Improved Conductivity Induced by Photodesorption in SnO2 Thin Films Grown by a Sol-Gel Dip Coating Technique

Thin films of undoped and Sb-doped SnO2 have been prepared by a sol-gel dip-coating technique. For the high doping level (2-3 mol% Sb) n-type degenerate conduction is expected, however, measurements of resistance as a function of temperature show that doped samples exhibit strong electron trapping, with capture levels at 39 and 81 meV. Heating in a vacuum and irradiation with UV monochromatic light (305 nm) improve the electrical characteristics, decreasing the carrier capture at low temperature. This suggests an oxygen related level, which can be eliminated by a photodesorption process. Absorption spectral dependence indicates an indirect bandgap transition with Eg ≅ 3.5 eV. Current-voltage characteristics indicate a thermionic emission mechanism through interfacial states.

Magnetic domain states in nano-sized Co nuclei electrodeposited onto monocrystalline silicon

In the present work, nano-sized magnetic nuclei of Co have been electrodeposited onto p-Si (111). The deposition follows a mechanism of progressive nucleation and growth controlled by diffusion. MFM studies showed that the transition between magnetic domain states is strongly dependent on the size and shape of the nuclei. A critical height h0 is defined below which the nuclei presented always a single-domain configuration. The limiting lower boundary for the single-domain state calculated from the theory is quantitatively coincident with the experimental results. © 2004 Elsevier B.V. All rights reserved.

Heterogeneous photocatalytic treatment of organic dyes in air and aqueous media

This review focuses on the heterogeneous photocatalytic treatment of organic dyes in air and water. Representative studies spanning approximately three decades are included in this review. These studies have mostly used titanium dioxide (TiO2) as the inorganic semiconductor photocatalyst of choice for decolorizing and decomposing the organic dye to mineralized products. Other semiconductors such as ZnO, CdS, WO3, and Fe2O3 have also been used, albeit to a much smaller extent. The topics covered include historical aspects, dark adsorption of the dye on the semiconductor surface and its role in the subsequent photoreaction, semiconductor preparation details, photoreactor configurations, photooxidation kinetics/mechanisms and comparison with other Advanced Oxidation Processes (e.g., UV/H2O2, ozonation, UV/O3, Fenton and photo-Fenton reactions), visible light-induced dye decomposition by sensitization mechanism, reaction intermediates and toxicity issues, and real-world process scenarios. © 2008 Elsevier B.V. All rights reserved.

In vitro effect of low-level laser therapy on typical oral microbial biofilms

The aim of this study was to evaluate the effect of specific parameters of low-level laser therapy (LLLT) on biofilms formed by Streptococcus mutans, Candida albicans or an association of both species. Single and dual-species biofilms - SSB and DSB - were exposed to laser doses of 5, 10 or 20 J/cm 2 from a near infrared InGaAsP diode laser prototype (LASERTable; 780 ± 3 nm, 0.04 W). After irradiation, the analysis of biobilm viability (MTT assay), biofilm growth (cfu/mL) and cell morphology (SEM) showed that LLLT reduced cell viability as well as the growth of biofilms. The response of S. mutans (SSB) to irradiation was similar for all laser doses and the biofilm growth was dose dependent. However, when associated with C. albicans (DSB), S. mutans was resistant to LLLT. For C. albicans, the association with S. mutans (DSB) caused a significant decrease in biofilm growth in a dose-dependent fashion. The morphology of the microorganisms in the SSB was not altered by LLLT, while the association of microbial species (DSB) promoted a reduction in the formation of C. albicans hyphae. LLLT had an inhibitory effect on the microorganisms, and this capacity can be altered according to the interactions between different microbial species.

The role of hierarchical morphologies in the superior gas sensing performance of CuO-based chemiresistors

The development of gas sensors with innovative designs and advanced functional materials has attracted considerable scientific interest given their potential for addressing important technological challenges. This work presents new insight towards the development of high-performance p-type semiconductor gas sensors. Gas sensor test devices, based on copper (II) oxide (CuO) with innovative and unique designs (urchin-like, fiber-like, and nanorods), are prepared by a microwave-assisted synthesis method. The crystalline composition, surface area, porosity, and morphological characteristics are studied by X-ray powder diffraction, nitrogen adsorption isotherms, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. Gas sensor measurements, performed simultaneously on multiple samples, show that morphology can have a substantial influence on gas sensor performance. An assembly of urchin-like structures is found to be most effective for hydrogen detection in the range of parts-per-million at 200 °C with 300-fold larger response than the previously best reported values for semiconducting CuO hydrogen gas sensors. These results show that morphology plays an important role in the gas sensing performance of CuO and can be effectively applied in the further development of gas sensors based on p-type semiconductors. High-performance gas sensors based on CuO hierarchical morphologies with in situ gas sensor comparison are reported. Urchin-like morphologies with high hydrogen sensitivity and selectivity that show chemical and thermal stability and low temperature operation are analyzed. The role of morphological influences in p-type gas sensor materials is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Morphological modifications and surface amorphization in ZnO sonochemically treated nanoparticles

Application of nanoscale materials in photovoltaic and photocatalysis devices and photosensors are dramatically affected by surface morphology of nanoparticles, which plays a fundamental role in the understanding of the physical and chemical properties of nanoscale materials. Zinc oxide nanoparticles with an average size of 20 nm were obtained by the use of a sonochemical technique. X-ray diffraction (XRD) associated to Rietveld refinements and transmission electron microscopy (TEM) were used to study structural and morphological characteristics of the samples. An amorphous shell approximately 10 nm thick was observed in the ultrasonically treated sample, and a large reduction in particle size and changes in the lattice parameters were also observed. © 2012 Elsevier B.V. All rights reserved.

Cálculo de funções de Wannier eletrônicas para aplicações em ciência dos materiais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência da temperatura e do tipo de substrato em filmes de GaN depositados por magnetron sputtering reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estados de impurezas em semicondutores e nanoesetruturas sob campos externos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Photoelectron multipliers based on avalanche pn - i - pn structures

We present a new physical principle to design an optoelectronic device, which consists of a multilayered semiconductor structure, where the necessary conditions for generation of photoelectrons are met, such that it will enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around the p - n junctions of a reverse biased pn - i - pn structure. The mathematical model and computer simulations of this Semiconductor Photo-electron Multiplier (SPEM) for different semiconductor materials are presented. Its performance is evaluated and compared with that of conventional devices. The Geiger operational mode is briefly discussed which may be used in Silicon Photomultiplier (SiPM) as an elementary photo detector to enhance its performance.

Caracterização de diodos tipo Schottky fabricados com poli-o-metoxianilina em diversas temperaturas

Technological advances achieved during the twentieth century strongly boosted the scientific research in the area of condensed matter physics, especially in the study and development of new semiconductor materials. In the segment, the development of semiconducting polymers for application in electronic devices promotes the field of organic electronics...(Complete abstract click electronic access below)

Um estudo teórico e experimental de nanoestruturas de 'ZnS': propriedades físicas e químicas

Pós-graduação em Química - IQ

Eletrofiação de fibras de borracha natural com adição de polianilina

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Simultaneous observation of the magnetic and electric behavior in a correlated system near a metal-semiconductor transition: ESR in pellets of conducting polymers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)