of energy and runtime tradeoff sin software transactional memory systems. We characterize the behavior of three state-of-the-art lock-based STM algorithms, along with three different conflict resolution schemes. As a result of this characterization, we propose a DVFS-based technique that can be integrated into the resolution policies so as to improve the energy-delay product (EDP). Experimental results show that our DVFS-enhanced policies are indeed beneficial for applications with high contention levels. Improvements of up to 59% in EDP can be observed in this scenario, with an average EDP reduction of 16% across the STAMP workloads. © 2012 IEEE.

Refrigerator COP with thermal storage

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of microwave irradiation and water storage on the viscoelastic properties of denture base and reline acrylic resins

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of Biomimetic Remineralization on the Dynamic Nanomechanical Properties of Dentin Hybrid Layers

The mineral and organic phases of mineralized dentin contribute co-operatively to its strength and toughness. This study tested the null hypothesis that there is no difference in nano-dynamic mechanical behavior (complex modulus-E*; loss modulus-E ''; storage modulus-E'; in GPa) of dentin hybrid layers (baseline: E*, 3.86 +/- 0.24; E '', 0.23 +/- 0.05; E', 3.85 +/- 0.24) created by an etch-and-rinse adhesive in the presence or absence of biomimetic remineralization after in vitro aging. Using scanning probe microscopy and nano-dynamic mechanical analysis, we demonstrated that biomimetic remineralization restored the nano-dynamic mechanical behavior of heavily remineralized, resin-sparse regions of dentin hybrid layers (E*, 19.73 +/- 3.85; E '', 8.75 +/- 3.97; E', 16.02 +/- 2.58) to those of the mineralized dentin base (E*, 19.20 +/- 2.42; E '', 6.57 +/- 1.96; E', 17.39 +/- 2.0) [p > 0.05]. Conversely, those resin-sparse, water-rich regions degraded in the absence of biomimetic remineralization, with significant decline [p < 0.05] in their complex and storage moduli (E*, 0.83 +/- 0.35; E '', 0.88 +/- 0.24; E', 0.62 +/- 0.32). Intrafibrillar apatite deposition preserves the integrity of resin-sparse regions of hybrid layers by restoring their nanomechanical properties to those exhibited by mineralized dentin.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Storage moduli, loss moduli and damping factor of GaAs and Ga1-xMnxAs thin films using DMA 2980

The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1-xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45 degrees C <= T <= 70 degrees C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs <= 20% allow damping at temperature range of 45 degrees C <= T <= 70 degrees C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1-xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1-xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1-xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45 degrees C <= T <= 70 degrees C Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature. (C) 2013 Elsevier Ltd. All rights reserved.