Investigation of Ferroelectric Layered Perovskite Barium Bismuth Tantalate Prepared by Solid-State Reaction

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of the excess of bismuth on the morphology and properties of the BaBi2Ta2O9 ceramics

In this study, the effect of bismuth content on the crystal structure, morphology and electric properties of barium-bismuth-tantalate (BBT) ceramics was explored with the aid of X-ray diffraction (XRD), scanning electron microcopy (SEM), dielectric properties and ferroelectric hysteresis loops. BaBi2Ta2O9 (BBT) ceramics have been successfully prepared by the solid-state reaction. The BBT phase was crystallized at 900 degreesC for 2 h. The excess of bismuth controls the grain size, affecting the density of the material. Measurements of dieletric constant and dieletric losses confirm that the material is a ferroeletric with a Curie temperature around 77 degreesC. The dieletric constant measured at room temperature was 400, with a dielectric loss of 0.03. Both the phase-transition behaviour and ferroelectric properties, such as spontaneous polarization (P-s), showed a dependence on Bi content. (C) 2004 Elsevier B.V. All rights reserved.

Structure and Properties of Barium Bismuth Titanate Prepared by Mechanochemical Synthesis

Bi4Ti4O15 [BBT], a member of Aurivillius bismuth-based layer-structure perovskites, was prepared from stoichiometric amounts of BaTiO3 [BT] and Bi4Ti3O12 [BIT] obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. BBT ceramics were sintered at 1100C for 4 h without pre-calcination step within heating rate 10C/min. The formation of phase and crystal structure of BT, BIT and BBT were approved using X-ray analysis. The morphology of obtained powders and microstructure were exhamined using scanning electron microscopy. The electrical properties of sintered samples were carried out.

Phase formation and characterization of BaBi2Ta2O9 obtained by mixed oxide procedure

Ferroelectric layefed-perovskite BaBi2Ta2O9 (BBT) has been prepared successfully by solid-state reaction. The influence of pressure and temperature/time annealing regime on the BBT phase formation was analyzed. The powders were characterized by thermal analysis and Xray diffraction and the sintered pellets by scanning electron microscopy. The crystalline BBT phase, free of secondary phases was obtained at 950 degreesC for 2 h. For an applied field strength of 380 kV/cm, a remnant polarization of 7.6 muC/cm(2) and an electric coercive field of 45.7 kV/cm were obtained. (C) 2004 Elsevier B.V. All rights reserved.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Crystallographic, dielectric and optical properties of SrBi2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (PvTi/SiO2/Si), n-type (100)-oriented and p-type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P-r values of 6.24 muC/cm(2) and 31.5 kV/cm for the film annealed at 800 degreesC. The film deposited onto fused silica and treated at 700 degreesC presented around 80 % of transmittance.

Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Barium uptake by maize plants as affected by sewage sludge in a long-term field study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence of barium-calcium titanates obtained by the microwave-assisted hydrothermal method (MAH)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes

The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi(4)Ti(3)O(12), CaBi(4)Ti(4)O(15) and SrBi(4)Ti(4)O(15) films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films. (c) 2007 Elsevier B.V All rights reserved.

Dielectric relaxation and relaxor behavior in bilayered perovskites

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Genotoxicity in primary human peripheral lymphocytes after exposure to radiopacifiers in vitro

Taking into consideration that DNA damage plays an important role in carcinogenesis, the purpose of this study was to evaluate whether some radiopacifiers widely used in clinical practice are able to induce genetic damage in primary human cells in vitro. Human peripheral lymphocytes obtained from 10 healthy volunteers were exposed to barium sulphate (BaSO(4)), zirconium oxide (ZnO(2)) and bismuth oxide (Bi(2)O(3)) at final concentrations ranging from 1 to 1000 mu g/mL for 1 h at 37 degrees C. The negative control group was treated with vehicle control (phosphate buffer solution) for 1 h at 37 degrees C and the positive control group was treated with hydrogen peroxide (at 100 mu M) for 5 min on ice. Results were analyzed by the Friedman non-parametric test. The results pointed all compounds tested out did not induce DNA breakage in human peripheral lymphocytes as depicted by the mean tail moment and tail intensity in all concentrations tested. In summary, our results indicate that exposure to these radiopacifiers may not be a factor that increases the level of DNA lesions in human peripheral lymphocytes as detected by single cell gel (comet) assay.

Radiographic effect of different radiopacifiers on a potential retrograde filling material

Objective. The objective of this study was to evaluate the radiopacity of white Portland cement (PC) associated with bismuth oxide (Bi(2)O(3)), barium sulfate (BaSO(4)), iodoform (CHI(3)), and zirconium oxide (ZrO(2)). White mineral trioxide aggregate (WMTA) and PC without radiopacifier were used as positive and negative controls, respectively.Study design. Following International Organization for Standardization (ISO) 6876/2001, 5 circular specimens (10 x 1 mm) were made from each material. After the materials set, radiographs were taken using occlusal film and a graduated aluminum step-wedge varying in thickness from 2 to 16 mm. The dental X-ray unit (GE1000) was set at 50 Kvp, 10 mA, 18 pulses/s, and distance of 33.5 cm. The radiographs were digitized, and radiopacity was compared with the aluminum step-wedge, using Wixwin-2000 software (Gendex). Data (mm Al) were analyzed using analysis of variance and Tukey tests.Results. The PC + Bi(2)O(3) and WMTA samples presented greater radiopacity (5.88 and 5.72 mm Al, respectively), followed by PC + ZrO(2) (3.87 mm Al) and PC + CHI(3) (3.50 mm Al). The PC + BaSO(4) and PC samples presented the lowest radiopacity values (2.35 and 1.69 mm Al, respectively), which were below the minimum value recommended by the ISO.Conclusion. Analysis of the present results led to the conclusion that all of the materials tested presented acceptable radiopacity, except PC + BaSO(4) and pure PC. (Oral Surg Oral Med Oral Pathol Oral Radiol Endod 2009; 108: 628-632)

Radiopacity of Portland Cement Associated With Different Radiopacifying Agents

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)