Theoretical analysis of the energy levels induced by oxygen vacancies and the doping process (Co, Cu and Zn) on SnO2 (110) surface models

Density functional calculation at B3LYP level was employed to study the surface oxygen vacancies and the doping process of Co, Cu and Zn on SnO2 (110) surface models. Large clusters, based on (SnO2)(15) models, were selected to simulate the oxidized (Sn15O30), half-reduced (Sn15O29) and the reduced (Sn15O28) surfaces. The doping process was considered on the reduced surfaces: Sn13Co2O28, Sn13Cu2O28 and Sn13Zn2O28. The results are analyzed and discussed based on a calculation of the energy levels along the bulk band gap region, determined by a projection of the monoelectron level structure on to the atomic basis set and by the density of states. This procedure enables one to distinguish the states coming from the bulk, the oxygen vacancies and the doping process, on passing from an oxidized to a reduced surface, missing bridge oxygen atoms generate electronic levels along the band gap region, associated with 5s/5p of four-/five-fold Sn and 2p of in-plane O centers located on the exposed surface, which is in agreement with previous theoretical and experimental investigations. The formation energy of one and two oxygen vacancies is 3.0 and 3.9 eV, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO2 (110) surface models

We theoretically investigated how the formation of oxygen vacancies and the addition of niobium and chromium atoms as dopants modify the varistor properties of TiO2. The calculations were carried out at the HF level using a contracted basis set, developed by Huzinaga et al.. to represent the atomic centers on the (110) surface for the large (TiO2)(15) cluster model. The change of the values for the net atomic charges and band gap after oxygen vacancy formation and the presence of dopants in the lattice are analyzed and discussed. It is shown that the formation of oxygen vacancies decreases the band gap while an opposite effect is found when dopants are located in the reduced surface. The theoretical results are compared with available experimental data. A plausible explanation of the varistor behavior of this system is proposed. (C) 1997 John Wiley & Sons, Inc.

Zeta potential and doping in polyaniline dispersions

Polyaniline (PAni) has been classified as an intractable polymer, particularly in its conducting form, the emeraldine salt (ES). Therefore one can consider the mixture of water and PAni as a suspension. The conducting form of PAni can be obtained by a doping process known as acid doping, in which a strong acid turns PAni from its insulating form, the emeraldine base (EB), into the conducting form, the emeraldine salt. With the objective of establishing a correlation between the doping level and the zeta potential of polyaniline dispersions, polyaniline + HCl aqueous suspensions were prepared. Positive zeta potential values for the various suspensions of PAni showed that it acquired positive charges after the doping process. It was also observed an increase in zeta potential values as HCl concentration increased, which could be correlated to UV-visible spectra of PAni suspensions.

Indirect doping of microstructures fabricated by two-photon polymerization with gold nanoparticles

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The role of the Eu3+ ions in structure and photoluminescence properties of SrBi2Nb2O9 powders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A theoretical analysis of the TiO2/Sn doped (110) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

Effect of natural rubber latex on the conducting state of polyaniline blends determined by Raman spectroscopy

Blends possessing the elastomeric properties of natural rubber (NR) and the conducting properties of conducting polymer (polyaniline, PANI) were obtained, which are promising for further application in deformation sensors. Blends containing 20% (v/v) of PANI in 80% of NR latex were fabricated by casting in the form of free-standing films and treated either with HCl or with corona discharge, which lead PANI to its conducting state (doping process). Characterization was carried out by Raman spectroscopy, d.c. conductivity and thermogravimetric analysis. Evidence for chemical interaction between PANI and NR was observed, which allowed the conclusion that the NR latex itself is able partially to induce both the primary doping of PANI (by protonation) and the secondary doping of PANI (by changing the chain conformation). Further improvement in the primary doping could be obtained for the blends either by corona discharge or by exposing them to HCl the electrical conductivity reached in the blends was dependent on the doping conditions used, as observed by Raman scattering. Copyright (C) 2003 John Wiley Sons, Ltd.

Photocatalytic decomposition of methylene blue via Fenton mechanisms by silicon wafer doped with Au and Cu: a theoretical and experimental study

In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.

Estudo da fotossensibilidade de materiais híbridos de sílica dopados com heteropoliânions de tungstênio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeitos da dopagem nas propriedades elétricas do sistema supercondutor BSCCO com elemento terra rara

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The Influence of Small Quantities of Oxygen in the Structure, Microstructure, Hardness, Elasticity Modulus and Cytocompatibility of Ti-Zr Alloys for Dental Applications

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Europium doped zinc sulfide: a correlation between experimental and theoretical calculations

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeitos do tratamento térmico na obtenção da fase 2223 em amostras de BSCCO com e sem substituição

Pós-graduação em Ciência dos Materiais - FEIS

Fingerprints of short-range and long-range structure in BaZr1-xHfxO3 solid solutions: an experimental and theoretical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of Densification Process and Microstructure for Highly Dense Doped MgB2 Bulk Samples

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)