CMOS-based active pixel for low-light-level detection: Analysis and measurements

An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is proposed. An analytic expression for the output voltage of the APS obtained with this capacitance model is in good agreement with measurements and is more accurate than the models used previously. A different mode of operation for the APS based on the dc level of the output is suggested. This new mode has better low-light-level sensitivity than the conventional APS operating mode, and it has a slower temporal response to the change of the incident light power. At 1μW/cm2 and lower levels of light, the measured signal-to-noise ratio (SNR) of this new mode is more than 10 dB higher than the SNR of previously reported APS circuits. Also, with an output SNR of about 10 dB, the proposed dc level is capable of detecting light powers as low as 20 nW/cm2, which is about 30 times lower than the light power detected in recent reports by other groups. © 2007 IEEE.

Taxa de absorção atmosférica sobre as cidades de Botucatu-SP e Rio de Janeiro-RJ

O segundo satélite da Missão Espacial Completa Brasileira (SCD2/MECB) foi colocado em órbita em 23 de Outubro de 1998 e carrega a bordo um experimento de células solares. Célula solar de silício é um dispositivo semicondutor, que pode medir a intensidade da radiação visível e parte da radiação infravermelha (400-1100 nm). O experimento permite medir simultaneamente a insolação direta e parte da radiação solar que é refletida pela Terra para o espaço. Os dados do experimento célula solar são transmitidos em tempo real pela telemetria do satélite e recebidos pela estação terrestre em Cuiabá, MT-Brasil (16°S; 56°W). Este fato limita a cobertura espacial para um círculo sobre a América do Sul. O albedo planetário é obtido dentro desta cobertura e seus valores podem ser agrupados em períodos temporais (anual, sazonal ou mensal), ou podem ser estudados para várias localizações (latitude e longitude) durante a vida do satélite. O coeficiente de transmissão atmosférica ou índice de claridade (Kt), medido em estações meteorológicas na superfície da Terra, junto com o valor medido simultaneamente do albedo planetário, permite calcular o coeficiente de absorção atmosférica (Ka). O método desenvolvido neste trabalho para avaliar Ka considera que o albedo planetário é composto por duas partes: uma refletividade local e uma refletividade não local. Considerando este novo conceito, é definida uma taxa de absorção atmosférica (denominada Ra) que é a razão entre Ka e a potência de irradiância solar líquida, que não atravessou a atmosfera (100%-Kt). A taxa de absorção atmosférica assim definida é independente da cobertura de nuvens. O histograma de freqüência de Ra mostra os valores de 0,86±0,07 e 0,88±0,09 sobre as cidades de Botucatu-SP e do Rio de Janeiro-RJ, durante os anos de 1999 até 2006, respectivamente.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Hopping-tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

Allocation of protective devices in distribution circuits using nonlinear programming models and genetic algorithms

The optimized allocation of protective devices in strategic points of the circuit improves the quality of the energy supply and the system reliability index. This paper presents a nonlinear integer programming (NLIP) model with binary variables, to deal with the problem of protective device allocation in the main feeder and all branches of an overhead distribution circuit, to improve the reliability index and to provide customers with service of high quality and reliability. The constraints considered in the problem take into account technical and economical limitations, such as coordination problems of serial protective devices, available equipment, the importance of the feeder and the circuit topology. The use of genetic algorithms (GAs) is proposed to solve this problem, using a binary representation that does (1) or does not (0) show allocation of protective devices (reclosers, sectionalizers and fuses) in predefined points of the circuit. Results are presented for a real circuit (134 busses), with the possibility of protective device allocation in 29 points. Also the ability of the algorithm in finding good solutions while improving significantly the indicators of reliability is shown. (C) 2003 Elsevier B.V. All rights reserved.

Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

A semiconductor strain gage tactile transducer

This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.

