29 resultados para SOI MOSFETS
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mum single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm(2). Measured resolution of encoding parameter a is better than 10% at 6 MHz and V-DD = 3.3 V. Idle-mode consumption is 340 LW. Pulses of frequencies up to 15 MHz and alpha = 10% can be discriminated for 2.3 V less than or equal to V-DD less than or equal to 3.3 V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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We comment on the recent results [Phys. Rev. B 70, 235314 (2004)] showing the dispersion relations of single-particle and collective excitations in quantum wires in the presence of the Rashba spin-orbit interaction (SOI). We claim that those calculations performed in the absence of SOI, and used as a strong reference to the interacting case, are unlikely to be correct. We show the correct omega-q plane of the system in the absence of Rashba SOI.
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Dans cet article qui se propose de rendre hommage à Carlos Estevam Martins, chercheur en sciences sociales, on examine le rôle de l'intellectuel dans le monde actuel. on part du présupposé qu'on assiste à une métamorphose, due à la forte tendance à l'hyperspécialisation, qui éloigne les intellectuels du vrai débat sur les idées et l'intérêt civique. Paradoxalement, cette même métamorphose exige la présence active de l'intellectuel en tant que personnage apte à produire du sens et des synthèses, pouvant ainsi aider la communauté politique à trouver des formes plus évoluées de conscience de soi.
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Suivant notre intention générale qui est d'étudier longitudinalement l'utilisation que Merleau-Ponty fait de la notion de schéma corporel dans sa philosophie, nous nous consacrons dans cet article à ses cours à la Sorbonne. Ces cours font partie d'une période intermédiaire de son oeuvre. Le philosophe y amorce des discussions concernant la corporeité à partir de la psychologie de l'enfant et de la psychanalyse, en abordant le problème de l'intersubjectivité et la théorie du schéma corporel. Merleau-Ponty comprend que l'acquisition d'un schéma corporel unitaire, total, implique une décentralisation de soi, de façon que le corps propre, le corps d'autrui et le monde puissent s'entrelacer dans un tissu relationnel qui implique inextricablement visibilité et épaisseur intra-corporel. Nous considérons que dans ces études Merleau-Ponty effectue un grand pas vers la notion de chair telle qu'on la trouve dans ses textes plus tardifs.
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Two-stage isolated converters for photovoltaic (PV) applications commonly employ a high-frequency transformer on the DC-DC side, submitting the DC-AC inverter switches to high voltages and forcing the use of IGBTs instead of low-voltage and low-loss MOSFETs. This paper shows the modeling, control and simulation of a single-phase full-bridge inverter with high-frequency transformer (HFT) that can be used as part of a two-stage converter with transformerless DC-DC side or as a single-stage converter (simple DC-AC inverter) for grid-connected PV applications. The inverter is modeled in order to obtain a small-signal transfer function used to design the PResonant current control regulator. A high-frequency step-up transformer results in reduced voltage switches and better efficiency compared with converters in which the transformer is used on the DC-DC side. Simulations and experimental results with a 200 W prototype are shown. © 2012 IEEE.
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The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Pós-graduação em Aquicultura - FCAV
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Pós-graduação em Serviço Social - FCHS
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)