Low cost technology applied to thermometry of grains

Modern agriculture demands investments in technology that allows the farmers to improve productivity and quality of their products, aiming to establish themselves in a competitive market. However, the high costs of acquiring and maintaining such technology may be an inhibiting factor to its spread and acceptance, mainly to a large number of small grain Brazilian farmers, who need low cost innovative technological solutions, suitable for their financial reality. Starting from this premise, this paper presents the development of a low cost prototype for monitoring the temperature and humidity of grains stored in silos, and the economic implications of cost/benefit ratio of innovative applications of low cost technology in the process of thermometry of grains. The prototype was made of two electronic units, one for acquisition and another one for data reception, as well as software, which offered the farmers more precise information for the control of aeration. The data communication between the electronic units and the software was reliable and both were developed using low cost electronic components and free software tools. The developed system was considered as potentially viable to small grain Brazilian farmers; it can be used in any type of small silos. It provided reduction of costs of installation and maintenance and also offered an easy expansion system; besides the low cost of development when compared to similar products available in the Brazilian market.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Effect of s/g ratio on kraft pulping and ecf bleaching of some poplars and eucalyptus

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of cryoprotectants on the reconstitution of silica nanoparticles produced by sol-gel technology

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Bioenergy from stillage anaerobic digestion to enhance the energy balance ratio of ethanol production

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)