11 resultados para WAFER

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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We are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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OBJETIVO: Desenvolver uma dieta hiperlipídica de baixo custo, tendo farinha de soja como fonte proteica, que seja eficiente na seleção de ratos propensos e resistentes à obesidade e que permita alcançar fenótipo obeso nos animais propensos. Além desses requisitos, a dieta deve ser palatável e não rejeitada a curto prazo pelo animal. MÉTODOS: A dieta proposta foi obtida misturando-se leite condensado (15,5%), amendoim (18,5%), farinha de soja (20,0%), óleo de milho (6,0%), ração Bio Tec (30,0%) e bolacha wafer de chocolate (10,0%). A mistura foi peletizada e submetida à análise bromatológica. A dieta foi ofertada a ratos Wistar durante uma semana; posteriormente, os animais foram divididos em três grupos, de acordo com o ganho de peso. O terço superior foi considerado propenso à obesidade e o terço inferior, resistente à obesidade. Após 80 dias de oferta da dieta, os animais foram sacrificados e foram quantificados o peso corpóreo, consumo alimentar, gorduras retroperitoneal, periepididimal, de carcaça e gorduras totais. RESULTADOS: Verificou-se que a dieta apresentava 5,31kcal/g, com a seguinte composição: 22,3% de gordura, 22,2% de proteína, 15,9% de fibra, estimando-se 35,7% de carboidrato. Ratos propensos à obesidade, alimentados por 87 dias com a dieta hipercalórica, apresentaram peso corpóreo, gorduras retroperitoneal, periepididimal e totais significativamente maiores do que animais resistentes à obesidade (p<0,05). O consumo de alimentos também foi maior em animais propensos (p<0,05). Verificou-se também que a substituição da caseína pela farinha de soja, como componente proteico da ração, levou à diminuição de 96,0% no custo do estudo. CONCLUSÃO: A dieta formulada com farinha de soja apresentou custo reduzido e foi capaz de desenvolver o fenótipo obeso em ratos propensos, à semelhança do observado na literatura com outras dietas.

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The present work describes a more efficient methodology for the chlorination of water containing disperse dyes, where the chlorinated byproducts identified by mass spectra are compared. this investigation, we tested the degradation of Cl Disperse Blue 291 dye, 2-[(2-Bromo-4,6-dinitrophenyl)azo]-5-(diethylamino)-4-methoxyacetanilide) a commercial azo dye with mutagenic properties. The present work evaluates the photoelectrocatalytic efficiency of removing the Cl Disperse Blue 291 dye from a wastewater of the textile industry. We employed NaCl as a supporting electrolyte. It should be noted that photoelectrocatalytic techniques are non-conventional method of generating chlorine radicals. The by-products formed in this process were analyzed using spectrophotometry, liquid chromatography, dissolved organic carbon, mass spectral analysis and mutagenicity assays. The process efficiency was compared with the conventional chlorination process adopted during sewage and effluents treatment processes. This conventional chlorination process is less efficient in removing color, total organic carbon than the photoelectrochemistry technique. Furthermore, we shall demonstrate that the mutagenicity of the generated by-products obtained using photoelectrocatalysis is completely different from that obtained by the conventional oxidation of chloride ions in the drinking wafer treatment process. (C) 2012 Published by Elsevier B.V.

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The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N- propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with on-spot MALDI-TOF MS detection. © 2005 Elsevier Inc. All rights reserved.

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The electromechanical impedance (EMI) technique has been successfully used in structural health monitoring (SHM) systems on a wide variety of structures. The basic concept of this technique is to monitor the structural integrity by exciting and sensing a piezoelectric transducer, usually a lead zirconate titanate (PZT) wafer bonded to the structure to be monitored and excited in a suitable frequency range. Because of the piezoelectric effect, there is a relationship between the mechanical impedance of the host structure, which is directly related to its integrity, and the electrical impedance of the PZT transducer, obtained by a ratio between the excitation and the sensing signals.This work presents a study on damage (leaks) detection using EMI based method. Tests were carried out in a rig water system built in a Hydraulic Laboratory for different leaks conditions in a metallic pipeline. Also, it was evaluated the influence of the PZT position bonded to the pipeline. The results show that leaks can effectively be detected using common metrics for damage detection such as RMSD and CCDM. Further, it was observed that the position of the PZT bonded to the pipes is an important variable and has to be controlled.

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This work aims to obtain plasma thin film composites with hydrophobic/hydrophilic alternated regions, which are useful for the production of miniaturized mixers. These regions were acquired by two different strategies: either the codeposition of TEOS and HFE plasma thin films or the exposition of TEOS plasma films to ultraviolet radiation (UVA and UVC). These films were characterized by several chemical and physical techniques. The refractive indexes vary from 1.4 to 1.7; infrared and photoelectron spectroscopy detect Si-O-Si and CHn species. Silicone-like structures with high or low number of amorphous carbon microparticles and with fluorinated organic clusters were produced. Cluster dimensions were in the 1-5 mm range and they are made of graphite or COF (carbon/oxygen/fluorine) compounds. Scanning electron and optical microscopy showed rough surfaces. Water contact angles were 90º; however, for TEOS films that value changed after 6 hr of UVC exposure. Moreover, after UV exposure, organic polar compounds could be adsorbed in those films and water was not. The passive mixer performance was simulated using the FemLab 3.2® program and was tested with 20 nm thick films on a silicon wafer, showing the capacity of these films to be used in such devices.