Magnetoresistance and transistor-like behavior of a double quantum-dot via crossed Andreev reflections

The electric current and the magnetoresistance effect are studied in a double quantum-dot system, where one of the dots QD(a) is coupled to two ferromagnetic electrodes (F-1; F-2), while the second QD(b) is connected to a superconductor S. For energy scales within the superconductor gap, electric conduction is allowed by Andreev reflection processes. Due to the presence of two ferromagnetic leads, non-local crossed Andreev reflections are possible. We found that the magnetoresistance sign can be changed by tuning the external potential applied to the ferromagnets. In addition, it is possible to control the current of the first ferromagnet (F-1) through the potential applied to the second one (F-2). We have also included intradot interaction and gate voltages at each quantum dot and analyzed their influence through a mean field approximation. The interaction reduces the current amplitudes with respect to the non-interacting case, but the switching effect still remains as a manifestation of quantum coherence, in scales of the order of the superconductor coherence length. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723000]

Contactless measurement of colossal magnetoresistance in La1-xSrxMnO3 using the infrared magnetorefractive effect

The magnetorefractive effect (MRE) has been used for the first time to study the magnetotransport properties of La1-xSrxMnO3 perovskite materials. A direct correlation between the MRE and colossal magnetoresistance was observed. Samples with x = 0-0.3 prepared using the homogeneous coprecipitation and the solid state reaction methods were studied, covering the range of insulating to metallic behaviour. The M RE probed both the magnetically induced modification of the scattering of Drude-like electrons and the magnetic dependence of a stretching vibration mode. (C) 2004 Elsevier B.V. All rights reserved.