66 resultados para VANADIUM PENTOXIDE

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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in this work, we report a new way of modifying an electrode by combining the intrinsic conductivity property of vanadium pentoxide xerogel with its water insolubility in the presence of the cationic surfactant N-cetyl-N,N,N,trimethyl-ammonium bromide (CTA(+)Br(-)). The obtained hybrid compound enables the immobilization of electroactive anions such as hexacyanoferrate (III) ([Fe(CN)(6)](3-)) and its analogue pentacyanonitrosylferrate (II) ([Fe(CN)(5)NO](2-)), rather than cations. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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This work describes a modified sol-gel method for the preparation of V 2O 5/TiO 2 catalysts. The samples have been characterized by N 2 adsorption at 77K, x-ray diffractometry (XRD) and Fourier Transform Infrared (FT-IR). The surface area increases with the vanadia loading from 24 m 2 g -1, for pure TiO 2, to 87 m 2 g -1 for 9wt.% of V 2O 5. The rutile form is predominant for pure TiO 2 but became enriched with anatase phase when vanadia loading is increased. No crystalline V 2O 5 phase was observed in the catalysts diffractograms. Two species of surface vanadium observed by FT-IR spectroscopy a monomeric vanadyl and polymeric vanadates, the vanadyl/vanadate ratio remains practically constant.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr(0.10)Ti(0.90)]O(3), (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics. (c) 2008 American Institute of Physics.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Vanadium modified barium zirconium titanate ceramics Ba(Zr(0.10)Ti(0.90))O(3):2V (BZT:2V) were prepared from the mixed oxide method. According to X-ray diffraction analysis, addition of vanadium leads to ceramics free of secondary phases. Electrical characteristics reveal a dielectric permittivity at around 15,000 with low dielectric loss with a remnant polarization (P(r))of 8 mu C/cm(2) at 2 kV/cm. From the obtained results, we assume that vanadium substitution in the BZT lattice affects dielectric characteristics due to the electron-relaxation-mode in which carriers (polarons, protons, and so on) are coupled with existing dielectric modes. (C) 2009 Published by Elsevier B.V.

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Supramolecular structures of polyaniline (PANI) and vanadium oxide (V2O5) have been assembled via the electrostatic layer-by-layer (LBL) technique. The films were characterized by vibrational analyses which indicated that the interactions between the two components lead to different properties in the films when compared to sol-gel films. of the neat compounds. In particular, using surface enhanced Raman scattering we were able to probe LBL film properties that depend on which material comprises the topmost layer.

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This work describes an analytical procedure for vanadium determination in human hair slurries by electrothermal AAS using longitudinal heating (LHGA) and transversal heating (THGA) graphite furnace atomizers. The samples were powdered using cryogenic grinding and the hair slurries containing 0.2% (m/v) were prepared in three different media for determination of vanadium: 0.14 mol L-1 HNO3, 0.1% (v/v) Triton X-100 and 0.1% (v/v) water soluble tertiary amines (CFA-C, pH 8). The limits of detection (LOD), limits of quantification (LOQ), and characteristic masses obtained were 0.28, 0.95 mu g L-1 and 35 pg (LHGA) and 0.34, 1.13 mu g L-1 and 78 pg (THGA), respectively. The accuracy of the analytical results obtained by the proposed procedure in both equipments was confirmed by a paired t-test at the 95% confidence level and compared with a conventional procedure based on acid digestion. (c) 2006 Elsevier B.V. All rights reserved.

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In this work it was developed a procedure for the determination of vanadium in urine samples by electrothermal atomic absorption spectrometry using successive injections for preconcentration into a preheated graphite tube. Three 60 μL volumes were sequentially injected into the atomizer preheated to a temperature of 110°C. Drying and pyrolysis steps were carried out after each injection. A chemical modifier, barium difluoride (100 mg L-1), and a surfactant, Triton X-100 (0.3% v v-1), were added to the urine sample. When injecting into a hot graphite tube, the sample flow-rate was 0.5 μL s-1. The limits of detection and quantification were 0.54 and 1.82 without preconcentration, and 0.11 and 0.37 μg L-1 with preconcentration, respectively. The accuracy of the procedure was evaluated by an addition-recovery experiment employing urine samples. Recoveries varied from 96.0 to 103% for additions ranging from 0.8 to 3.5 μg L-1 V. The developed procedure allows the determination of vanadium in urine without any sample pretreatment and with minimal dilution of the sample.

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Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

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