Modeling of organic light-emitting diodes with graded concentration in the emissive multilayer

We model the electrical behavior of organic light-emitting diodes whose emissive multilayer is formed by blends of an electron transporting material, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and a hole transporting material, N,N-'-diphenyl-N,N-'-bis(1,1(')-biphenyl)-4,4-diamine. The multilayer is composed of layers of different concentration. The Alq(3) concentration gradually decreases from the cathode to the anode. We demonstrate that these graded devices have higher efficiency and operate at lower applied voltages than devices whose emissive layer is made of nominally homogeneous blends. Our results show an important advantage of graded devices, namely, the low values of the recombination rate distribution near the cathode and the anode, so that electrode quenching is expected to be significantly suppressed in these devices. (C) 2004 American Institute of Physics.

Light emitting diodes containing Langmuir-Blodgett films of copolymer of a poly(p-phenylene-vinylene) derivative and poly(octaneoxide)

The properties of Langmuir and Langmuir-Blodgett (LB) films from a block copolymer with polyethylene oxide and phenylene-vinylene moieties are reported. The LB films were successfully transferred onto several types of substrates, with sufficient quality to allow for evaporation of a metallic electrode on top of the LB films to produce polymer light emitting diodes (PLEDs). The photoluminescence and electroluminescence spectra of the LB film and device were similar, featuring an emission at ca. 475 nm, from which we could infer that the emission mechanisms are essentially the same as in poly(p-phenylene) derivatives. Analogously to other PLEDs the current versus voltage characteristics of the LB-based device could be explained with the Arkhipov model according to which charge transport occurs among localized sites. The implications for nanotechnology of the level of control that may be achieved with LB devices will also be discussed.

Langmuir and langmuir-blodgett films of polyfluorenes and their use in polymer light-emitting diodes

The Langmuir and Langmuir-Blodgett (LB) film properties of two polyfluorene derivatives, namely poly(2,7-9,9'-dihexylfluorene-dyil) (PDHF) and poly(9,9 dihexylfluorene-dyil-vynilene-alt-1,4-phenylene-vyninele) (PDHF-PV), are reported. Surface pressure (Pi-A) and surface potential (Delta V-A) isotherms indicated that PDHF-PV forms true monolayers at the air/water interface, but PDHF does not. LB films could be transferred onto various types of substrate for both PDHF and PDHF-PV. Only the LB films from PDHF-PV could withstand deposition of a layer of evaporated metal to form a light-emitting diode (PLED), which had typical rectifying characteristics and emitted blue light. It is inferred that the ability of the polymer to form true monomolecular layers at the air/water interface seems to be associated with the viability of the LB films in PLEDs.

Thermal and structural properties of commercial dental resins light-cured with blue emitting diodes (LEDs)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of phototherapy with light-emitting diodes (890 nm) on tendon repair: an experimental model in sheep

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The influence of preparation method of OC1OC6-PPV films on the photo-oxidation process

Poly(p-phenylene vinylene) (PPV) derivatives are well known for their applications in polymer light emitting diodes (PLEDs). PPV derivatives are highly susceptible to photo-oxidation though, which is mainly caused by the scission of the vinyl double bond on the polymer backbone. In this work, we show that Langmuir-Blodgett (LB) films are less degraded than cast films of a PPV derivative (OC1OC6-PPV). Both films had similar thickness (similar to 50 nm) to allow for a more realistic comparison. Degradation was monitored with UV-vis and FTIR spectroscopies. The results indicated that cast films were completely degraded in ca. 400 min, while LB took longer time, i.e. about four times the values for the cast films. The differences can be attributed to the more compact morphology in the LB than in the cast films. With a compact morphology the diffusion of oxygen in the LB film is hampered and this causes a delay in the degradation process. (c) 2006 Elsevier Ltd. All rights reserved.

Dispositivos flexíveis de monitoramento de pH e de deflexão mecânica à base de polianilina

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Observation of persistent photoconductivity in vanadyl phthalocyanine

Persistent photoconductivity (PPC) in vanadyl phthalocyanine (VOPc) organic light-emitting diodes was investigated using photoconductive time response, photocurrent-voltage characteristics and charge extraction in linearly increasing voltage (CELIV) measurements. The experiments were performed in phase 1 (amorphous) and in phase 2 (crystalline) samples obtained by the physical vapour deposition (PVD) technique over ITO/glass electrodes with an Al covering electrode. The results indicated a photoconductivity with a long decay time in phase 1 VOPc described by a stretched exponential relaxation. The device showed a rectifying behaviour and the mobility of holes was measured by CELIV, following a dispersive model. In crystalline samples the PPC effect was not observed and the dominant mechanism of transport of holes was hopping in a Gaussian density of states.

On the origin of exciton formation in dye doped Alq(3) OLEDs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Kinetics of interface state-limited hole injection in alpha-naphthylphenylbiphenyl diamine (alpha-NPD) thin layers

Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.