A structure excited by a DC motor of limited power supply and controlled by a pendulum like device

In this paper, a mathematical model is derived via Lagrange's Equation for a shear building structure that acts as a foundation of a non-ideal direct current electric motor, controlled by a mass loose inside a circular carving. Non-ideal sources of vibrations of structures are those whose characteristics are coupled to the motion of the structure, not being a function of time only as in the ideal case. Thus, in this case, an additional equation of motion is written, related to the motor rotation, coupled to the equation describing the horizontal motion of the shear building. This kind of problem can lead to the so-called Sommerfeld effect: steady state frequencies of the motor will usually increase as more power (voltage) is given to it in a step-by-step fashion. When a resonance condition with the structure is reached, the better part of this energy is consumed to generate large amplitude vibrations of the foundation without sensible change of the motor frequency as before. If additional increase steps in voltage are made, one may reach a situation where the rotor will jump to higher rotation regimes, no steady states being stable in between. As a device of passive control of both large amplitude vibrations and the Sommerfeld effect, a scheme is proposed using a point mass free to bounce back and forth inside a circular carving in the suspended mass of the structure. Numerical simulations of the model are also presented Copyright © 2007 by ASME.

A novel device with 36 channels for imaging and signal acquisition of the gastrointestinal tract based on AC biosusceptometry

The alternate current biosusceptometry (ACB) is a biomagnetic technique used to study some physiological parameters associated with gastrointestinal (GI) tract. For this purpose it applies an AC magnetic field and measures the response originating from magnetic marks or tracers. This paper presents an equipment based on the ACB which uses anisotropic magnetoresistive (AMR) sensors and an inexpensive electronic support. The ACB-AMR developed consists of a square array of 6x6 sensors arranged in a firstorder gradiometer configuration with one reference sensor. The equipment was applied to capture magnetic images of different phantoms and to acquire gastric contraction activity of healthy rats. The results show a reasonable sensitivity and spatial-temporal resolution, so that it may be applied for imaging of phantoms and signal acquisition of the GI tract of small animals. © 2010 IEEE.

The use of tuned filters as an attenuator device of harmonics generated by multipulse converters

The purpose of this paper is to present a computer model that enables the operation analysis of a tuned filter as an attenuator device of harmonic generated 12 and 18-pulses converters with Y-generalized differential connection. Are presented in this study physical considerations, mathematical modeling and digital simulations in the frequency domain using the software Orcad-Pspice®, which allows a spectral analysis of the harmonic components and supports the search for an optimal filtering process. It is unequivocally demonstrated the feasibility of the application as an alternative to optimize the use of multipulse converters, and enable the operation of this device within the established regulatory standards. The validation of the proposed model is based on results obtained in the time domain using Matlab/Simulink®. © 2011 IEEE.

Photocatalytic activity of semiconductor sulfide heterostructures

This paper reports a theoretical and experimental study of the heterostructure photocatalytic activity in a CdS or ZnS and CdS@ZnS decorated system prepared by a microwave assisted solvothermal (MAS) method. A theoretical model of the decorated system was created in order to analyze the electronic transition mainly in their interface. The results show that CdS and ZnS interfaces produce an electron charge transfer from the CdS electron-populated clusters to the ZnS hole-populated clusters which helps to enhance the photocatalytic activity of the CdS@ZnS decorated system. © 2013 The Royal Society of Chemistry.

An experimental nonlinear low dynamic stiffness device for shock isolation

The problem of shock generated vibration is very common in practice and difficult to isolate due to the high levels of excitation involved and its transient nature. If not properly isolated it could lead to large transmitted forces and displacements. Typically, classical shock isolation relies on the use of passive stiffness elements to absorb energy by deformation and some damping mechanism to dissipate residual vibration. The approach of using nonlinear stiffness elements is explored in this paper, focusing in providing an isolation system with low dynamic stiffness. The possibilities of using such a configuration for a shock mount are studied experimentally following previous theoretical models. The model studied considers electromagnets and permanent magnets in order to obtain nonlinear stiffness forces using different voltage configurations. It is found that the stiffness nonlinearities could be advantageous in improving shock isolation in terms of absolute displacement and acceleration response when compared with linear elastic elements. Copyright (C) 2015 Elsevier Ltd. All rights reserved