8 resultados para charge compensation

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Electrical properties of Er-doped SnO2 thin films obtained by sol-gel-dip-coating technique were measured. When compared to undoped tin dioxide, rare-earth doped films present much higher resistivity, indicating that Er3+ presents an acceptor-like character into the matrix, which leads to a high degree of electric charge compensation. Current-voltage characteristics, measured above room temperature for Er-doped films, lead to non-linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole-Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Through the polymeric precursor method were synthesized samples Ca0.98Sr0.01X0.01TiO3 (X= Eu3+, Sm3+ and Pr3+), which under different heat treatments were obtained with levels of distinct structural order-disorder. The synthesized materials were characterized by X-ray diffraction, confirming the obtaining of ahomogeneous material with perovskite-type orthorhombic structure. This characterization allowed evaluating the average crystallite size of the samples that varies depending on the rare-earth ion. The results of photoluminescence emission confirmed the presence of this optical phenomenon at room temperature and its relationship to the level of order-disorder structural system. The photoluminescence emission is more intense in samples annealed at 500 ° C (independent on the dopant ion), the variation of the dopant influence on the emission intensity due to charge transfer between the host and emitting rare-earth ion, where the doped with Pr3+ ion has charge transfer more efficient and hence more intense emission in the photoluminescence. Another factor that favors the optical property of the samples is the charge compensation, as it contributes to the increase in structural disorder due to formation of Ca2+ vacancies.

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The Pb1-xLaxTiO3 sintered ferroelectric ceramics with x equal to 0, 0.10, 0.15, 0.20, and 0.30 were studied by X-ray photoelectron spectroscopy (XPS). The binding energy of the Ti 2p lines is consistent with only one chemical state, Ti4+. on the other hand, in the case of Pb 4f and 0 Is XPS spectra, apart from the main peaks attributed to the lattice ions, minor peaks related to the surface states were also observed. The presence of Pb-0 state on the surface of all samples was due to the reduction of lead ions caused by the preferential removal of the oxygen ions after sputtering. The non observation of Ti3+ ions confirms that the mechanism of charge compensation that should occurs owing to the substitution of Ph2+ by La3+ is due to the preferential formation of Pb site vacancies, and not to a reduction from Ti4+ to Ti3+ states. Within the limits of the present experiment, there is no evidence of the existence of non-equivalent Pb, Ti, and La sites as the Pb1-xLaxTiO3 ceramic changes from a normal to a relaxor ferroelectric state. (c) 2006 Elsevier B.V. All rights reserved.

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This paper presents possible selective current compensation strategies based on the Conservative Power Theory (CPT). This recently proposed theory, introduces the concept of complex power conservation under non-sinusoidal conditions. Moreover, the related current decompositions results in several current terms, which are associated with a specific physical phenomena (power absorption P, energy storage Q, voltage and current distortion D). Such current components are used in this work for the definition of different current compensators, which can be selective in terms of minimizing particular disturbing effects. The choice of one or other current component for compensation directly affects the sizing and cost of active and/or passive devices and it will be demonstrated that it can be done to attend predefined limits for harmonic distortion, unbalances and/or power factor. Single and three-phase compensation strategies will be discussed by means of the CPT Framework. Simulation and experimental results will be demonstrated in order to validate their performance. © 2009 IEEE.