Magnetic field effects on the conductivity of organic bipolar and unipolar devices at room temperature

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A novel voltage step-down/up ZCS-PWM Zeta converter

This paper presents an analysis of a novel pulse-width-modulated (PWM) voltage step-down/up Zeta converter, featuring zero-current-switching (ZCS) at the active switches. The applications in de to de and ac to de (rectifier) operation modes are used as examples to illustrate the performance of this new ZCS-PWM Zeta converter. Regarding to the new ZCS-PWM Zeta rectifier proposed, it should be noticed that the average-current mode control is used in order to obtain a structure with high power-factor (HPF) and low total harmonic distortion (THD) at the input current.Two active switches (main and auxiliary transistors), two diodes, two small resonant inductors and one small resonant capacitor compose the novel ZCS-PWM soft-commutation cell, used in these new ZCS-PWM Zeta converters. In this cell, the turn-on of the active switches occurs in zero-current (ZC) and their turn-off in zero-current and zero-voltage (ZCZV). For the diodes, their turn-on process occurs in zero-voltage (ZV) and their reverse-recovery effects over the active switches are negligible. These characteristics make this cell suitable for Insulated-Gate Bipolar Transistors (IGBTs) applications.The main advantages of these new Zeta converters, generated from the new soft-commutation cell proposed, are possibility of obtaining isolation (through their accumulation inductors), and high efficiency, at wide load range. In addition, for the rectifier application, a high power factor and low THD in the input current ran be obtained, in agreement with LEC 1000-3-2 standards.The principle of operation, the theoretical analysis and a design example for the new de to de Zeta converter operating in voltage step-down mode are presented. Experimental results are obtained from a test unit with 500W output power, 110V(dc) output voltage, 220V(dc) input voltage, operating at 50kHz switching frequency. The efficiency measured at rated toad is equal to 97.3%for this new Zeta converter.Finally, the new Zeta rectifier is analyzed, and experimental results from a test unit rated at 500W output power, 110V(dc) output voltage, 220V(rms) input voltage, and operating at 50kHz switching frequency, are presented. The measured efficiency is equal to 96.95%, the power-factor is equal to 0.98, and the input current THD is equal to 19.07%, for this new rectifier operating at rated load.

Novel high-power-factor ZCS-PWM preregulators

This paper introduces novel zero-current-switching (ZCS) pulsewidth-modulated (PWM) preregulators based on a new soft-commutation cell, suitable for insulated gate bipolar transistor applications. The active switches in these proposed rectifiers turn on in zero current and turn off in zero current-zero voltage. In addition, the diodes turn on in zero voltage and their reverse-recovery effects over the active switches are negligible. Moreover, based on the proposed cell, an entire family of de-to-de ZCS-PWM converters can be generated, providing conditions to obtain naturally isolated converters, for example, derived buck-boost, Sepic. and Zeta converters. The novel ac-to-dc ZCS-PWM boost and Zeta preregulators are presented in order to verify the operation of this soft-commutation cell, In order to minimize the harmonic contents of the input current, increasing the ac power factor, the average-current-mode control is used, obtaining preregulators with ac power factor near unity and high efficiency at wide load range. The principle of operation, theoretical analysis, design example, and experimental results from test units for the novel preregulators are presented. The new boost preregulator was designed to nominal values of 1.6 kW output power, 220 V(rms) input voltage, 400 V(dc) output voltage, and operating at 20 kHz. The measured efficiency and power factor of the new ZCS-PWM boost preregulator were 96.7% and 0,99, respectively, with an input current total harmonic distortion (THD) equal to 3.42% for an input voltage with THD equal to 1.61%, at rated load, the new ZCS-PWM Zeta preregulator was designed to voltage step-down operation, and the experimental results were obtained from a laboratory prototype rated at 500 W, 220 V(rm), input voltage, 110 V(dc) output voltage, and operating at 50 kHz. The measured efficiency of the new ZCS-PWM Zeta preregulator is approximately 96.9% and the input power factor is 0.98, with an input current THD equal to 19.07% while the input voltage THD is equal to 1.96%, at rated load.

A 2kW interleaved ZCS-FM boost rectifier digitally controlled by FPGA device

This paper presents a 2kW single-phase high power factor boost rectifier with four cells in interleave connection, operating in critical conduction mode, and employing a soft-switching technique, controlled by Field Programmable Gate Array (FPGA). The soft-switching technique Is based on zero-current-switching (ZCS) cells, providing ZC (zero-current) turn-on and ZCZV (zero-current-zero-voltage) turn-off for the active switches, and ZV (zero-voltage) turn-on and ZC (zero-current) turn-off for the boost diodes. The disadvantages related 'to reverse recovery effects of boost diodes operated in continuous conduction mode (additional losses, and electromagnetic interference (EMI) problems) are minimized, due to the operation in critical conduction mode. In addition, due to the Interleaving technique, the rectifer's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) In the input current, in compliance with the TEC61000-3-2 standards. The digital controller has been developed using a hardware description language (VHDL) and implemented using a XC2S200E-SpartanII-E/Xilinx FPGA device, performing a true critical conduction operation mode for four interleaved cells, and a closed-loop to provide the output voltage regulation, like as a pre-regulator rectifier. Experimental results are presented for a 2kW implemented prototype with four interleaved cells, 400V nominal output voltage and 220V(rms) nominal input voltage, in order to verify the feasibility and performance of the proposed digital control through the use of a FPGA device.